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2,6-Bis(4,4,5,5-tetraMethyl-1,3,2-dioxaborolan-2-yl)benzo[1,2-b:4,5-b']dithiophene is a chemical with a specific purpose. Lookchem provides you with multiple data and supplier information of this chemical.

861398-06-3

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861398-06-3 Usage

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Used in Organic Electronics Industry:

Check Digit Verification of cas no

The CAS Registry Mumber 861398-06-3 includes 9 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 6 digits, 8,6,1,3,9 and 8 respectively; the second part has 2 digits, 0 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 861398-06:
(8*8)+(7*6)+(6*1)+(5*3)+(4*9)+(3*8)+(2*0)+(1*6)=193
193 % 10 = 3
So 861398-06-3 is a valid CAS Registry Number.

861398-06-3 Well-known Company Product Price

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  • TCI America

  • (B4158)  2,6-Bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)benzo[1,2-b:4,5-b']dithiophene  >97.0%(GC)

  • 861398-06-3

  • 1g

  • 1,690.00CNY

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861398-06-3Relevant academic research and scientific papers

Synthesis and Transistor Application of Bis[1]benzothieno[6,7- d:6′,7′- d′]benzo[1,2- b:4,5- b′]dithiophenes

Nishinaga, Shuhei,Mori, Hiroki,Nishihara, Yasushi

, p. 5506 - 5515 (2018)

Four bis[1]benzothieno[6,7-d:6′,7′-d′]benzo[1,2-b:4,5-b′]dithiophene (BBTBDT) derivatives bearing substituents on the molecular long axis were synthesized, and their transistor performance was evaluated. Among the obtained compounds, OFET devices based on the 2,9-diphenyl-substituted derivative (1d) on a β-PTS-modified Si/SiO2 substrate yielded the best morphological and crystalline structures, resulting in the highest hole mobility, as high as 0.16 cm2 V-1 s-1, and a low threshold voltage of -8 V. In the solid state, 1d formed a highly ordered and crystalline edge-on structure, which facilitated effective carrier transport. The detailed structure-property relationships were also disclosed by GIWAXS analysis, atomic force microscopy measurements, and theoretical calculations.

Iridium-bipyridine periodic mesoporous organosilica catalyzed direct C-H borylation using a pinacolborane

Maegawa, Yoshifumi,Inagaki, Shinji

supporting information, p. 13007 - 13016 (2016/01/09)

Heterogeneous catalysis for direct C-H borylation of arenes and heteroarenes in the combination of iridium (Ir) complex fixed on periodic mesoporous organosilica containing bipyridine ligands within the framework (Ir-BPy-PMO) and pinacolborane (HBpin) is reported. Ir-BPy-PMO showed higher catalytic activity toward the borylation of benzene with inexpensive HBpin compared to expensive bis(pinacolato)diboron (B2pin2). The precatalyst could be handled without the use of a glove box. The catalyst was easily recovered from reaction mixtures by simple filtration under air. The recovered catalyst still showed good catalytic activity for at least three more times for the borylation of benzene. A variety of arenes and heteroarenes were successfully borylated with high boron efficiency by Ir-BPy-PMO using HBpin, whereas almost no activity was observed for borylation of some heteroarenes with B2pin2. The system using Ir-BPy-PMO and HBpin was also utilized in syntheses of multi-boronated thiophene-based building blocks containing ladder-, acenefused-, and fused-thiophene skeletons. The combination of a stable and reusable solid catalyst and inexpensive HBpin is expected to be superior to conventional approaches for the development of industrial applications.

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