72708-38-4Relevant academic research and scientific papers
Preparation and properties of ((trimethylsilyl)methyl)gallium(III) compounds
Beachley Jr.,Simmons, Randall G.
, p. 1021 - 1025 (2008/10/08)
A series of neutral organogallium(III) compounds which incorporate the (trimethylsilyl)methyl ligand, Ga(CH2SiMe3)nX3-n (n = 3, 2, 1; X = Cl, Br), have been prepared and fully characterized by elemental analyses, 1H NMR and infrared spectroscopy, molecular weight data, solubility properties, and Lewis acid-base chemistry. The parent compound Ga(CH2SiMe3)3 was prepared from GaCl3 by a standard Grignard reaction in diethyl ether. The halogen derivatives were prepared from Ga(CH2SiMe3)3 by elimination reactions with HCl or HBr and exchange reactions with GaCl3 or GaBr3. The following molecular formulas are supported by all available data: Ga(CH2SiMe3)3, [Ga(CH2SiMe3)2Cl]x, [Ga(CH2SiMe3)2Br]2, [Ga(CH2SiMe3)Cl2]2, and [Ga(CH2SiMe3)Br2]2. It is noteworthy that the (trimethylsilyl)methyl ligand significantly influences the chemistry of only Ga(CH2SiMe3)3 and [Ga(CH2SiMe3)2Cl]x. The Lewis acidity of Ga(CH2SiMe3)3 has been greatly diminished as diethyl ether can be readily removed by simple vacuum distillation. The chemical and physical properties of Ga(CH2SiMe3)2Cl, which could only be prepared in low yield by the elimination reaction, suggest that the compound might have an unusual structure. A ladder polymer or a linear polymer with one bridging chlorine atom per gallium atom is proposed. All other ((trimethylsilyl)methyl)gallium-halogen compounds have properties analogous to those of other known organogallium-halogen compounds.
