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bis(3-(9H-carbazol-9-yl)phenyl)diphenylsilane is a chemical with a specific purpose. Lookchem provides you with multiple data and supplier information of this chemical.

887403-89-6

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887403-89-6 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 887403-89-6 includes 9 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 6 digits, 8,8,7,4,0 and 3 respectively; the second part has 2 digits, 8 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 887403-89:
(8*8)+(7*8)+(6*7)+(5*4)+(4*0)+(3*3)+(2*8)+(1*9)=216
216 % 10 = 6
So 887403-89-6 is a valid CAS Registry Number.

887403-89-6Downstream Products

887403-89-6Relevant academic research and scientific papers

Synthesis, photophysical, and electrochemical properties of wide band gap tetraphenylsilane-carbazole derivatives: Effect of the substitution position and naphthalene side chain

Ho, Kar Wei,Ariffin

, p. 2590 - 2599 (2016/11/18)

Four tetraphenylsilane-carbazole derivatives with wide bandgaps (3.38–3.55 eV) were synthesized. The effects of the substitution position and of the presence of naphthalene groups on the photophysical, electrochemical and thermal properties were investigated. The derivatives exhibited maximum absorption peaks ranging from 293 to 304 nm and maximum emission peaks ranging from 347 to 386 nm. Changing the carbazole substitution position on the tetraphenylsilane did not significantly change the photophysical and electrochemical properties. However, p-substituted compounds exhibited higher glass transition temperatures than m-substituted compounds. Naphthalene groups with bulky structures had extended the conjugation lengths that red-shifted both the absorption and emission spectra. The LUMO level was decreased, which reduced the optical bandgap and triplet energy level. However, the naphthalene groups significantly improved the thermal stability by increasing the glass transition temperature of the compounds.

HOST MATERIALS FOR OLEDS

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Page/Page column 73, (2012/12/13)

Novel aryl silicon and aryl germanium host materials are described. These compounds improve OLED device performance when used as hosts in the emissive layer of the OLED.

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