624-78-2Relevant articles and documents
ORGANOMETALLIC COMPOUNDS FOR THE DEPOSITION OF HIGH PURITY TIN OXIDE AND DRY ETCHING OF THE TIN OXIDE FILMS AND DEPOSITION REACTORS
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Paragraph 0118, (2021/03/05)
Specific organometallic compounds of Formula I: Qx-Sn-(A1R1'z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.
Mild catalytic deoxygenation of amides promoted by thorium metallocene
Eisen, Moris S.,Saha, Sayantani
supporting information, p. 12835 - 12841 (2020/10/05)
The organoactinide-catalyzed (Cp*2ThMe2) hydroborated reduction of a wide range of tertiary, secondary, and primary amides to the corresponding amines/amine-borane adductsviadeoxygenation of the amides is reported herein. The catalytic reactions proceed under mild conditions with low catalyst loading and pinacolborane (HBpin) concentration in a selective fashion. Cp*2ThMe2is capable of efficiently catalysing the gram-scale reaction without a drop in efficiency. The amine-borane adducts are successfully converted into free amine products in high conversions, which increases the usefulness of this catalytic system. A plausible mechanism is proposed based on detailed kinetics, stoichiometric, and deuterium labeling studies.
HIV INTEGRASE INHIBITORS
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, (2015/09/22)
The present invention features compounds that are HIV integrase inhibitors and therefore are useful in the inhibition of HIV replication, the prevention and/or treatment of infection by HIV, and in the treatment of AIDS and/or ARC.