- MODIFIED ORGANOMETALLIC FRAMEWORK AND CATALYST FOR HYDROGENATION REACTION INCLUDING SAME
-
The present disclosure relates to an organometallic framework modified using a compound having a hydroxyl group (—OH), a catalyst for a hydrogenation reaction including the same, and a method of manufacturing the same. The catalyst according to the present disclosure has high activity to the hydrogenation reaction even at a low temperature of 30 to 40° C., thus making low-grade waste heat usable.
- -
-
-
- METHOD OF PRODUCING AROMATIC HYDROCARBONS FROM BYPRODUCTS OF AROMATIC CARBOXYLIC ACID AND/OR AROMATIC CARBOXYLIC ACID ALKYLESTER PREPARATION PROCESSES
-
This invention relates to a method of producing an aromatic hydrocarbon compound from byproducts of aromatic carboxylic acid and/or aromatic carboxylic acid alkylester preparation processes using hydroprocessing under conditions of high temperature and high hydrogen pressure in the presence of a catalyst, and to a hydroprocessing catalyst used therein.
- -
-
Page/Page column
(2014/07/08)
-
- Dental Posts
-
The present invention pertains to the technical field of dental restorations, especially dental posts. One aspect of the present invention is a radio-opaque coated dental post. The post essentially consists of a core embedded in a thermoplastic or duroplastic material. The core is further coated with yet another resin with at least one radio-opaque additive. X-ray visibility especially at the outer margin of the post is significantly improved.
- -
-
Page/Page column
(2013/03/28)
-
- Synthesis, capping and dispersion of nanocrystals
-
Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.
- -
-
-
- Ruthenium-based catalyst and use thereof in the selective hydrogenation of aromatic or polyunsaturated compounds
-
Catalyst suitable for the hydrogenation of aromatic or polyunsaturated compounds comprising a zirconia carrier (ZrO2), containing ruthenium, as catalyst, and iron oxide (Fe2O3), as promoter, characterized in that at least one metal oxide, selected from those of the groups IB, IIB and IIIA, is present on the carrier as further promoter.
- -
-
-
- DENTAL COMPOSITION AND COMPOSITE RESIN
-
A dental composition of the present invention includes: a polymerizable monomer (A); an amorphous filler (B) having an average particle size of 1 to 20 μm and including silica-based fine particles and coatings of an oxide that cover the surfaces of the silica-based fine particles; and inorganic particles (C) having an average particle of 0.1 to 1.0 μm. The oxide contains a zirconium atom, a silicon atom, and an oxygen atom. It is preferable that the dental composition contain 50 to 400 parts by weight of the filler (B) and 100 to 400 parts by weight of the inorganic particles (C) per 100 parts by weight of the polymerizable monomer (A).
- -
-
-
- Method for Preparing a Colloidal Zirconia Solution
-
A method for preparing a colloidal solution of non-aggregated zirconia particles, comprising the following steps: a) providing a zirconium hydroxide sol, b) adding to said sol an inorganic acid according to an [inorganic acid]/[Zr] molar ratio of 0.5, c) performing the hydrothermal treatment of said sol, and d) recovering the colloidal solution of zirconia particles.
- -
-
-
- METHOD OF FORMING HIGH-K DIELECTRIC FILMS BASED ON NOVEL ZIRCONIUM, AND HAFNIUM PRECURSORS AND THEIR USE FOR SEMICONDUCTOR MANUFACTURING
-
Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): ???????? (M11-aM2a)ObNc,?????(I) wherein 0 ≤ a 1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps: - A step a) of providing a substrate into a reaction chamber; - A step (b) of vaporizing a M1 metal containing precursor selected from: Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, to form a first gas phase metal source; - A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric film comprising a compound of the formula (I) as hereinbefore defined, on said substrate.
- -
-
-
- METHOD OF FORMING DIELECTRIC FILMS, NEW PRECURSORS AND THEIR USE IN SEMICONDUCTOR MANUFACTURING
-
Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): [in-line-formulae](M11-aM2a)ObNc,??(I)[/in-line-formulae] wherein 0≦a1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps: A step a) of providing a substrate into a reaction chamber;A step (b) of vaporizing a M1 metal containing precursor of the formula (II): [in-line-formulae](R1yOp)x(R2tCp)zM1R′4-x-z,??(II)[/in-line-formulae] wherein 0≦x≦3, preferably x=0 or 1, 0≦z≦3, preferably z=1 or 2, 1≦(x+z)≦4, 0≦y≦7, preferably y=2 0≦t≦5, preferably t=1, (R1yOp) represents a pentadienyl ligand, which is either unsubstituted or substituted; (R2tCp) represents a cyclopentadienyl (Cp) ligand, which is either unsubstituted or substituted, to form a first gas phase metal source; A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric film comprising a compound of the formula (I) as hereinbefore defined, on said substrate. Compound the formula (II1): [in-line-formulae](R2tCp)M1[N(R39)(R40)]3??(II1)[/in-line-formulae] corresponding to the formula (II) as hereinabove defined in Claim 1, wherein x=0, z=1 and R′ represents the group N(R39)(R40).
- -
-
-
- Infrared spectra and structures for Group 4 dihydroxide and tetrahydroxide molecules
-
Hafnium and zirconium atoms react with H2O2 molecules and with H2 + O2 mixtures to form M(OH) 2 and M(OH)4 molecules, which are trapped in solid argon and identified from isotopic shifts in
- Wang, Xuefeng,Andrews, Lester
-
p. 10689 - 10701
(2008/10/09)
-
- Zirconium alkoxytris (β-Diketonate), process for manufacturing the same, and liquid composition for formation of PZT film
-
There is provided a compound for the formation of a PZT film using Pb(dpm)2where the compound has a low reactivity with Pb(dpm)2, has a thermal decomposition temperature which is lower than Zr(dpm)4and is well soluble in a solvent such as butyl acetate and toluene. There is also provided a process for the manufacture of the compound. There is further provided a liquid composition for the formation of a PZT film using the compound. The novel compound Zr(OiPr)(dpm)3has a sublimation pressure of 0.1 Torr/160° C. and is able to form a ZrO2film by a CVD at 400° C. That can be prepared by the reaction of 1 mol of Zr(OiPr)4and 3 mol of dpmH in an organic solvent followed by purifying by sublimation. A solution of Pb(dpm)2, Zr(OiPr)(dpm)3and Ti(OiPr)2(dpm)2dissolved in butyl acetate has a long pot life and forms a PZT film by a solution flash CVD method.
- -
-
-
- Preparing amines
-
Amines are prepared by reacting aldehydes or ketones at elevated temperature under elevated pressure with nitrogen compounds selected from the group of ammonia, primary and secondary amines, and with hydrogen in the presence of a catalyst containing copper, wherein the catalytically active mass of the catalyst contains, before the reduction with hydrogen, 20 to 85% by weight of oxygen-containing compounds of zirconium, calculated as ZrO2, 1 to 30% by weight of oxygen-containing compounds of copper, calculated as CuO, 14 to 70% by weight of oxygen-containing compounds of nickel, calculated as NiO, 0 to 5% by weight of oxygen-containing compounds of molybdenum, calculated as MoO3, and 0 to 10% by weight of oxygen-containing compounds of aluminum, calculated as Al2O3.
- -
-
-
- Catalysts containing zirconium oxide
-
Catalyst compositions based on amorphous partially dehydrated zirconium hydroxide which are doped with from 0.01 to 20 atom percent of copper and/or from 0.01 to 20 atom percent of nickel, in each case based on zirconium, and have a specific surface area by the BET method of at least 50 m2/g. The catalyst compositions are suitable, in particular, as the catalyst in hydrogen transfer reactions, such as, the Meerwein-Ponndorf-Verley reduction or the Oppenauer oxidation. The preparation of 3-hydroxyquinuclidine of the formula: involves reaction of quinuclidin-3-one with a secondary alcohol in the presence of the amorphous partially dehydrated zirconium hydroxide.
- -
-
-
- Catalytic system and process for the oxidative dehydrogenation of alkylaromatics or paraffins to the corresponding alkenylaromatics or the corresponding olefins
-
Catalytic system for the oxidative dehydrogenation of alkylaromatics (in particular ethylbenzene) or paraffins to the corresponding alkenylaromatics (in particular styrene) or to the corresponding olefins, consisting of:a vanadium oxide;a bismuth oxide;and a carrier based on magnesium, whereinthe vanadium, expressed as V2O5, is in a quantity ranging from 1 to 15% by weight, preferably from 2 to 10%,the bismuth, expressed as Bi2O3, ranges from 2 to 30% by weight, preferably from 5 to 25% by weight,the complement to 100 being the carrier.
- -
-
-
- Preparation of amines from olefins over oxides of group IVB or VIB or mixtures thereof on carriers
-
Amines of general formula I STR1 where R1, R2, R3, R4, R5 and R6 are each hydrogen, C1 -C20 -alkyl, C2 -C20 -alkenyl, C2 -C20 -alkynyl, C3 -C20 -cycloalkyl, C4 -C20 -alkylcycloalkyl, C4 -C20 -cycloalkylalkyl, aryl, C7 -C20 -alkylaryl or C7 -C20 -aralkyl, R1 and R2 together form a saturated or unsaturated C3 -C9 -alkylene chain and R3 or R5 is C21 -C200 -alkyl or C21 -C200 -alkenyl, or R3 and R5 together form a C2 -C12 -alkylene chain, are prepared by reacting an olefin of the general formula II STR2 where R3, R4, R5 and R6 have the above-mentioned meanings, with ammonia or primary or secondary amines of the general formula III STR3 where R1 and R2 have the abovementioned meanings, at from 200° to 350° C. and from 100 to 300 bar in the presence of a heterogeneous catalyst, by a process in which the heterogeneous catalyst used is an oxide of group IVB or VIB or a mixture thereof on a carrier.
- -
-
-
- Process for preparation of diamines by catalytic amination of aminoalcohols
-
In a process for preparing diamines from aminoalcohols and nitrogen compounds selected from the group consisting of ammonia and primary and secondary amines at from 80° to 250° C. and pressures of from 1 to 400 bar using hydrogen in the presence of a zirconium, copper, nickel catalyst, the catalytically active composition comprises from 20 to 85% by weight of oxygen-containing zirconium compounds, calculated as ZrO2, from 1 to 30% by weight of oxygen-containing compounds of copper, calculated as CuO, from 30 to 70% by weight of oxygen-containing compounds of nickel, calculated as NiO, from 0.1 to 5% by weight of oxygen-containing compounds of molybdenum, calculated as MoO3, and from 0 to 10% by weight of oxygen-containing compounds of aluminum and/or manganese, calculated as Al2 O3 and MnO2 respectively.
- -
-
-
- Preparation of amines
-
A process for the preparatiion of an amine which comprises reacting a primary or secondary alcohol and a nitrogen compound selected from the group consisting of ammonia and primary and secondary amines, at temperatures of from 80° to 250° C. and pressures of from 1 to 400 bar using hydrogen in the presence of a zirconium/copper/nickel catalyst, wherein the catalytically active material contains from 20 to 85 wt % of oxygen-containing zirconium compounds, calculated as ZrO2, from 1 to 30 wt % of oxygen-containing compounds of copper, calculated as CuO, from 30 to 70 wt % of oxygen-containing compounds of nickel, calculated as NiO, from 0.1 to 5 wt % of oxygen-containing compounds of molybdenum, calculated as MoO3 and from 0 to 10 wt % of oxygen-containing compounds of aluminum and/or manganese, calculated as Al2 O3 or MnO2, respectively.
- -
-
-
- Isomerization of paraffins with strong solid acid catalyst and adamantane
-
A process for isomerizing a paraffin feed comprising contacting the feed with a strong, solid acid catalyst comprising a sulfated Group IVB metal oxide and at least one Group VIII metal in the presence of hydrogen and an adamantane compound.
- -
-
-
- F-T process using an iron on mixed zirconia-titania supported catalyst
-
A Fischer-Tropsch catalyst comprising iron co-deposited with or deposited on particles comprising a mixture of zirconia and titania, preferably formed by co-precipitation of compounds convertible to zirconia and titania, such as zirconium and titanium alkoxide. The invention also comprises the method of making this catalyst and an improved Fischer-Tropsch reaction process in which the catalyst is utilized.
- -
-
-
