909280-97-3Relevant academic research and scientific papers
Controlling destructive quantum interference in tunneling junctions comprising self-assembled monolayers: Via bond topology and functional groups
Zhang, Yanxi,Ye, Gang,Soni, Saurabh,Qiu, Xinkai,Krijger, Theodorus L.,Jonkman, Harry T.,Carlotti, Marco,Sauter, Eric,Zharnikov, Michael,Chiechi, Ryan C.
, p. 4414 - 4423 (2018)
Quantum interference effects (QI) are of interest in nano-scale devices based on molecular tunneling junctions because they can affect conductance exponentially through minor structural changes. However, their utilization requires the prediction and deterministic control over the position and magnitude of QI features, which remains a significant challenge. In this context, we designed and synthesized three benzodithiophenes based molecular wires; one linearly-conjugated, one cross-conjugated and one cross-conjugated quinone. Using eutectic Ga-In (EGaIn) and CP-AFM, we compared them to a well-known anthraquinone in molecular junctions comprising self-assembled monolayers (SAMs). By combining density functional theory and transition voltage spectroscopy, we show that the presence of an interference feature and its position can be controlled independently by manipulating bond topology and electronegativity. This is the first study to separate these two parameters experimentally, demonstrating that the conductance of a tunneling junction depends on the position and depth of a QI feature, both of which can be controlled synthetically.
Organic electroluminescent material and device (by machine translation)
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Paragraph 0127; 0137-0139; 0173-0176, (2019/07/04)
Discloses an organic electroluminescent materials and devices. The organic electroluminescent material is a benzo-thiophene or its similar structure model compound, can be used as the electroluminescent device in the charge transporting layer, a hole injection layer, a charge generation layer and the like. Compared with the existing material, these novel compounds are capable of providing excellent device performance, such as the further improvement of the voltage of the OLED, the efficiency and/or service life. (by machine translation)
Synthesis and Transistor Application of Bis[1]benzothieno[6,7- d:6′,7′- d′]benzo[1,2- b:4,5- b′]dithiophenes
Nishinaga, Shuhei,Mori, Hiroki,Nishihara, Yasushi
, p. 5506 - 5515 (2018/05/14)
Four bis[1]benzothieno[6,7-d:6′,7′-d′]benzo[1,2-b:4,5-b′]dithiophene (BBTBDT) derivatives bearing substituents on the molecular long axis were synthesized, and their transistor performance was evaluated. Among the obtained compounds, OFET devices based on the 2,9-diphenyl-substituted derivative (1d) on a β-PTS-modified Si/SiO2 substrate yielded the best morphological and crystalline structures, resulting in the highest hole mobility, as high as 0.16 cm2 V-1 s-1, and a low threshold voltage of -8 V. In the solid state, 1d formed a highly ordered and crystalline edge-on structure, which facilitated effective carrier transport. The detailed structure-property relationships were also disclosed by GIWAXS analysis, atomic force microscopy measurements, and theoretical calculations.
Hole transport materials including OLED applications
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, (2015/09/22)
The composition described here comprises at least one hole-transporting compound, wherein the hole-transporting compound comprises a core covalently bonded to at least two arylamine groups, wherein the arylamine group optionally comprises one or more intractability groups. The composition can provide good film formation and stability when coated onto hole injection layers. Solution processing of hole transporting layers of OLEDs can be achieved with the composition described here. Good mobility can be achieved.
