- Electronic structure of CeSe probed by resonant photoemission spectroscopy: A test case for the single-impurity Anderson Hamiltonian
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One of the most interesting problems, in the study of the electronic structure of Ce compounds, is the evaluation of the intrinsic linewidth of the atomiclike Ce 4f states in low Kondo temperature compositions. In this context, the case of CeSe is of particular interest, because of the energy location of the Ce 4f0 peak in a pseudogap formed mainly between the Se 4p and the Ce 5d density of states (DOS). This fact results experimentally in the most narrow Ce 4f0 final state so far reported (~280 meV), and represents at the same time an experimental upper limit for the lifetime broadening of this state in low Kondo temperature compounds, and extra information useful in the refinement of theoretical fitting of the data. We present single impurity Anderson Hamiltonian calculations which take advantage of the Ce 5d calculated local density approximation DOS to simulate the delocalized valence band continuum that mixes with the 4f impurity state. These calculations fit the experimental data and reproduce a certain degree of mixing between the Ce 4f and Se 4p states reasonably well.
- Chiaia,Duo,Tjernberg,Goethelid,Bjoerkqvist,Kumigashira,Yang,Takahashi,Suzuki,Lindau
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- Sb2Se3-CeSe and Bi2Se3-CeSe systems
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The Sb2Se3 (Bi2Se3)-CeSe systems, which are quasi-binary sections of ternary Ge-Sb(Bi)-Se systems, have been investigated by methods of physicochemical analysis. Ternary phases Ce 2Sb2Se5 and Ce2Bi2Se 5 are formed in the systems. The Ce2Sb2Se 5 compound crystallizes in the orthorhombic crystal system with the unit cell parameters a = 14.586 ?, b = 20.887 ?, c = 4.148 ?, Vc = 1263.72 ?3. The Ce2Bi 2Se5 compound crystallizes in the hexagonal crystal system with the unit cell parameters a = 4.20 ?, c =17.14 ?, Vc = 262.02 ?3. The CeSe solubility in Sb2Se 3 (Bi2Se3) at 300 K is ~3 and 5 mol %, respectively.
- Mamedova,Sadygov,Gasymov,Babanly
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p. 422 - 424
(2008/10/08)
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