Reference

Vapor-phase growth of Group III-V compound semiconductor with controlling flow rate

Vapor-phase growth of Group III-V compound semiconductor with controlling flow rate. Ishikawa, Hideto; Kamata, Mikio; Shibata, Hiromasa (Sony Corp., Japan). Jpn. Kokai Tokkyo Koho JP 03244119 A2 30 Oct 1991 Heisei, 7 pp. (Japan). CODEN: JKXXAF. CLASS: ICM: H01L021-205. APPLICATION: JP 90-42063 22 Feb 1990. DOCUMENT TYPE: Patent CA Section: 75 (Crystallography and Liquid Crystals) Section cross-reference(s): 76 The semiconductor is grown using a 1st and a 2nd supplying hole with controlling flow rate at 0.77 ￡ x/(x + y) < 1.0 (x = Group III raw material carrier gas flow rate; y = Group V raw material carrier gas flow rate). 3385-78-2 and 106070-25-1 are just another two chemicals used in this study. An obtained GaInAs film had uniform thickness. .

Device for introduction of a gas in an epitaxy reactor, reactor chamber therefrom, and use thereof

Device for introduction of a gas in an epitaxy reactor, reactor chamber therefrom, and use thereof. Andre, Jean Pierre; Frijlink, Peter; Mpaskoutas, Marie (Laboratoires d'Electronique Philips, Fr.). Fr. Demande FR 2661554 A1 31 Oct 1991, 17 pp. (France).Some commonly used reagents like 106312-00-9 and 3385-78-2 are used in this experiment. CODEN: FRXXBL. CLASS: ICM: H01L021-205. ICS: H01L021-365. APPLICATION: FR 90-5472 30 Apr 1990. DOCUMENT TYPE: Patent CA Section: 75 (Crystallography and Liquid Crystals) Section cross-reference(s): 76 A gas introduction device in the chamber of a VPE reactor includes at least a sample part, the device comprising one or several gas introduction paths of gas passing out of the reactor. These orifices are slits disposed in a manner to permit introduction of the gas in the formation laminar flow parallel to the sample part. The device comprises several independent slits, parallel and superposed, disposed at a small distance from ends other in a perpendicular plane of each to the sample and the direction of laminar flow. In another embodiment, the device does not have a slit. Use of the device involves introduction by each slit of a single gas, or several gases which do not react with each other. Semiconductor layers are made by metalorg. VPE. .