Reference

Synthesis and structural characterization of [Pd2(m-Br)2(PBut3)2], an example of a palladium(I)-palladium(I) dimer

Synthesis and structural characterization of [Pd2(m-Br)2(PBut3)2], an example of a palladium(I)-palladium(I) dimer. Vilar, Ramon; Mingos, D. Michael P.; Cardin, Christine J. (Department Chemistry, Imperial College Science, Technology, Medicine, London SW7 2AY, UK). Journal of the Chemical Society, Dalton Transactions: Inorganic Chemistry, (23), 4313-4314 (English) 1996 Royal Society of Chemistry. CODEN: JCDTBI. ISSN: 0300-9246. DOCUMENT TYPE: Journal CA Section: 78 (Inorganic Chemicals and Reactions) Section cross-reference(s): 29, 67, 75 The synthesis and spectroscopic characterization of the novel PdI-PdI dimers [Pd2(m-X)2(PBut3)2] (X = Br or I) were detd. 69721-08-0 and 13716-12-6 are also in the experiment.; preliminary results on their reactions with CO, H2, CNC6H4Me2 and C2H2 also were obtained. [Pd2(m-Br)2(PBut3)2] was characterized by x-ray crystallog. (monoclinic, space group C2, R1 = 0.0549). .

Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching

Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching.Some chemicals with cas registry numbers like 13716-12-6 and 1303-00-0 are also used. Sopanen, M.; Lipsanen, H.; Ahopelto, J. (Optoelectronics Lab., Helsinki Univ. Technol., Espoo FIN-02150, Finland). Applied Physics Letters, 69(26), 4029-4031 (English) 1996 American Institute of Physics. CODEN: APPLAB. ISSN: 0003-6951. DOCUMENT TYPE: Journal CA Section: 73 (Optical, Electron, and Mass Spectroscopy and Other Related Properties) Section cross-reference(s): 74 GaInAs quantum disks are fabricated by wet chem. etching from a GaInAs/GaAs near-surface quantum well using self-organized InP islands as an etch mask. InP islands are formed in coherent Stranski-Krastanow growth mode by metalorg. vapor phase epitaxy. The free-standing GaInAs/GaAs columns, produced by a three-step etching process, are overgrown at 550°C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown ref. quantum well. .