873585-38-7 Usage
Uses
Used in Optoelectronic Devices:
Zn(tta)2(tmeda) is used as a fluorescent material for its optoelectronic properties, making it suitable for applications in the development of optoelectronic devices.
Used in Coordination Chemistry:
In the field of coordination chemistry, Zn(tta)2(tmeda) is used as a coordination complex for studying metal-ligand interactions and the structural properties of such complexes.
Used in Catalysis:
Zn(tta)2(tmeda) is used as a catalyst precursor due to its metal-ligand coordination and reactivity properties, which may offer potential in various catalytic processes.
Used in Material Science:
In material science, Zn(tta)2(tmeda) is used as a component in the synthesis of new materials, leveraging its coordination chemistry properties to create materials with specific characteristics and functionalities.
Check Digit Verification of cas no
The CAS Registry Mumber 873585-38-7 includes 9 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 6 digits, 8,7,3,5,8 and 5 respectively; the second part has 2 digits, 3 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 873585-38:
(8*8)+(7*7)+(6*3)+(5*5)+(4*8)+(3*5)+(2*3)+(1*8)=217
217 % 10 = 7
So 873585-38-7 is a valid CAS Registry Number.
873585-38-7Relevant articles and documents
A novel diamine adduct of zinc bis(2-thenoyl-trifluoroacetonate) as a promising precursor for MOCVD of zinc oxide films
Malandrino, Graziella,Blandino, Manuela,Perdicaro, Laura M. S.,Fragala, Ignazio L.,Rossi, Patrizia,Dapporto, Paolo
, p. 9684 - 9689 (2005)
A novel diamine (N,N,N′,N′-tetramethyletilendiamine) adduct of zinc bis(2-thenoyl-trifluoroacetonate) has been synthesized in a single-step reaction. Single-crystal X-ray diffraction studies of Zn(tta) 2·tmeda provide evidence of a mononuclear structure with a six-coordinated zinc ion. The thermal behavior of this adduct points to mass-transport properties suitable for its application to MOCVD processes. This novel compound has been successfully applied as a precursor for the deposition of ZnO films on (100) Si and quartz substrates. The good quality of the deposited films indicates that the adduct is a very attractive precursor for MOCVD applications.
