Detail of > 1333-74-0
- MSDS Download

- CAS Number:
- 1333-74-0
- Name:
Hydrogen
- Formula:
- H2
- Molecular Structure:

- Synonyms:
- Dihydrogen;Hydrogen (H2);Hydrogen molecule;Mol. hydrogen;Molecular hydrogen;Orthohydrogen;Parahydrogen;Protium;
- Molecular Weight:
- 2.02
- EINECS:
- 215-605-7
- Density:
- 0.0899 g/cm3
- Melting Point:
- -259.2 °C(lit.)
- Boiling Point:
- -252.8 °C(lit.)
- Solubility:
- 0.00017 g/100 mL in water
- Appearance:
- Colorless gas
- Hazard Symbols:
F+- Risk Codes:
- 12
- Safety:
- 9-16-33Details
- Transport Information:
- UN 1950 2.1
- Method:
- By scrubbing with various solutions (see especially the Girbitol absorption process). For very pure hydrogen, by diffusion through palladium.
- Occurrence:
- Chiefly in combined form (water, hydrocarbons, and other organic compounds), traces in earth's atmosphere. Unlimited quantities in sun and stars. It is the most abundant element in the universe.
- Deleted CAS:
- 725200-57-7
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Reference
- Hydrogen fuel cells
- Hydrogen fuel cells. (Matsushita Electric Industrial Co., Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 58121566 A2 19 Jul 1983 Showa, 3 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: H01M008-06. APPLICATION: JP 82-4590 13 Jan 1982. DOCUMENT TYPE: Patent CA Section: 52 (Electrochemical, Radiational, and Thermal Energy Technology) H fuel cells have a concentric H storage unit with an inner and an outer compartments to operate absorption-desorption cycle in an alternate manner to use the exothermic and endothermic effects in H delivery and storage. Thus, a stacked H-O fuel used an inner concentric H storage unit filled with Ti-Mn1.5. The cell output was 0.7 ± 0.02 V in 5000-h operation and the fuel cell start-up time was £0.5 h.
- Compensated amorphous silicon solar cell
- Compensated amorphous silicon solar cell. Devaud, Genevieve (USA ). U.S. US 4409424 A 11 Oct 1983,6 pp. (English). (United States of America). CODEN: USXXAM. CLASS: IC: H01L031-06. NCL: 136258000.Chemicals with cas numbers 7637-07-2 and 1333-74-0 also play role. APPLICATION: US 82-390730 21 Jun 1982. DOCUMENT TYPE: Patent CA Section: 52 (Electrochemical, Radiational, and Thermal Energy Technology) An amorphous Si solar cell includes an elec. conductive substrate, a layer of glow-discharge deposited hydrogenated amorphous Si (a-Si:H) over the substrate, and regions of differing cond. with 31 region of i-a-Si:H. The layer of a-Si:H has opposed 1st and 2nd major surfaces where the 1st surface contacts the elec. conductive substrate and an electrode for elec. contacting the 2nd major surface. The i-a-Si:H region is deposited in a glow discharge with an atm. which includes e0.02 at.% monoat. B. An improved n-i-p solar cell is disclosed using a BF3-doped i layer. Thus, the resp. efficiency, fill factor, open-circuit voltage, and short-circuit c.d. for a n-i-p cell (area = 0.062 cm2) with a BF3-doped i layer were 3.02%, 0.565, 0.804 V, and 6.64 mA/cm2 vs. 2.10%, 0.425, 0.701 V, and 7.03 mA/cm2 for a p-i-n solar cell (area = 0.066 cm2) using an undoped i layer. .
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