IZO

Base Information

Chemical Name:IZO
CAS No.:117944-65-7
Molecular Formula:In.O.Zn
Molecular Weight:201.24
Hs Code.:

Synonyms:

Suppliers and Price of IZO

Supply Marketing:

Business phase:: The product has achieved commercial mass production^*data from LookChem market partment

Manufacturers and distributors:

Manufacture/Brand
Chemicals and raw materials
Packaging
price

Sigma-Aldrich
Indium zinc oxide 99.99% trace metals basis
1ea
$ 636.00

Total 0 raw suppliers

Chemical Property of IZO

Chemical Property:

Melting Point:1900-1920°C (lit.)

Purity/Quality:: Indium zinc oxide 99.99% trace metals basis ^*data from reagent suppliers

Safty Information:

Pictogram(s):
Hazard Codes:Xi,N
Statements: 36/37/38-50/53
Safety Statements: 26-61

MSDS Files:

Useful:

Technology Process of IZO

There total 5 articles about IZO which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield:

: bis(2,2,6,6-tetramethyl-3,5-heptanedionato) zinc

: tris(2,2,6,6-tetramethyl-3,5-heptanedionato)indium(III)

: 117944-65-7
indium-zinc oxide

Guidance literature:: With O₂; In gaseous matrix; film formation by low-pressure MOCVD from precursors (Zn(TMHD)2 at 78-85°C/32 sccm Ar, In(TMHD)3 at 110-112°C/32 sccm Ar, Ar carrier gas, 200 sccm O2 oxidizer gas, system pressure 470 Pa, substrate temp. 450°C); XRD,;
DOI:10.1063/1.121823

Reference yield:

: bis(2,2,6,6-tetramethyl-3,5-heptanedionato) zinc

: tris(2,2,6,6-tetramethyl-3,5-heptanedionato)indium(III)

: 117944-65-7
indium-zinc oxide

Guidance literature:: With O₂; In gaseous matrix; film formation by low-pressure MOCVD from precursors (Zn(TMHD)2 at 78-85°C/32 sccm Ar, In(TMHD)3 at 110-112°C/32 sccm Ar, Ar carrier gas, 200 sccm O2 oxidizer gas, system pressure 470 Pa, substrate temp. 450°C); HRTEM;
DOI:10.1063/1.121823

Reference yield:

: indium(III) oxide

: zinc(II) oxide

: 117944-65-7
zinc indium oxide

Guidance literature:: In neat (no solvent, gas phase); ZnO:In2O3 (90:10) mixed for 1 h by ball milling; heated in Ta boat at temp. higher than m.p. of evaporants; evapd. on substrate at room temp. atcurrent of 4-5 A at power of 240-350 W at deposition rate of 20.+-.2 .A NG./s at pressure of 1E-6 Torr; XRD; SEM; XPS;
DOI:10.1016/j.jallcom.2012.03.077