7440-74-6

Basic information

• Product Name: Indium
• Synonyms: Indium, shot, 2-5mm diam., 99.9+% metals basis;INDIUM, SHOT, 2-5MM DIAM., 99.999%;INDIUM, WIRE, 2.0MM DIAM., 99.99%;INDIUM GRANULATED;INDIUM, FOIL, 0.25MM THICK, 99.999%;INDIUM RODS;INDIUM, FOIL, 0.1MM THICK, 99.999%;INDIUM, FOIL, 1.0MM THICK, 99.999%
• CAS NO: 7440-74-6
• Molecular Formula: In
• Molecular Weight: 114.82
• EINECS: 231-180-0
• Product Categories: Inorganics;Indium;Metal and Ceramic Science;Metals;Catalysis and Inorganic Chemistry;Chemical Synthesis;IndiumMetal and Ceramic Science;IApplication CRMs;ICP CRMs;Alphabetic;Analytical Standards;ICP-OES/-MS;ICPSpectroscopy;Spectroscopy;metal or element
• Mol File: 7440-74-6.mol
• Article Data: 108

Chemical Properties

• Melting Point: 156 °C
• Boiling Point: 2000 °C
• Flash Point: 2072°C
• Appearance: White/wire
• Density: 7.3 g/mL at 25 °C(lit.)
• Vapor Pressure: <0.01 mm Hg ( 25 °C)
• Storage Temp.: Flammables area
• Water Solubility: insoluble
• Stability: Stable. Incompatible with strong acids, strong oxidizing agents, sulfur.
• Merck: 14,4947
• CAS DataBase Reference: Indium(CAS DataBase Reference)
• NIST Chemistry Reference: Indium(7440-74-6)
• EPA Substance Registry System: Indium(7440-74-6)

Safety Data

• Hazard Codes: C,Xn,F,Xi
• Statements: 25-26-34-36/37/38-20/21/22-20-11-36/38
• Safety Statements: 9-16-36/37/39-36-26-45-28
• RIDADR: UN 3089 4.1/PG 2
• WGK Germany: 3
• RTECS: NL1050000
• TSCA: Yes
• HazardClass: 8
• PackingGroup: III
• Hazardous Substances Data: 7440-74-6(Hazardous Substances Data)

Usage

Description

Indium lies in Group 13 (13th vertical column of the periodic table). it shows a wide variety of properties. It is considered to be metal of the 'poor metals' group. Indium (symbol Ga; CAS# 7440-74-6) is widely used in the electronics industry, its radioisotopes are used for diagnostic imaging in medicine. Though this element is not essential for human nutrition, it is widely distributed in low concentrations in the environment (Smith et al., 1978). Radioisotopes of indium have been used to label phagocytes and lymphocytes to localize inflammatory lesions (Dudley and Marrer, 1952; Abrams and Murrer, 1993). Despite early optimism, neither element has found wide use as a treatment for malignancies.

Chemical Properties

Indium is a rare, lustrous silver-white metal with atomic number 49 and In as its atomic symbol. It is widely distributed in the Earth’s crust in minute quantities (0.1 ppm) and is also found in the hydrosphere. Indium belongs to group IIIA in the periodic table. It was found and spectroscopically identified as a minor component in zinc ores and isolated in 1863 by Ferdinand Reich and Theodore Richter. Indium is so named for the indigo blue color that its salts lend to flames. Indium resembles tin in its physical and chemical properties and to some extent in its toxicological properties. It is extremely soft and malleable, with a Brinell test hardness of less than 1 and a Mohs scale hardness of 1.2. In the electromotive series, it appears between iron and tin and does not decompose inwater at boiling temperature. It is stable in air, but when heated, it burns with a nonluminous, blue-red flame yielding indium oxide. The surface of indium remains bright up to its melting point; above this, it forms an oxide film.Indium is flammable in the form of dust, yielding indium oxide when exposed to heat or flame. Mixtures of indium with sulfur ignite when heated. Indium reacts explosively with dinitrogen tetroxide plus acetonitrile. Indium exhibits a violent reaction with mercury(II) bromide at 350°C. Indium is unaffected by water, is attacked by mineral acids, and is very resistant to alkalies.

Physical properties

Indium is silvery-white and malleable and looks much like aluminum and tin. However,it is softer than lead. Indium metal is so soft that it cannot be “wiped” onto other surfaces aswith a graphite pencil. Because it is noncorrosive and does not oxidize at room temperatures,it can be polished and will hold its shine better than silver. Its melting point is 156.60°C, itsboiling point is 2,075°C, and its density is 7.31 g/cm3.

Isotopes

There are a total of 73 isotopes of indium. All are radioactive with relativelyshort half-lives, except two that are considered stable. Isotope In-113 makes up just4.29% of the total indium found in the Earth’s crust. The isotope In-115, with a half-lifeof 4.41×10-14 years contributes the balance (95.71%) of the element’s existence in theEarth’s crust.

Origin of Name

Indium’s name is derived from the Latin word indicum, meaning “indigo,” which is the color of its spectral line when viewed by a spectroscope.

Occurrence

Indium is a rather rare metal. It is the 69th most abundant element, which is about asabundant as silver at 0.05 ppm. Although it is widely spread over the Earth’s crust, it is foundin very small concentrations and always combined with other metal ores. It is never found inits natural metallic state.Indium is recovered as a by-product of smelting other metal ores such as aluminum,antimony, cadmium, arsenic, and zinc. About 1,000 kg of indium is recovered each year (ora concentration of 1 part indium per 1000 parts of dust) from the flue stacks (chimneys) ofzinc refineries.Indium is found in metal ores and minerals located in Russia, Japan, Europe, Peru, andCanada, as well as in the western part of the United States.

Characteristics

Indium has one odd characteristic in that in the form of a sheet, like the metal tin, it willemit a shrieking sound when bent rapidly. Indium has some of the characteristics of othermetals near it in the periodic table and may be thought of as an “extension” of the secondseries of the transition elements. Although it is corrosion-resistant at room temperature, it willoxidize at higher temperatures. It is soluble in acids, but not in alkalis or hot water.

History

Discovered by Reich and Richter, who later isolated the metal. Indium is most frequently associated with zinc materials, and it is from these that most commercial indium is now obtained; however, it is also found in iron, lead, and copper ores. Until 1924, a gram or so constituted the world’s supply of this element in isolated form. It is probably about as abundant as silver. About 4 million troy ounces ofindium are now produced annually in the Free World. Canada is presently producing more than 1,000,000 troy ounces annually. The present cost of indium is about $2 to $10/g, depending on quantity and purity. It is available in ultrapure form. Indium is a very soft, silvery-white metal with a brilliant luster. The pure metal gives a high-pitched “cry” when bent. It wets glass, as does gallium. Indium has found application in making low-melting alloys; an alloy of 24% indium–76% gallium is liquid at room temperature. Indium is used in making bearing alloys, germanium transistors, rectifiers, thermistors, liquid crystal displays, high definition television, batteries, and photoconductors. It can be plated onto metal and evaporated onto glass, forming a mirror as good as that made with silver but with more resistance to atmospheric corrosion. There is evidence that indium has a low order of toxicity; however, care should be taken until further information is available. Seventy isotopes and isomers are now recognized (more than any other element). Natural indium contains two isotopes. One is stable. The other, 115In, comprising 95.71% of natural indium is slightly radioactive with a very long half-life.

Uses

Different sources of media describe the Uses of 7440-74-6 differently. You can refer to the following data:
1. In bearing alloys; as a thin film on moving surfaces made from other metals. In dental alloys. In semiconductor research. In nuclear reactor control rods (in the form of an Ag-In-Cd alloy).
2. Indium element is used in the synthesis of therapeutic particles containing metal ions; characterized by the use of unique ligand sets capable of making the metal ion complex soluble in biolgical medi a to induce selective toxicity in diseased cells.
3. Indium’s low melting point is the major factor in determining its commercial importance.This factor makes it ideal for soldering the lead wires to semiconductors and transistors in theelectronics industry. The compounds of indium arsenide, indium antimonide, and indiumphosphide are used to construct semiconductors that have specialized functions in the electronicsindustry.Another main use is as an alloy with other metals when it will lower the melting point ofthe metals with which it is alloyed. Alloys of indium and silver and indium and lead have theability to carry electricity better than pure silver and lead.Indium is used as a coating for steel bearings to increase their resistance to wear. It alsohas the ability to “wet” glass, which makes it an excellent mirror surface that lasts longer than mercury mirrors. Sheets of indium foil are inserted into nuclear reactors to help control thenuclear fission reaction by absorbing some of the neutrons.

Definition

Different sources of media describe the Definition of 7440-74-6 differently. You can refer to the following data:
1. A soft silvery metallic element belonging to group 13 of the periodic table. It is found in minute quantities, primarily in zinc ores and is used in alloys, in several electronic devices, and in electroplating. Symbol: In; m.p. 155.17°C; b.p. 2080°C; r.d. 7.31 (25°C); p.n. 49; r.a.m. 114.818.
2. indium: Symbol In. A soft silvery elementbelonging to group 13 (formerlyIIIB) of the periodic table; a.n.49; r.a.m. 114.82; r.d. 7.31 (20°C);m.p. 156.6°C; b.p. 2080±2°C. It occursin zinc blende and some iron oresand is obtained from zinc flue dust intotal quantities of about 40 tonnesper annum. Naturally occurring indiumconsists of 4.23% indium–113(stable) and 95.77% indium–115 (halflife6 × 1014 years). There are a furtherfive short-lived radioisotopes.The uses of the metal are small –some special-purpose electroplatesand some special fusible alloys. Severalsemiconductor compounds areused, such as InAs, InP, and InSb.With only three electrons in its valencyshell, indium is an electron acceptorand is used to dope puregermanium and silicon; it forms stableindium(I), indium(II), and indium(III) compounds. The elementwas discovered in 1863 by FerdinandReich (1799–1882) and HieronymusRichter (1824–90).
3. ChEBI: A metallic element first identified and named from the brilliant indigo (Latin indicum) blue line in its flame spectrum.

Production Methods

Mineral sources are most commonly dark sphalerite (ZnS), marmatite, and christophite (FeS:ZnS). Indium also occurs in small quantities in tin ores, siderite, and manganese and tungsten ores.Gallium is often associated with indium in zinc and tin ores. Many sulfide ores of copper, iron, lead, cobalt, and bismuth contain small quantities of indium. Zinc smelter flue dusts, in some cases, contain more than 1% indium, and are the largest commercial source of the metal. Other commercial sources are plant residues and dross from the refining of zinc, lead, and cadmium. Indium is recovered from zinc processing residues by acid leaching followed by chemical separation from the accompanying elemental impurities such as zinc, cadmium, aluminum, arsenic, and antimony. Final purification by aqueous electrolysis of the salts at a controlled potential yields a product of 99.9% purity. Canada and Peru supply the greatest amounts of unwrought waste and scrap. Next in order are Japan, Germany, and the United Kingdom. The pattern of indium usage, and potential industrial hazard, is 30% in solders, low-melting alloys, and coatings; 30% in instrument applications and holding devices; 18% in electronic components; 6% in nuclear reactor controls; and 16% in research and other uses.

General Description

Soft, ductile, shiny, silver-white metal. Mp: 155.6°C; bp: 2080°C. Density 7.31 g cm-3.

Reactivity Profile

Indium is a non-combustible solid in bulk form but is flammable in the form of a dust. Reacts with strong oxidizing agents. Reacts explosively with dinitrogen tetraoxide dissolved in acetonitrile. Reacts violently with mercury(II)bromide at 350°C. Mixtures with sulfur ignite when heated.

Hazard

Different sources of media describe the Hazard of 7440-74-6 differently. You can refer to the following data:
1. Metal and its compounds are toxic by inhalation.
2. Indium metal dust, particles, and vapors are toxic if ingested or inhaled, as are most of thecompounds of indium. This requires the semiconductor and electronics industries that useindium compounds to provide protection for their workers.

Health Hazard

Indium (In) and compounds cause injury to the lungs, liver and kidneys in animals. There are no reports of toxicity in humans. When indium was applied to the skin there was no evidence of irritation.

Industrial uses

Indium (symbol In) is a silvery-white metal with a bluish hue, whiter than tin.It is very ductile and does not work-harden, because its recrystallization point is below normal room temperature, and it softens during rolling. The metal is not easily oxidized, but above its melting point, 157 C, it oxidizes and burns with a violet flame. Indium is now obtained as a by-product from a variety of ores. Because of its bright color, light reflectance, and corrosion resistance, it is valued as a plating metal, especially for reflectors. It is softer than lead, but a hard surface is obtained by heating the plated part to diffuse the indium into the base metal. It has high adhesion to other metals. When added to chromium plating baths it reduces brittleness of the chromium.The three largest uses of indium are in semiconductordevices, bearings, and low meltingpointalloys.

Carcinogenicity

Indium has not been tested for its ability to cause cancer in animals. However, the probable carcinogenic properties of indium are linked to alterations in the synthesis and maintenance of enzyme systems that metabolize organic carcinogens. A compromise in the ability of these metabolic systems would lead to altered cellular responses to organic carcinogenic substances.

Purification Methods

Before use, the metal surface is cleaned with dilute HNO3, followed by thorough washing with water and an alcohol rinse. [D.nges in Handbook of Preparative Inorganic Chemistry (Ed. Brauer) Academic Press Vol I p 856 1963.]

InChI:InChI=1/In

Synthetic route

indium sulfate → indium (7440-74-6)

Conditions	Yield
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; electrolyte: in the presence of K-Na-tartarate;	100%
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; in the presence of H2SO4;	100%
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; in the presence of acetic acid, Na-acetate;	100%

triisobutylindium (6731-23-3) → indium (7440-74-6) + isobutene (115-11-7)

Conditions	Yield
In decalin byproducts: isobutane; pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;	A >99 B 96%

([(2,6-i-Pr2-C6H3)NC(Me)]2CH)Ga(Et)InEt2 → indium (7440-74-6) + ([(2,6-i-Pr2-C6H3)NC(Me)]2CH)GaEt2 + Triethylindium (923-34-2)

Conditions	Yield
In toluene at 20℃; for 24h; Inert atmosphere; Schlenk technique; Glovebox;	A 96% B 94% C n/a

cobaltocene (1277-43-6) + indium(I) trifluoromethanesulfonate (675617-71-7) → indium (7440-74-6) + [(η(5)-C5H5)2Co]O3SCF3

Conditions	Yield
In dichloromethane addn. of soln. of Cp2Co in CH2Cl2 to suspn. of InOTf in CH2Cl2; pptn., filtration, rinsing of ppt. with CH2Cl2; removal of solvent in vac.; slow evapn of concd. CH2Cl2 soln.; crystn.;	A n/a B 90.1%

indium(II) bromide → indium (7440-74-6) + indium tribromide (13465-09-3)

Conditions	Yield
With dimethyl sulfoxide In benzene	A 90% B n/a
With [2,2]bipyridinyl In benzene	A 90% B n/a
With triethylamine In benzene	A 90% B n/a

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,2-di-p-tolylethane (538-39-6)

Conditions	Yield
In xylene pyrolysis in p-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 85%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,2-di-m-tolylethane (4662-96-8)

Conditions	Yield
In m-xylene=m-xylol pyrolysis in m-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 83%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,2-bis(2-methylphenyl)ethane (952-80-7)

Conditions	Yield
In o-xylene=o-xylol pyrolysis in o-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 72%

triisopropyl indium (17144-80-8) → indium (7440-74-6) + 1,2-di-p-tolylethane (538-39-6)

Conditions	Yield
In xylene pyrolysis in p-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 67%

indium chloride + lithium pentamethylcyclopentadienide (51905-34-1) → indium (7440-74-6) + indiumpentamethylcyclopentadienide + bis(pentamethylcyclopentadienyl)indium(III) chloride (117469-41-7) + decamethylfulvalene (69446-48-6)

Conditions	Yield
In diethyl ether InCl added to suspension of Li(C5(CH3)5), stirred for 5h at room temp.; exclusion of air and moisture; filtered, washed four times with ether, sublimation; elem. anal.;	A 21% B 62.01% C 5% D 2.5%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 2,2',3,3'-tetrahydro-1H,1'H-1,1'-biindene (82721-36-6)

Conditions	Yield
In further solvent(s) pyrolysis in indane under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 62%

tri-n-butylindium (15676-66-1) → 1-butylene (106-98-9) + indium (7440-74-6)

Conditions	Yield
In decalin byproducts: butene; pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;	A 60% B >99

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,2-bis(4-chlorophenyl)ethane (5216-35-3)

Conditions	Yield
In further solvent(s) pyrolysis in p-chlorotoluene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 60%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,1'-bitetralyl (1154-13-8)

Conditions	Yield
In tetralin pyrolysis in tetralin under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 60%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 2,3-diphenylbutane (1857-74-5, 2726-21-8, 4539-34-8, 4613-11-0, 71606-46-7, 5789-35-5)

Conditions	Yield
In ethylbenzene pyrolysis in ethylbenzene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 51%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 3,4-dimethylhexane (583-48-2) + butene-2 (107-01-7) + n-butane (106-97-8)

Conditions	Yield
In decalin pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;	A >99 B 10% C 30% D 40%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,2-bis(4-methoxyphenyl)ethane (1657-55-2)

Conditions	Yield
In further solvent(s) pyrolysis in p-methoxytoluene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 35%

K(1+)*{HIn(CH2C(CH3)3)3}(1-)=K{HIn(CH2C(CH3)3)3} (139408-74-5) + Chlorodiisopropylphosphane (40244-90-4) → indium (7440-74-6) + (((CH3)3CCH2)2In(P(CH(CH3)2)2))2 (380456-91-7) + ((CH3)3CCH2)3In*P(H)(CH(CH3)2)2 (380456-92-8) + ((CH3)3CCH2)3In*P2(CH(CH3)2)4 (380456-93-9)

Conditions

Yield

In pentane byproducts: H2, (Me3CCH2)P(i-Pr)2, KCl; under Ar, standard vac. line techniques; pentane solns. of ClP(i-Pr)2 and In compd. (molar ratio 1:1) cooled to -78°C; combined; warmed slowly to room temp.; stirred for 2 d; pentane sol. products sepd. from ppt. by extn. (8 times); solvent removed by vac. distn. at 0°C; mixt. of three In compds. obtained; P2(i-Pr)4 adduct crystd. at room temp. in drybox; detd. by (1)H and (31)P NMR spectroscopy;

A n/a B n/a C n/a D 33.7%

indium chloride + N,N,N,N,-tetramethylethylenediamine (110-18-9) + indium(III) chloride (10025-82-8) → indium (7440-74-6) + Cl2InCH2InCl2((CH2N(CH3)2)2)2 (99666-60-1) + InCl3*0.67(CH2N(CH3)2)2*0.67CH2Cl2

Conditions

Yield

With methylene chloride In dichloromethane; toluene equimolar amts. of InCl and InCl3 suspended in CH2Cl2-toluene (1:1, v/v) at -80°C, TMEDA added, stirred, allowed to reach room temp., further stirred for 1 h (total react. time 3-4 h); filtered, crystals deposited on standing collected and dried under vac., further crop obtained by addn. of Et2O to mother liquor and recrystn. (CH2Cl2); InCl3 solvate isolated from separate expt. by addn. of petroleum ether to react. mixt.; elem. anal.;

A n/a B 20% C n/a

lithium tetrahydridoindanate (128448-03-3) + quinuclidine hydrochloride (39896-06-5) + lithium bromide (7550-35-8) → indium (7440-74-6) + [H(quinuclidine)2][In5Br8(quinuclidine)4]

Conditions	Yield
In diethyl ether byproducts: H2, LiCl; quinuclidine hydrochloride added over 5 min to an in situ generated soln. of LiInH4 contg. LiBr in Et2O at -78°C, warmed to -30°C,stirred for 2 h, filtered, kept at this temp. for 72 h; evapd. (vac.), extd. (toluene), crystd. at -50°C overnight;	A n/a B 17%

indium(I) bromide + sodium tri-tert-butylsilanide (103349-41-3) → indium (7440-74-6) + tetrasupersilyldiindium (174809-84-8)

Conditions	Yield
In tetrahydrofuran byproducts: tBu3SiH, tBu3SiBr, (tBu3Si)2; equimolar ratio, stirring (-78°C, 12 h), warming (room temp.); volatile compds. removal (vac.), dissoln. (pentane), filtn., pptn. (1 week, -23°C); elem. anal.;	A n/a B 16.2%
In tetrahydrofuran byproducts: NaBr; equimolar ratio, stirring (-78°C, 12 h), warming (room temp.); volatile compds. removal (vac.), dissoln. (pentane), filtn., pptn. (1 week, -23°C); elem. anal.;	A n/a B 16.2%

(Cp(*)Fe(CO)2)2InI (871347-07-8) + sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate (79060-88-1) → indium (7440-74-6) + [((η5-C5Me5)Fe(CO)2)2(μ-I)][B(C6H3(CF3)2-3,5)4] (871347-11-4)

Conditions	Yield
In dichloromethane (N2 or Ar); a soln. of Fe complex added to a suspn. of B complex at -78°C, warmed to 20°C over 30 min, stirred for 3 h; filtered, layered with hexanes;	A n/a B 15%

[(C2H5)2InSb(Si(CH3)3)2]3 → indium (7440-74-6) + indium(III) antimonide

Conditions	Yield
In neat (no solvent) byproducts: ethylene, HSiMe3; heated under vac. to 400°C for 10 h;	A n/a B 13%

indium chloride + N,N,N,N,-tetramethylethylenediamine (110-18-9) + indium(III) chloride (10025-82-8) → indium (7440-74-6) + Cl2InCH2InCl2((CH2N(CH3)2)2)2 (99666-60-1)

Conditions	Yield
With methylene chloride In dichloromethane InCl and catalitic amts. of InCl3 suspended in CH2Cl2 at -80°C, TMEDA added, allowed to reach room temp. over ca. 2 h; Et2O added, ppt. collected, dried;	A n/a B 10%

dicarbonylcyclopentadienyliodoiron(II) (12078-28-3, 38979-86-1) + [CH((CH3)2CN-2,6-(i)Pr2C6H3)2In] (769959-24-2) + sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate (79060-88-1) → indium (7440-74-6) + [((2,6-diisopropylphenyl-NC(Me))2CH)Fe(III)(η5-cyclopentadienyl)(CO)][B(C6H3(CF3)2-3,5)4] (1036767-96-0)

Conditions	Yield
In tetrahydrofuran under N2 or Ar; THF added to solid mixt. of Fe complex and NaB(C6H3(CF3)2)4; THF soln. of In compd. added; volatiles removed; extd. into toluene; soln. filtered; layered with hexane; crystd. for 1 wk; elem. anal.;	A n/a B 10%

indium(III) oxide → indium (7440-74-6)

Conditions	Yield
With magnesium violent but incomplete reaction;
With sodium carbonate; pyrographite in blow pipe;
With hydrogen in tube with H2-flow;

indium(III) oxide + manganese (7439-96-5) → indium (7440-74-6) + manganese(II) oxide

Conditions	Yield
In neat (no solvent) (Ar); In2O3 and Mn reacted in 1:1 or 1:2 or 2:1 molar ratio; powdered inmortar; sealed under vacuum in quartz ampoule; heated to 723 K and with 0.5 K/h to 973 K; maintained for 7 days; cooled to 0.8 K/h to 473 K; le ft standing at room temp.;

indium (7440-74-6) + water (7732-18-5) → hydrogen (1333-74-0)

Conditions	Yield
byproducts: In2O3; at 473°K and then at 673-773°K more;	100%

arsenic + indium (7440-74-6) → indium arsenide

Conditions	Yield
In neat (no solvent) In, As evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 150h;	100%
In neat (no solvent) deposited at GaAs by periodic supply of As and Ga species, deposition times was 25 min;
In, As sources used on InAs substrate at 450 to 525°C;
In neat (no solvent) mixt. melting (evac. sealed quartz capsule, 7E-4 hPa); differential thermal anal.;
In neat (no solvent, solid phase) annealing (800 K, 7 d);

indium (7440-74-6) + antimony (7440-36-0) → indium(III) antimonide

Conditions	Yield
In neat (no solvent) In, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 500.+-.20°C, 70h or heated at 400.+-.20°C, 110h;	100%
In melt crystn. from the melt with nearly stoichiometric composition;; single crystals obtained;;
In neat (no solvent) High Pressure; 0.7 GPa, laser heating;

indium (7440-74-6) + 2,3-naphthalenediol (92-44-4) → In{OC10H6(OH)-2,3} (121581-68-8, 121581-73-5)

Conditions	Yield
With Et4NClO4 In acetonitrile byproducts: H2; Electrolysis; using indium metall anode, platinum wire cathode in soln. of Et4NClO4 and dihydroxynaphthalene (2 h, N2, 20 mA), hydrogen gas evolving at the cathode and forming product at the anode; product collected by filtration, washed with acetonitrile and Et2O, dried (vac.); elem. anal.;	100%

indium (7440-74-6) + lanthanum (7439-91-0) + tellurium + cesium chloride → CsInTe2 + Cs3LaCl6

Conditions	Yield
at 299.84 - 999.84℃;	A 100% B n/a

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0286Sn0286In0143Sb0143Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.72Sn0.08In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.24Sn0.56In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.08Sn0.72In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.4Sn0.4In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.35Sn0.35In0.1Sb0.1Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.5Sn0.5InSbTe4

Conditions	Yield
at 550 - 950℃; for 240h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → GeSnInSbTe5

Conditions	Yield
at 350 - 950℃; for 240h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tellurium → Ge0.8In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Sn0.8In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + tin (7440-31-5) + tellurium → Ge0.4Sn0.4In0.13Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

indium (7440-74-6) + trifluorormethanesulfonic acid (1493-13-6) + dimethyl sulfoxide (67-68-5) → indium(III) triflate - dimethylsulfoxide (1/7)

Conditions	Yield
With oxygen In dimethyl sulfoxide metal. In under O2 atm. treated with DMSO and triflic acid (3 equiv.) in3 portions, heated at 100°C for 22 h;	99%

arsenic + niobium + indium (7440-74-6) + potassium (7440-09-7) → 10K(1+)*NbInAs6(10-)=K10NbInAs6

Conditions	Yield
In neat (no solvent) mixt. K, Nb, In, and As was sealed in Nb container, enclosed in evacuated fused-silica ampule and heated at 600°C for a week and cooled slowly; elem. anal.;	99%

gadolinium + germanium (7440-56-4) + indium (7440-74-6) → Gd2InGe2

Conditions	Yield
In neat (no solvent) (Ar); a mixt. of Gd, Ge, and In sealed (vac.), heated;	99%

indium (7440-74-6) + lanthanum (7439-91-0) + gold (7440-57-5, 457905-15-6) → LaAu2In4

Conditions	Yield
In melt heating lanthanum, gold and indium in molar ratio 1:2:4 to 1000 for 10 hin vac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;	99%

indium (7440-74-6) + praseodymium + gold (7440-57-5, 457905-15-6) → PrAu2In4

Conditions	Yield
In melt heating praseodymium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h in vac., keeping at 1000°C for 120 h; cooing to room temp. for 48 h, X-ray anal.;	99%

cerium (7440-45-1) + indium (7440-74-6) + gold (7440-57-5, 457905-15-6) → CeAu2In4

Conditions	Yield
In melt heating cerium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h invac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;	99%

tetrahydrofuran (109-99-9) + indium (7440-74-6) + bromopentafluorobenzene (344-04-7) + bromine (7726-95-6) → bis(tetrahydrofuran)(pentafluorophenyl)indium dibromide

Conditions	Yield
In tetrahydrofuran	99%

pyridine (110-86-1) + indium (7440-74-6) + bromopentafluorobenzene (344-04-7) + bromine (7726-95-6) → bis(pyridine)(pentafluorophenyl)indium dibromide

Conditions	Yield
In dichloromethane	99%

neodymium + indium (7440-74-6) + gold (7440-57-5, 457905-15-6) → NdAu2In4

Conditions	Yield
In melt heating neodymium, gold and indium in molar ratio 1:2:4 to 1000 for 10 hin vac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;	99%

indium (7440-74-6) + toluene-4-sulfonic acid (104-15-4) → indium(III) tosylate

Conditions	Yield
In nitromethane at 20℃; for 1.5h; Sonication;	99%

indium (7440-74-6) + ethanethiol (75-08-1) → tris(ethylthio)indane

Conditions	Yield
With oxygen; tetraethylammonium perchlorate In acetonitrile Electrolysis; bubbling O2 through a soln. of thiol in CH3CN/Et4NClO4, electrolysis (open to atmosphere): Pt cathode, In anode, 15V, 50 mA, 1.0 h react. time, at the end of electrolysis stirring for ca. 12 h; filtration, washing with CH3CN, then petroleum ether, drying in vac.; elem. anal.;	98%

indium (7440-74-6) + trifluorormethanesulfonic acid (1493-13-6) → indium(III) triflate

Conditions	Yield
In nitromethane at 20℃; for 0.5h; Sonication;	98%

Upstream product

• 10025-82-8 indium(III) chloride 
• 3385-78-2 trimethyl indium 
• 17144-80-8 triisopropyl indium 
• 12672-70-7 indium chloride 
• 110-18-9 N,N,N,N,-tetramethylethylenediamine 
• 1153-06-6 triphenyllead(IV) chloride 
• 51905-34-1 lithium pentamethylcyclopentadienide 
• 22398-80-7 indium(III) phosphide 
• 80937-33-3 oxygen 
• 13465-09-3 indium tribromide 

Downstream Products

• 545394-29-4 (2E)-N-(3-amino-4-chlorophenyl)-3-[4-(tert-butyl)phenyl]prop-2-enamide 
• 13465-09-3 indium tribromide 
• 14280-53-6 bromoindium 
• 12030-05-6 indium(III) nitride 
• 13510-35-5 I₃In, crI 
• 201227-86-3 InI₃(As(C₆H₅)3)*InI₃(As(C₆H₅)3)2*H₂O 
• 74355-18-3 [(C₄H₉)4N]⁽¹⁺⁾*[C₆H₅InI₃]^(1-)=[(C₄H₉)4N][C₆H₅InI₃] 
• 12030-05-6 indium nitride 
• 13510-35-5 indium(III) iodide 
• 7783-52-0 indium fluoride 
• 877238-62-5 indium(I) hexafluoroarsenate 
• 31569-56-9 tris-(pentafluoro phenyl) indane 
• 7440-69-9 bismuth 
• 12672-70-7 indium chloride 

Relevant articles and documents

Formation and thermal decomposition of indium oxynitride compounds

During the reactions of lithium oxide with indium nitride, lithium nitride with indium oxide, and lithium nitride with lithium indate LiInO2, the formation of a previously unknown crystalline phase, of composition Li4InNO2, was observed. The course of thermal decomposition of the new compound was determined.

Electrodeposition of indium onto Mo/Cu for the deposition of Cu(In,Ga)Se2 thin films

A study of the electrodeposition and the oxidation process of indium on Mo/Cu substrates from a bath containing 0.008 M InCl3, 0.7 M LiCl at pH 3 is described in this work. The voltamperometric study showed a reduction process which corresponds to the conversion of In3+ to In0 and an oxidation process which takes place in different steps. Utilizing the chronoamperometric technique the total efficiency of process, the number of monolayers, the film thickness and the diffusion coefficient were evaluated. The analysis of current transients, using theoretical growth model, showed that the electrodeposition of indium adjusts to a three-dimensional growth under instantaneous nucleation limited by diffusion. The kinetic growth parameters were evaluated through a non-linear fit. The films were characterized by X-ray diffraction and scanning electron microscopy techniques. These studies showed that the films were of crystalline in nature with compact and uniform surface, even for the film with a deposition time of 1 min.

Synthesis, characterisation and theoretical studies of amidinato-indium(I) and thallium(I) complexes: Isomers of neutral group 13 metal(I) carbene analogues

The synthesis and characterisation of the monomeric amidinato-indium(I) and thallium(I) complexes, [M(Piso)]PisoH, M = In or Tl, Piso- = [ArNC(But)NAr]-, Ar = C6H3Pr 2i-2,6, are reported. These complexes, in which the metal centre is chelated by the amidinate ligand in an N,η3-arene- fashion, can be considered as isomers of four-membered group 13 metal(I) carbene analogues. Theoretical studies have compared the relative energies of both isomeric forms of a model complex, [In{PhNC(H)NPh}]. The Royal Society of Chemistry 2005.

Reduction of indium(III) oxide to indium through mechanochemical route

A nonthermal reduction of indium(III) oxide (In2O3) to metallic indium (In) was achieved through mechanochemical route in this work. A mixture of In2O3 and lithium nitride (Li3N) under ammonia (NH3) and/or nitrogen (N2) gas environments was milled in a planetary ball mill with uni-size ZrO2 balls to induce mechanochemical reaction between the starting materials. Metallic indium was obtained after milling for 120 min, and the results are confirmed by X-ray diffraction (XRD) analysis. Washing of the milled product with water to remove by-products using the planetary ball mill for a further 10 min resulted in formation of pellets which were analyzed by EPMA, results clearly show that high purity indium metal was obtained. Copyright

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The chemical interaction of the indium-gallium eutectic with Al and Al-base alloys is studied by x-ray diffraction, optical microscopy, and electron microscopy. Experimental data are presented that shed light on the reaction mechanism and the diffusion processes responsible for the subsequent disintegration of the material and its dissolution in water. Mechanical tests show that the activation of aluminum leads to a transition from plastic to brittle fracture. Pleiades Publishing, Inc., 2006.

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Shape-controlled metal nanoparticles are of interest because of their wide range of properties that are useful for applications that include optics, electronics, magnetism, and catalysis. Indium metal is an attractive target for nanoparticle synthesis because it is superconducting, plasmonically active, and is a component in low-melting solders and solid-state lubricants. Indium nanoparticles are typically synthesized using harsh physical or chemical techniques, and rigorous shape control is difficult. Here we present a simple and robust kinetically controlled process for synthesizing shape-controlled indium nanoparticles. By controlling the rate of dropwise addition of a solution of NaBH4 in tetraethylene glycol to an alcoholic solution of InCl3 and poly(vinyl pyrrolidone), indium nanoparticles are formed with shapes that include high aspect ratio nanowires and uniform octahedra and truncated octahedra. The zero-dimensional indium nanoparticles exhibit an SPR band centered around 400 nm, and all morphologies are superconducting (Tc = 3.4 K) with higher critical fields than bulk indium. Copyright

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Treatment of the tetrahedral indium(I) cluster compound In4[C(SiMe3)3]4 (1) with a mixture of All3 and I2 afforded the yellow diiodotriindium compound In3I2[C(SiMe3)3]3 (2) in 73% yield. 1 contains a chain of three indium atoms connected by In-In single bonds. A trigonal bipyramidal structure resulted in the solid state by two iodide bridges between the terminal indium atoms.

Directed growth of single-crystal indium wires

Tailored electric fields were used to direct the dendritic growth of crystalline indium wires between lithographic electrodes immersed in solutions of indium acetate. Determination of the conditions that suppress sidebranching on these structures has enabled the fabrication of arbitrarily long needle-shaped wires with diameters as small as 370 nm. Electron diffraction studies indicate that these wires are crystalline indium, that the unbranched wire segments are single-crystal domains, and that the predominant growth direction is near 〈110〉. This work constitutes a critical step towards the use of simply prepared aqueous mixtures as a convenient means of controlling the composition of submicron, crystalline wires.

Electrodeposition of selenium, indium and copper in an air- and water-stable ionic liquid at variable temperatures

The electrochemical behaviour of Au(1 1 1) and highly oriented pyrolytic graphite (HOPG) substrates in the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([BMP]Tf2N) was investigated using in situ scanning tunneling microscopy (STM). Furthermore, the electrodeposition of Se, In and Cu in the same ionic liquid was investigated. The high thermal stability as well as the large electrochemical window of this ionic liquid compared with aqueous electrolytes allow the direct electrodeposition of grey selenium, indium and copper at variable temperatures, as the first step in making CIS solar cells electrochemically, in a one pot reaction. The results show that grey selenium can be obtained at temperatures ≥100 °C. XRD patterns of the electrodeposit obtained at 100 °C show the characteristic peaks of crystalline grey selenium. Nanocrystalline indium with grain sizes between 100 and 200 nm was formed in the employed ionic liquid, containing 0.1 M InCl3, at room temperature. It was also found that copper(I) species can be introduced into the ionic liquid [BMP]Tf2N by anodic dissolution of a copper electrode and nanocrystalline copper with an average crystallite size of about 50 nm was obtained without additives in the resulting electrolyte.

Preparation of [Et2InSb(SiMe3)2]3; A trimeric single-source precursor to indium antimonide

The 1:1 mole ratio reaction of Et2InCl with Sb(SiMe3)3 results in the formation of [Et2InSb(SiMe3)2]3 (1), a trimeric compound containing a six-membered indium-antimony ring. An X-ray crystal structure has been obtained for the compound substantiating the trimeric nature of 1 in the solid state, however variable-temperature 1H-NMR studies show a dimer/trimer equilibrium for this species in solution. Preliminary thermolysis studies demonstrate its utility in the formation of nanocrystalline InSb.

Selective and Direct Formation of Ethene from CO and H2 over In2O3-Y2O3, -La2O3, and -CeO2 Catalysts

Ethene is slectively formed from CO and H2 over In2O3-containing oxide catalysts such as In2O3-Y2O3, -La2O3, and -CeO2 at 673 K and 67 kPa with the highest selectivity of 43percent for hydrocarbons.

Synthesis of Heterobimetallic Group 13 Compounds via Oxidative Addition Reaction of Gallanediyl LGa and InEt3

Equimolar amounts of LGa (L = [(2,6-i-Pr2-C6H3)NC(Me)]2CH) and InEt3 were found to react with insertion into the In-carbon bond and formation of LGa(Et)InEt2 (1), while in the presence of the N-heterocyclic carbene It-Bu [C(Nt-Bu2CH)2], the base-stabilized compound LGa(Et)Et2In←It-Bu (2) was formed, which shows an abnormal binding mode of the NHC group. In addition, the reaction of InEt3 with two equivalents of LGa occurred with double insertion and formation of [LGa(Et)]2InEt (3). 1-3 were characterized by heteronuclear NMR (1H, 13C) and IR spectroscopy, their solid-state structures were determined by single-crystal X-ray analyses, and their thermal stability was investigated by in situ NMR spectroscopy. (Chemical Equation Presented).

Salt-Free Reduction of Nonprecious Transition-Metal Compounds: Generation of Amorphous Ni Nanoparticles for Catalytic C-C Bond Formation

A salt-free procedure for the generation of a wide variety of metal(0) particles, including Fe, Co, Ni, and Cu, was achieved using 2,3,5,6-tetramethyl-1,4-bis(trimethylsilyl)-1,4-diaza-2,5-cyclohexadiene (1), which reduced the corresponding metal precursors under mild conditions. Notably, Ni particles formed in situ from the treatment of Ni(acac)2 (acac=acetylacetonate) with 1 in toluene exhibited significant catalytic activity for reductive C-C bond-forming reactions of aryl halides in the presence of excess amounts of 1. By examination of high-magnification transmission electron microscopy images and electron diffraction patterns, we concluded that amorphous Ni nanoparticles (Ni aNPs) were essential for the high catalytic activity.