1115-99-7

Basic information

• Product Name: TRIETHYLGALLIUM
• Synonyms: triethyl-galliu;GALLIUM TRIETHYL;TRIETHYLGALLIUM;Triethylgalliumcolorlessliq;Triethylgalliumelecgrcolorlessliq;Triethylgallium,elec.gr.(99.9999%-Ga)PURATREM;Triethylgallium,min.97%;Triethylgallium, min. 97%
• CAS NO: 1115-99-7
• Molecular Formula: C₆H₁₅Ga
• Molecular Weight: 156.91
• EINECS: 214-232-7
• Product Categories: metal alkyl
• Mol File: 1115-99-7.mol
• Article Data: 18

Chemical Properties

• Melting Point: -82,3°C
• Boiling Point: 143°C
• Flash Point: -18°C
• Appearance: colorless/liquid
• Density: 1,058 g/cm3
• Sensitive: moisture sensitive
• CAS DataBase Reference: TRIETHYLGALLIUM(CAS DataBase Reference)
• NIST Chemistry Reference: TRIETHYLGALLIUM(1115-99-7)
• EPA Substance Registry System: TRIETHYLGALLIUM(1115-99-7)

Safety Data

• Hazard Codes: F,C
• Statements: 14/15-17-34
• Safety Statements: 16-36/37/39-43-45-36/37-26-8
• RIDADR: 3203
• WGK Germany: 3
• HazardClass: 4.2
• PackingGroup: I
• Hazardous Substances Data: 1115-99-7(Hazardous Substances Data)

Usage

Safety Profile

Ignites spontaneously in air.Explodes in water or nitric acid.

InChI:InChI=1/3C2H5.Ga/c3*1-2;/h3*1H2,2H3;/rC6H15Ga/c1-4-7(5-2)6-3/h4-6H2,1-3H3

Synthetic route

(CH2)3(P(C6H5)2Ga(C2H5)3)2 → triethyl gallium (1115-99-7)

Conditions	Yield
In neat (no solvent) metal complex decomposed at 120-143°C for 2-3 h;	93%

gallium(III) trichloride + triethylaluminum (97-93-8) → triethyl gallium (1115-99-7)

Conditions	Yield
Stage #1: triethylaluminum With tri-n-propylamine at 20℃; Stage #2: gallium(III) trichloride at 100℃; for 2h; Neat (no solvent);	92%
In hexane at 70℃; Glovebox; Inert atmosphere;

(CH2)5(P(C6H5)2Ga(C2H5)3)2 → triethyl gallium (1115-99-7)

Conditions	Yield
In neat (no solvent) metal complex decomposed at 120-143°C for 2-3 h;	92%

(triphenylphosphine)triethylgallium → triethyl gallium (1115-99-7)

Conditions	Yield
In neat (no solvent) metal complex decomposed at 120-125°C for 2-3 h;	90%

gallium(III) trichloride + sesquiethylaluminum chloride dimer → triethyl gallium (1115-99-7) + diethylgallium chloride (30914-08-0)

Conditions	Yield
With potassium chloride; sodium chloride at 120 - 130℃; under 225.023 Torr; Pressure; Concentration; Temperature; Inert atmosphere;	A 75.9% B n/a
With potassium chloride; sodium chloride at 120℃; under 225.023 Torr; Inert atmosphere;	A 75.9% B 19%

(Et3Ga)2*diphos → triethyl gallium (1115-99-7)

Conditions	Yield
In neat (no solvent) heated slowly under 1E-2 mmHg in a trap-to-trap distillation apparatus (receiver flask at -196 °C), liberation of Et3Ga started at 80 °C, the rate was more satisfactory at 120-125 °C;;	66%

gallium (7440-55-3) + magnesium (7439-95-4) + ethyl iodide (75-03-6) → triethyl gallium (1115-99-7) + magnesium chloride (7786-30-3)

Conditions	Yield
In hexane inert condition; addn. of hexane to mixt. of Mg and Ga (vac.), addn. of hexane, dropwise addn. of EtI (boiling hexane); distillation;	A 65% B n/a

gallium (7440-55-3) + iodine (7553-56-2) + magnesium (7439-95-4) + ethyl iodide (75-03-6) → triethyl gallium (1115-99-7) + magnesium chloride (7786-30-3)

Conditions	Yield
In neat (no solvent) inert condition; addn. of I2 to mixt. of Mg and Ga, heating in vac. (150°C), chilling, addn. of EtI (50 - 70°C, 1 h), heating (90 °C, 4 h); distillation;	A 61% B n/a

Ga(35),Mg(65) (X%) + iodine (7553-56-2) + ethyl iodide (75-03-6) → triethyl gallium (1115-99-7) + magnesium chloride (7786-30-3)

Conditions	Yield
In neat (no solvent) inert condition; addn. of I2 to alloy Mg-Ga, heating in vac. (150 °C), chilling, addn. of EtI), heating (85°C, 4 h); distillation;	A 57% B n/a

Ga(35),Mg(65) (X%) + ethyl iodide (75-03-6) → triethyl gallium (1115-99-7)

Conditions	Yield
With iodine; magnesium In neat (no solvent) byproducts: MgI2; inert atm.; heating (85°C); distn.;	57%

1,3,5-tris(3,3-dimethyl-1-butynyl)benzene (851961-39-2) + diethylgallium hydride (93481-56-2) → (C2H5)3Ga3(C6H3(CCHC(CH3)3)3)2 + triethyl gallium (1115-99-7)

Conditions	Yield
In hexane under Ar; soln. of Et2GaH in n-hexane added to soln. of C6H3(C2CMe3)3 inn-hexane at room temp.; heated under reflux for 16 h; filtered; filtrate concd. under vac. at room temp.; ppt. collected;	A 44% B n/a

triethylaluminum (97-93-8) → triethyl gallium (1115-99-7)

Conditions	Yield
With gallium(III) trichloride; sodium chloride

diethylmercury (627-44-1) → triethyl gallium (1115-99-7)

Conditions	Yield
With gallium at 165℃;

diethylmercury (627-44-1) + gallium + nitrogen → triethyl gallium (1115-99-7)

Conditions	Yield
at 165℃;

triethyl borane (97-94-9) → triethyl gallium (1115-99-7)

Conditions	Yield
With gallium(III) trichloride at 50 - 100℃; for 1 - 3h; Heating / reflux;

gallium (7440-55-3) + ethyl iodide (75-03-6) → triethyl gallium (1115-99-7)

Conditions	Yield
With iodine; magnesium In hexane byproducts: MgI2; inert atm.; boiling; distn.;
With magnesium In neat (no solvent) byproducts: MgI2; inert atm.; heating (90°C, 4 h); distn.;

gallium (7440-55-3) + diethylmercury (627-44-1) → triethyl gallium (1115-99-7)

Et2Ga(NH[C6H2(2,4,6-t-Bu)3]) (230310-74-4) → (EtGaNH[C6H2(4,6-t-Bu)2CMe2CH2-2])2 + triethyl gallium (1115-99-7)

Conditions	Yield
In neat (no solvent) byproducts: H2N[C6H2(t-Bu)3]; Ar-atmosphere; heating at 65°C for 12 h; distillation off of GaEt3 (vac., room temp.), sublimation off of amine, recrystn. (pentane); elem. anal.;

ethyl bromide (74-96-4) + Gallium trichloride (13450-90-3) → triethyl gallium (1115-99-7)

Conditions	Yield
With Mg In diethyl ether (N2), EtBr added dropwise to mixt. of Mg and abs.Et2O, boiled under stirring for 2 h, treated dropwise with GaCl3 in Et2O, boiled under stirringfor 1 h; evapd. at 45°C, condensed into liquid N2, separated (refluxer), recruficated;

(C6H3-2,6-(C6H2-2,4,6-(CH3)3)2)2Sn(Et)GaEt2 → Sn(C6H3-2,6-(C6H2-2,4,6-(CH3)3)2)2 (188685-27-0) + triethyl gallium (1115-99-7)

Conditions	Yield
In toluene at 20℃;

ethylmagnesium iodide (10467-10-4) + gallium(III) iodide → triethyl gallium (1115-99-7)

Conditions	Yield
In diethyl ether

ethyl bromide (74-96-4) + gallium(III) fluoride → triethyl gallium (1115-99-7)

Conditions	Yield
Stage #1: ethyl bromide With magnesium Stage #2: gallium(III) fluoride In diethyl ether for 48h; Reflux;

triisopropylbismuthine (85824-61-9) + triethyl gallium (1115-99-7) → ((CH3)2CH)3BiGa(C2H5)3

Conditions	Yield
In neat (no solvent) all manipulations under N2 atm.; mixed equimolar amts. of Ga and Bi compds. at ambient temp.; elem. anal.;	100%

triethyl gallium (1115-99-7) + tetraethyldistibine (4669-92-5) → [Et4Sb2][GaEt3]2

Conditions	Yield
In neat (no solvent) under N2 atm. react. Et3Ga and Et4Sb2; elem. anal.;	100%

all-cis-1,3,5-triethynyl-1,3,5-trimethyl-1,3,5-trisilacyclohexane + triethyl gallium (1115-99-7) → 1,3,5-tris(diethylgallanylethynyl)-1,3,5-trimethyl-1,3,5-trisilacyclohexane

Conditions	Yield
In neat (no solvent) at 20℃; for 24h; Temperature; Schlenk technique; Inert atmosphere;	100%

tris[(ethynyl)dimethylsilyl](trimethylsilyl)methane + triethyl gallium (1115-99-7) → tris[(diethylgallanylethynyl)dimethylsilyl](trimethylsilyl)methane

Conditions	Yield
In neat (no solvent) at 20℃; for 24h;	100%

bis(1,5-cyclooctadiene)nickel (0) (1295-35-8) + triethylaluminum (97-93-8) + triethyl gallium (1115-99-7) → NiAl#dotGa

Conditions	Yield
With hydrogen In toluene High Pressure; a solns. mixed under inert atm., stirred at 130°C for 16 h under H2 pressure (5 MPa), solvent removed, ppt. dried (high vac.), hydrogenated for 24 h at 390°C; elem. anal.;	99.7%

Gallium trichloride (13450-90-3) + triethyl gallium (1115-99-7) → diethylgallium chloride (30914-08-0)

Conditions	Yield
In pentane Ar-atmosphere; GaEt3:GaCl3 2:1 molar ratio; evapn. (0°C), distillation (60°C, ;	99%
2/1 comproportionation of Et3Ga and CaCl3;

aluminum ethoxide (555-75-9) + triethyl gallium (1115-99-7) + toluene (108-88-3) → [Al((μ-OEt)2GaEt2)3]

Conditions	Yield
In toluene inert atmosphere; GaEt3 addn. to susp. of Al-ethoxide (3:2 molar ratio);reflux (4 h); cooling; filtration; filtrate evapn. (vac.); elem. anal.;	98%

triethyl gallium (1115-99-7) + (2-pyridylmethyl)(tert-butyldimethylsilyl)amine (338963-61-4) → [(2-pyridylmethyl)(tert-butyldimethylsilyl)amino]triethylgallane

Conditions	Yield
In toluene All manipulations under Ar atm.; soln. of org. compd. added dropwise at 0°C to soln. of GaEt3, stirred at room temp. for 12 h; solvent removed. at room temp. in vac.; elem. anal.;	98%

[(calix[4]arene monomethyl ether)nitridomolybdenum(VI)]-diethyl ether (1:1.5) + triethyl gallium (1115-99-7) → [(calix[4]arene monomethyl ether)(triethyl(nitrido)gallium(III))molybdenum(VI)] (869318-27-4)

Conditions	Yield
In toluene N2, a soln. of Ga compd. (0.52 equiv.) slowly added to a soln. of Mo compd. (0.52 equiv.) at room temp., stirred for 1 h; solvent removed (vac.); elem. anal.;	98%

1,3-bis-(dimethylamino)propan-2-ol (5966-51-8) + triethyl gallium (1115-99-7) → [(C2H5)2Ga(OCH(CH2N(CH3)2)2)]2 (811786-06-8)

Conditions	Yield
In dichloromethane (N2); using Schlenk techniques; addn. dropwise of HOCH(CH2NMe2)2 (1 equiv.) to soln. of Et3Ga (1 equiv.) in CH2Cl2 at -78°C with stirringfor 0.5 h; slow warming to room temp., stirring for 5 h; removal of solvent in vac., redissolving in toluene and cooling to -20°C; crystn. for 2 days; elem. anal.;	98%
In hexane (N2); using Schlenk techniques; treatment of HOCH(CH2NMe2)2 (1 equiv.) with Et3Ga (1 equiv.) in hexane at room temp.;

Gallium trichloride (13450-90-3) + triethyl gallium (1115-99-7) → ethylgallium dichloride (6917-79-9)

Conditions	Yield
In pentane Ar-atmosphere; GaEt3:GaCl3 1:2 molar ratio; sublimation (room temp.); elem. anal.;	97.3%

1-Methoxy-2-methylpropan-2-ol (3587-64-2) + triethyl gallium (1115-99-7) → ((C2H5)2Ga(OC(CH3)2CH2OCH3))2 (811786-09-1)

Conditions	Yield
In toluene byproducts: ethane; under N2; ligand added dropwise to soln. of Et3Ga (molar ratio 1:1) in toluene at -78°C with stirring over 0.5 h; warmed slowly to room temp.; stirred for 24 h; solvent removed in vac.; redissolved in toluene; cooled to -20°C;crystd. for several d; elem. anal.;	96%

triethyl gallium (1115-99-7) + 1-heptynyllithium (42017-07-2) → lithium triethylheptynylgallate (80359-11-1)

Conditions	Yield
In benzene Ar; heated at 60°C; solvent removed (vac., 1 Torr, 50°C); elem. anal.;	95%
In neat (no solvent) Ar; heated at 50°C; elem. anal.;

N,N'-bis(o-hydroxybenzyl)-1,2-diamino-(4,5-dimethyl)benzene (163122-31-4) + triethyl gallium (1115-99-7) → ((OC6H4CH2N)2C6H2(CH3)2)Ga(C2H5)(Ga(C2H5)2)2 (166542-84-3)

Conditions	Yield
In toluene byproducts: CH4; stirring (25°C, 15 min), refluxing (8 h); evapn. (vac.); elem. anal.;	95%

triethyl gallium (1115-99-7) + N,N′-bis(3,5-di-t-butylsalicylidene)-ethylenediamine → Ga2(C2H5)4((CH2NCHC6H2(C(CH3)3)2O)2) (207676-24-2)

Conditions	Yield
In toluene stirring (room temp., 24 h); evapn., recrystn. (toluene, -30°C);	95%

1-methyl-2-N,N-dimethylaminoethanol (108-16-7) + triethyl gallium (1115-99-7) → [(C2H5)2Ga(OCH(CH3)CH2N(CH3)2)]2 (811786-08-0)

Conditions	Yield
In dichloromethane (N2); using Schlenk techniques; addn. dropwise of HOCH(CH3)CH2NMe2 (1 equiv.) to soln. of Et3Ga (1 equiv.) in CH2Cl2 at -78°C with stirring for 0.5 h; slow warming to room temp., stirring for 5 h; removal of solvent in vac., redissolving in toluene and cooling to -20°C; as solid; elem. anal.;	95%
In hexane (N2); using Schlenk techniques; treatment of HOCH(CH3)CH2NMe2 (1 equiv.)with Et3Ga (1 equiv.) in hexane at room temp.;

2-(N,N-dimethylamino)ethanol (108-01-0) + triethyl gallium (1115-99-7) → ((C2H5)2Ga(OCH2CH2N(CH3)2))2 (552851-83-9)

Conditions	Yield
In toluene byproducts: ethane; under N2; ligand added dropwise to soln. of Et3Ga (molar ratio 1:1) in toluene at -78°C with stirring over 0.5 h; warmed slowly to room temp.; stirred for 24 h; solvent removed in vac.; crystd. by standing at room temp. for several d; elem. anal.;	95%

1,1,1,5,5,5-hexafluoroacetylacetone (1522-22-1) + triethyl gallium (1115-99-7) → Et2Ga(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato) (203209-46-5)

Conditions	Yield
In pentane byproducts: CH4; Ar-atmosphere; stirring (-196°C to room temp., room temp., 12 h); distg. (vac., -20°C), fractional distg.; elem. anal.;	94.9%

tris(trimethylsilyl)bismuthane (81183-20-2) + triethyl gallium (1115-99-7) → (C2H5)3GaBi(Si(CH3)3)3

Conditions	Yield
In neat (no solvent) all manipulations under N2 atm.; mixed equimolar amts. of Ga and Bi compds. at ambient temp.; dissolved in pentane and storred at -30°C., elem. anal.;	94%

triethyl gallium (1115-99-7) + (Di-iso-propylsilandiyl)diphosphan (89332-24-1) → [[CH(CH3)2]2Si(PHGa(C2H5)2)2]2

Conditions	Yield
In n-heptane byproducts: ethane; (N2), metal complex added to a stirred soln. of ligand in heptane, reacted for 20 min; warmed, crystd. for 3 days at 6°C, elem. anal.;	94%

triethyl gallium (1115-99-7) + (2-pyridylmethyl)(tert-butyldimethylsilyl)amine (338963-61-4) → [(2-pyridylmethyl)di(tert-butylsilyl)amido]diethylgallane

Conditions	Yield
In neat (no solvent) byproducts: C2H6; All manipulations under Ar atm.; mixt. of org. compd. and GaEt3 heated at 120°C for 20 h; volatiles removed in vac.; elem. anal.;	94%

(2-pyridylmethyl)di(tert-butylsilyl)amine (852471-37-5) + triethyl gallium (1115-99-7) → [(2-pyridylmethyl)di(tert-butylsilyl)amino]triethylgallane

Conditions	Yield
In tetrahydrofuran All manipulations under Ar atm.; GaEt3 added dropwise at 0°C to soln. of org. compd., stirred at room temp. for 12 h; solvent removed at room temp. in vac.; elem. anal.;	94%

[Li(thf)Sn(2-C5H3N-5-Me)3] + triethyl gallium (1115-99-7) → [{LiSn(2-C5H3N-5-Me)3}GaEt3]n

Conditions	Yield
In toluene at 20℃; Inert atmosphere;	94%

[LiPb(2-py6OtBu)3] + triethyl gallium (1115-99-7) → [LiGaEt2(2-py6OtBu)2]2

Conditions	Yield
In toluene at 20℃; Schlenk technique; Inert atmosphere;	94%

[Ga(C5H4CH3)3] + triethyl gallium (1115-99-7) → [(C2H5)2Ga(C5H4CH3)]

Conditions	Yield
In pentane (Ar); standard vac. line technique; soln. of GaEt3 and Ga(C5H4Me)3 in pentane stirred overnight at room temp.; pentane was removed by vac. distn.; residue was vac. distd.; elem. anal.;	93.1%

N,N'-bis(2-hydroxybenzyl)ethylenediamine (18653-98-0) + triethyl gallium (1115-99-7) → ((OC6H4CH2NCH2)2)Ga(C2H5)(Ga(C2H5)2)2

Conditions	Yield
In toluene byproducts: CH4; stirring (25°C, 15 min), refluxing (8 h); evapn. (vac.); elem. anal.;	93%

N,N'-bis(2-hydroxybenzyl)-1,3-diaminopropane (2287-28-7) + triethyl gallium (1115-99-7) → ((OC6H4CH2NCH2)2CH2)Ga(C2H5)(Ga(C2H5)2)2 (166542-82-1)

Conditions	Yield
In toluene byproducts: CH4; stirring (25°C, 15 min), refluxing (8 h); evapn. (vac.); elem. anal.;	93%

triethyl gallium (1115-99-7) + (2-pyridylmethyl)(tert-butyldimethylsilyl)amine (338963-61-4) → [(2-pyridylmethyl)(tert-butyldimethylsilyl)amido]diethylgallane

Conditions	Yield
In toluene byproducts: C2H6; All manipulations under Ar atm.; mixt. of org. compd. and GaEt3 in toluene refluxed for 20 h; volatiles removed at room temp. in vac.; elem. anal.;	93%

2-methoxy-ethanol (109-86-4) + triethyl gallium (1115-99-7) → [(C2H5)2Ga(OCH2CH2OCH3)]2 (811786-07-9)

Conditions	Yield
In dichloromethane (N2); using Schlenk techniques; addn. dropwise of HOCH2CH2OMe (1 equiv.)to soln. of Et3Ga (1 equiv.) in CH2Cl2 at -78°C with stirring fo r 0.5 h; slow warming to room temp., stirring for 5 h; removal of solvent in vac., redissolving in toluene and cooling to -20°C; as oil;	93%
In hexane (N2); using Schlenk techniques; treatment of HOCH2CH2OMe (1 equiv.) withEt3Ga (1 equiv.) in hexane at room temp.; as oil;

Upstream product

• 7440-55-3 gallium 
• 627-44-1 diethylmercury 
• 74-96-4 ethyl bromide 
• 10467-10-4 ethylmagnesium iodide 
• 13450-90-3 Gallium trichloride 
• 97-93-8 triethylaluminum 
• 851961-39-2 1,3,5-tris(3,3-dimethyl-1-butynyl)benzene 
• 93481-56-2 diethylgallium hydride 
• 230310-74-4 Et₂Ga(NH[C₆H₂(2,4,6-t-Bu)3]) 
• 75-03-6 ethyl iodide 
• 7439-95-4 magnesium 
• 7553-56-2 iodine 
• 97-94-9 triethyl borane 

Downstream Products

• 230310-74-4 Et₂Ga(NH[C₆H₂(2,4,6-t-Bu)3]) 
• 207676-23-1 Ga(CH₂(CH₂NCHC₆H₂(C(CH₃)3)2O)2H)(C₂H₅)2 
• 1231184-58-9 1,4-bis(diethylgallyl)benzene 
• 1231184-57-8 1,3-bis(diethylgallyl)benzene 
• 30914-08-0 diethylgallium chloride 
• 93-55-0 1-phenyl-propan-1-one 
• 7338-94-5 1,3-diphenyl-2-propynone 
• 1445-79-0 trimethyl gallium 

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Growth of GaNAlN and AlGaN by MOCVD using TRIETHYLGALLIUM (cas 1115-99-7) and tritertiarybutylaluminium08/22/2019

Films of aluminium nitride (AIN) with thicknesses in the range from 200 to 3600 Å have been deposited at 1050°C by low-pressure MOCVD. Using an alternative precursor, tritertiarybutylaluminium (tBu3Al), and ammonia (NH3), we have grown AlN on sapphire (c-Al2O3). At a growth rate of 0.35 μm/h, ...detailed

Classical semiconductorGrowth of GaNAlN by low-pressure MOCVD using TRIETHYLGALLIUM (cas 1115-99-7) and tritertbutylaluminium08/21/2019

Films of aluminum nitride (AlN) with thicknesses in the range from 200 to 3600 Å have been deposited at 1050°C by low-pressure MOCVD. Using an alternative precursor, tritertbutylaluminium (But3Al), and ammonia (NH3), we have grown AlN on sapphire (c-Al2O3). At a growth rate of 0.35 μm/h, the F...detailed

The thermal decomposition of TRIETHYLGALLIUM (cas 1115-99-7) on GaAs(100)08/19/2019

The adsorption and thermal decomposition of triethylgallium (TEG) on GaAs has been studied using thermal desorption and XPS techniques. Pure Ga films are deposited when adsorbed TEG layers on GaAs are heated in a reaction which competes with TEG and diethylgallium (DEG) desorption. Ethene, ethen...detailed

Mass spectroscopic study of photolytic decomposition of TRIETHYLGALLIUM (cas 1115-99-7) and arsine08/18/2019

Mass spectrometry has been utilized to study the photolytic decomposition of triethylgallium and arsine leading to the deposition of GaAs thin films. A Hg-Xe arc lamp is utilized as the light source. We find that the products of photodissociation are essentially the same as those found previousl...detailed

Comparison studies of InGaN epitaxy with trimethylgallium and TRIETHYLGALLIUM (cas 1115-99-7) for photosensors application08/17/2019

InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN ...detailed

Ligand lability of TRIETHYLGALLIUM (cas 1115-99-7) on GaAs(100)08/16/2019

We report direct evidence for dissociative adsorption and recombinative desorption of triethylgallium on GaAs(100). Deuterated and undeuterated triethylgallium were used to investigate two distinct ethyl species produced by chemisorption of triethylgallium on GaAs(100): ethyl ligands bound to th...detailed

Fabrication of m-axial InGaN nanocolumn arrays on silicon substrates using TRIETHYLGALLIUM (cas 1115-99-7) precursor chemical vapor deposition approach08/13/2019

We demonstrated the catalytic growth of m-axial InxGa1−xN (0.10 ≤ x ≤ 0.17) nanocolumn arrays with high crystallinity on silicon substrates using metal–organic chemical vapor deposition with trimethylindium (TMIn), triethylgallium (TEGa), and ammonia as precursors. The high quality of InGaN n...detailed

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Preparation of organogallium compounds from organolithium reagents and gallium chloride. Infrared, magnetic resonance, and mass spectral studies of alkylgallium compounds

Conditions for the preparation of a series of base-free trialkylgallium compounds in benzene solvent by the exchange reaction of alkyllithium compounds and gallium chloride are described. Optimum conditions which favor formation of the trialkyl involve mixing a benzene solution of an appropriate alkyllithium compound and a benzene solution of gallium chloride in exactly a 3:1 molar ratio, heating of the reaction mixture for 12 hr at 70°, filtration to remove by-product lithium chloride, removal of solvent under vacuum, and vacuum distillation of the product: 3RLi + GaCl3 = 3LiCl + R3Ga, where R = C2H5, n-C3H7, n-C4H9, i-C4H9, s-C4H9, and t-C4H9. Alkylgallium dichlorides and dialkylgallium chlorides are produced when lithium alkyls and gallium chloride are allowed to react in a 1:1 and 2:1 molar ratio, respectively: nRLi + GaCl3 = nLiCl + RnGaCl3-n, where n = 1 and 2. Reaction of an alkyllithium compound and gallium chloride in a molar ratio in excess of 3:1 results in formation of the corresponding lithium tetraalkylgallate: 4n-C3H7Li + GaCl3 = 3LiCl + LiGa(n-C3H7)4. Trivinylgallium tetrahydrofuranate is produced by the reaction of vinyllithium and gallium chloride in 3:1 molar ratio in tetrahydrofuran solvent. Infrared, proton magnetic resonance, and mass spectra of RnGaCl3-n compounds where R = C2H5 to C4H9 isomers and n = 1-3 are reported and discussed. Proton magnetic resonance spectra reveal that the chemical shifts for protons on α-carbon atoms are sensitive to substitution on the gallium. An explanation for these chemical shift data along with molecular association data for RnGaCl3-n. compounds is given. Mass spectroscopy can be used as a convenient, diagnostic tool for the identification of organogallium compounds of this type. Ion abundance data for all compounds are presented and the fragmentation processes believed to give these ions are discussed.

A simple synthesis of non-solvated galliumtrialkyls

A simple synthesis of non-solvated galliumtrialkyls is proposed based on the reaction of alkyl iodides with a mixture or an alloy of magnesium and gallium in the absence of a solvent or in aliphatic hydrocarbons.

PROCESS FOR THE PREPARATION OF TRIMETHYL METAL COMPOUNDS

Process for the preparation of a trimethyl metal compound with the formula M(CH3)3, said process comprising the step of reacting a trialkyl metal compound of the formula M(R)3 with trimethyl aluminium [AI(CH3)3] to form said trimethyl metal compound with the formula M(CH3)3, wherein M is selected from the group consisting of Ga and In, and R is a linear or branched alkyl group with 2 to 8 carbon atoms.

High-purity trialkylgallium and its manufacturing method (by machine translation)

PROBLEM TO BE SOLVED: To provide a high purity trialkyl gallium and a simple manufacturing method of the compound.SOLUTION: There is a method of obtaining trialkyl gallium represented by the formula (3) as a main distillate by mixing and reacting trialkyl aluminum represented by the formula (1) and trihalogeno gallium represented by the formula (2), removing a first drop with a reflux ratio of 10 to 25 and setting the reflux ratio at 6 to 15. In the formula (1), R represents an alkyl group having 1 to 6 carbon atoms. In the formula (2), X represents a halogen atom.