13587-51-4

Basic information

• Product Name: [2H]silane
• Synonyms: Silane-d; (2H)Silane; deuteriosilicon
• CAS NO: 13587-51-4
• Molecular Formula: H₄Si
• Molecular Weight: 30.0996
• EINECS: 237-023-2
• Mol File: 13587-51-4.mol

Chemical Properties

• Vapor Pressure: 54300mmHg at 25°C
• CAS DataBase Reference: [2H]silane(CAS DataBase Reference)
• NIST Chemistry Reference: [2H]silane(13587-51-4)
• EPA Substance Registry System: [2H]silane(13587-51-4)

Safety Data

• Hazardous Substances Data: 13587-51-4(Hazardous Substances Data)

Usage

Uses

Used in Research and Industrial Applications:
[2H]silane is used as a source of deuterium for various chemical reactions, particularly in research and industrial applications. The heavy isotopic composition of [2H]silane allows for differences in the physical and chemical properties of compounds in which it is incorporated, making it useful for experimental and analytical purposes.
Used in the Production of Specialized Materials:
[2H]silane is used as a precursor for the production of specialized materials and chemicals, such as deuterated silicon compounds and semiconductors. The unique properties of deuterium-containing compounds make them valuable in various high-tech applications.
Used in Chemical Reactions:
[2H]silane is used as a reactant in chemical reactions where deuterium is required, allowing researchers to study the effects of isotopic substitution on reaction mechanisms and product properties.
Used in Analytical Techniques:
[2H]silane is used as a reference material or internal standard in analytical techniques, such as mass spectrometry and nuclear magnetic resonance (NMR) spectroscopy, to improve the accuracy and precision of measurements.

Upstream product

• 110015-57-1 ⁽²⁾H₃Si⁽¹⁺⁾ 
• 7440-21-3 monosilane 
• 130287-35-3 H⁽²⁾H₂Si⁽¹⁺⁾ 
• 130287-36-4 H₂⁽²⁾HSi⁽¹⁺⁾ 
• 41753-67-7 silanium cation 
• 111-43-3 Dipropyl ether 
• 1590-87-0 disilane 
• 16873-17-9 deuterium 
• 7440-21-3 silyl 
• 13537-07-0 silane-d4 
• 811-98-3 d⁽⁴⁾-methanol 
• 2679-89-2 bis-pentadeuterioethyl ether 
• 13598-42-0 iodosilane 

Relevant articles and documents

Gas-phase homolytic substitution reactions of hydrogen atoms at silicon centers

The reaction of H atoms with a number of mono-, di-, and trisilanes has been studied with the view of examining the possible occurrence of a homolytic substitution reaction (SH2). Arrhenius parameters for abstraction plus substitution have been determined for the reaction of H atoms with Si2H6, Me3SiSiMe2H, Me3SiSiCl3, Si2Cl6, and Me8Si3. The ratio of substitution vs. abstraction was determined. It is found that di- and trisilanes react fast by an SH2 reaction while monosilanes are unreactive. Ligands with a -I effect cause a decrease in reactivity. The experimental facts are explained by a frontside attack of the H atoms due to the favorable interaction of the singly occupied orbital at the H atom with the energetically high-lying Si-Si orbital.

Direct kinetic studies of SiH3 + SiH3, H, CCl4, SiD4, Si2H6, and C3H6 by tunable infrared diode laser spectroscopy

Gas phase reactions of silyl radical, SiH3, are investigated at room temperature using tunable diode laser flash kinetic spectroscopy.Photolytic generation of silyl at 193 and 248 nm is demonstrated using several different precursor systems.The silyl recombination reaction, SiH3 + SiH3 -> Si2H6, is studied by quantitative measurement of SiH3 and attendant product densities.Analysis yields a refinement of the rate constant, krc = (7.9 +/- 2.9) * 10-11 cm3 molecule-1 s-1.By modeling silyl densities following photolysis of HCl in SiH4, bimolecular rate constants for H + SiH3 and H + SiH4 are determined to be (2 +/- 1) * 10-11 and (2.5 +/- 0.5) * 10-13 cm3 molecule-1 s-1, respectively.Reactions of SiH3 with SiD4, Si2H6, CCl4, and C3H6 (propylene) are studied under pseudo-first-order conditions.Derived upper limits to the rate constants show these reactions to be slow at room temperature.The data demonstrate the reactivity of silyl with open-shell (radical) species and the general inertness of silyl toward closed shell molecules.Under typical chemical vapor deposition conditions, SiH3 is, therefore, a kinetically long-lived species in the gas phase and consequently a potentially important film forming species under plasma and photochemical deposition conditions.

H/D isotope exchange reaction of SiH3+ with SiD4 and SiD3+ with SiH4: Evidence for hydride stripping reaction

We have measured the reaction rates and product distributions for SiHxD3-x+ reactions with SiH4 and SiD4.The measured reaction rates for SiH3+ and SiD4 (26.1 +/- 1.0 x 10-10 cc/molecule s) and for SiD3+ and SiH4

Proton Affinity and Heat of Formation of Silylene

Using the techniques of Fourier transform ion cyclotron resonance spectroscopy, we determined the proton affinity of silylene to be 201 +/- 3 kcal*mol-1 from a study of the kinetics and thermochemistry of proton transfer from SiH3+ to a series of n-donor bases with well-established gas-phase base strengths.This value leads to ΔHfo298(SiH2) = 69 +/- 3 kcal*mol-1, which is 11 kcal*mol-1 higher than the previously accepted value (Wals, R.Acc.Chem.Res. 1981, 14, 246-252), but in excellent agreement with the recent theoretically recommended value of 68.1 kcal*mol-1 (Ho, P.; Coltrin, M.E.; Binkely, J.S.; Melius, C.F.J.Phys.Chem. 1985, 89, 4647-4654).