883983-92-4

Upstream product

• 3972-65-4 1-bromo-4-tert-butylbenzene 
• 92-84-2 10H-phenothiazine 
• 883983-89-9 C₄₄H₄₀N₂S₂ 
• 883983-86-6 10-(4-(tert-butyl)phenyl)-10H-phenothiazine 

Downstream Products

• 1422969-68-3 10,10'-bis-(4-tert-butyl phenyl)-10H,10-H-[3,3']biphenothiazinyl-7,7'-biphenyl-4-yl-naphthalen-1-yl-amine 

Relevant academic research and scientific papers

Highly efficient new hole injection materials for organic light emitting diodes base on phenothiazine derivatives

New hole injection materials for OLED based on phenothiazine were synthesized, and the electro-optical properties of synthesized materials were examined by through UV-Vis. and photolumines-cence spectroscopy as well as cyclic voltammetry 1-NDD-t-BPBP and 2-NDD-t-BPBP showed Tg of 180 and 177 °C. These are higher than that (110 °C) of 2-TNATA, commercial HIL material. As for the HOMO level of the synthesized materials, 1-NDD-t-BPBP and 2-NDD-t-BPBP were 4.99 and 5.02 eV, indicating well-matched values between HOMO (4.8 eV) of ITO and HOMO (5.4 eV) of NPB, HTL material. In addition, judging from the fact that the synthesized materials both barely showed any absorption in the range of over 450 nm, the synthesized materials could be effectively used as an HIL material. The synthesized materials were used as the HIL in OLED device, yielding luminance efficiencies of 4.51 cd/A (1-NDD-t-BPBP) and 4.44 cd/A (2-NDD-t-BPBP). These results indicated that 1-NDD-t-BPBP shows more excellent luminance efficiency which is about 11% improved over 2-TNATA a commercial HIL material. Copyright

High efficiency new hole injection materials for organic light emitting diodes based on dimeric phenothiazine and phenoxazine moiety derivatives

New hole injection materials for organic light emitting diodes (OLEDs) based on phenothiazine and phenoxazine were synthesized, and the electro-optical properties of synthesized materials were examined by through UV-visible (UV-vis), photoluminescence (PL) spectrum and cyclic voltammetry (CV). 1-BPNA-t-BPBP and 1-BPNA-t-BPBPOX showed Tg of 127 and 200 °C, which are higher than that (110 °C) of 2-TNATA, a commercial hole injection layer (HIL) material. The highest occupied molecular orbital (HOMO) level of the synthesized materials of 1-BPNA-t-BPBP and 1-BPNA-t-BPBPOX were 4.97 and 4.91 eV, indicating values well-matched between HOMO (4.8 eV) of ITO and HOMO (5.4 eV) of NPB, hole transporting layer (HTL) material. As a result of using the synthesized materials in OLED device as HIL, 1-BPNA-t-BPBPOX of 2.43 lm/W was higher than 2-TNATA of 1.98 lm/W and 1-BPNA-t-BPBP of 1.39 lm/W in power efficiency. These results indicated that 1-BPNA-t-BPBPOX shows higher excellent power efficiency which is about 18% improved over 2-TNATA a commercial HIL material. Copyright