117944-65-7Relevant articles and documents
Fabrication of zinc indium oxide thin films and effect of post annealing on structural, chemical and electrical properties
Jain, Vipin Kumar,Kumar, Praveen,Srivastava, Subodh,Vijay
, p. 132 - 137 (2012)
In the present study, zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In2O3 - 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposite
The field emission of indium-doped ZnO films fabricated by room temperature DC magnetron sputtering
Ye, Fan,Cai, Xing-Min,Dai, Fu-Ping,Zhang, Dong-Ping,Fan, Ping,Liu, Li-Jun
, p. 64 - 67 (2012)
Indium doped ZnO film was fabricated at room temperature by co-sputtering a zinc target and an indium plate under the flow of oxygen and argon. The film was then characterized and the field emission of the film was studied. The indium composition x in the film (Zn1-xInxO) is 5%. The film is hexagonal without any secondary phases or precipitates. The film has two major emission peaks, one related to the band edge emission and another possibly related to the electron acceptor transition. The possible acceptor is nitrogen occupying oxygen site in ZnO. The film is n-type and very resistive. The turn on field of the film at an emission current density of 10 μA/cm 2 is 17.5 V/μm. The relatively weak field emission property is due to the unintentional incorporation of acceptors such as substitutional nitrogen and oxygen vacancies, which increase the work function of ZnO by reducing the electron density and lowering the Fermi level position of the ZnO:In film.
Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition
Wang, Anchuan,Dai, Jiyan,Cheng, Jizhi,Chudzik, Michael P.,Marks, Tobin J.,Chang, Robert P. H.,Kannewurf, Carl R.
, p. 327 - 329 (1998)
Indium-zinc oxide films (ZnxInyOx+1.5y), with x/y=0.08-12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors In(TMHD)3 and Zn(TMHD)2 (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionato). Films are smooth (rms roughness=40-50A) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000S/cm (n-type; carrier density=3.7×1020cm3; mobility=18.6cm2/Vs; dσ/dT2O3, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered ZnkIn2O3+k phase precipitated in a cubic In2O3:Zn matrix.
