Welcome to LookChem.com Sign In|Join Free

CAS

  • or

1590-87-0

Post Buying Request

1590-87-0 Suppliers

Recommended suppliersmore

  • Product
  • FOB Price
  • Min.Order
  • Supply Ability
  • Supplier
  • Contact Supplier

1590-87-0 Usage

Chemical Properties

colourless gas with a foul odour

Uses

Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.1

Check Digit Verification of cas no

The CAS Registry Mumber 1590-87-0 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 1,5,9 and 0 respectively; the second part has 2 digits, 8 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 1590-87:
(6*1)+(5*5)+(4*9)+(3*0)+(2*8)+(1*7)=90
90 % 10 = 0
So 1590-87-0 is a valid CAS Registry Number.
InChI:InChI=1/H6Si2/c1-2/h1-2H3

1590-87-0SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 12, 2017

Revision Date: Aug 12, 2017

1.Identification

1.1 GHS Product identifier

Product name disilane

1.2 Other means of identification

Product number -
Other names λ<sup>1</sup>-silanylsilicon

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:1590-87-0 SDS

1590-87-0Downstream Products

1590-87-0Relevant articles and documents

VUV photoionization time-of-flight mass spectrometry of flash pyrolysis of silane and disilane

Chambreau, Steven D.,Zhang, Jingsong

, p. 482 - 488 (2001)

Flash pyrolysis of silane, SiH4, and disilane, Si2H6, diluted in He or Ar (1%), was carried out at temperatures ranging from ~700 to ~1500 K. After a short reaction time of ~20 μs, the initial products were isolated in a supersonic molecular beam and detected by single vacuum ultra-violet (VUV) photon (λ=118or121nm) ionization time-of-flight mass spectrometry (TOFMS). Initial decomposition and reaction products, both free radical intermediates and stable species, were directly observed, which included SiH2 and Si2H4.

Thermodynamics of the Si-O-N system: I. High-temperature study of the vaporization behavior of silicon nitride by mass spectrometry

Rocabois,Chatillon,Bernard

, p. 1351 - 1360 (1996)

Si3N4(s) powders are vaporized in effusion cells, and the gaseous phase, analyzed by mass spectrometry, is composed of N2, Si, Si2, Si3, SiN, and Si2N. Owing to retarding vaporization of N

Prototype Si-H Insertion Reaction of Silylene with Silane. Absolute Rate Constants, Temperature Dependence, RRKM Modelling and the Potential-energy Surface

Becerra, Rosa,Frey, H. Monty,Mason, Ben P.,Walsh, Robin,Gordon, Mark S.

, p. 2723 - 2732 (1995)

Time-resolved studies of silylene, SiH2, generated by laser flash photolysis of phenylsilane, have been carried out to obtain rate constants for its bimolecular reaction with monosilane, SiH4.The reaction was studied in the gas phase over the pressure ran

Infrared Multiphoton Decomposition of Monosilane

Longeway, P. A.,Lampe, F. W.

, p. 6813 - 6818 (1981)

The decomposition of SiH4 by infrared radiation from a pulsed CO2 TEA laser at 944.19 cm-1 has been studied in the pressure range of 10-22 torr and at a fluence of 1.0 J/cm2.The products observed are H2, Si2H6, Si3H8, Si4H10, Si5H12, and a solid (SiHx)n.The energy absorption from the laser beam increases with increasing pressure of SiH4 and/or of He, showing that collisions are necessary to pump molecules into the quasicontinuum from which resonant absorption of the laser photon occurs readily.The addition of He also increases the decomposition rate showing that the decomposition is a multiphoton decomposition and not a purely thermal reaction.The primary dissociation of SiH4 is to H2 and SiH2 and it is the further reactions initiated by attack of SiH2 on SiH4 that cause the observed decomposition.It is shown that the results are accounted for by a Boltzmann distribution of infrared photons in SiH4 and a reaction mechanism identical with that shown to obtain in the pyrolysis of SiH4.

Unusually selective synthesis of chlorohydrooligosilanes

Lainer, Thomas,Fischer, Roland,Leypold, Mario,Holthausen, Michael,Wunnicke, Odo,Haas, Michael,Stueger, Harald

supporting information, p. 13812 - 13815 (2020/11/18)

New pathways towards molecular chlorohydrooligosilanes enable their one-pot synthesis in preparative amounts either by the selective chlorination of the corresponding perhydrosilanes with HCl/AlCl3 or by the partial hydrogenation of perchlorooligosilanes

Matrix reactivity of Zn, Cd, or Hg atoms (M) in the presence of silane: Photogeneration and characterization of the insertion product HMSiH3 in a solid argon matrix

Macrae, Victoria A.,Greene, Tim M.,Downs, Anthony J.

, p. 1393 - 1402 (2007/10/03)

Matrix-isolation experiments give evidence that broad-band UV-vis irradiation (200 ≤ λ ≤ 800 nm) of an Ar matrix doped with SiH4 and a group 12 metal atom M (M = Zn, Cd, or Hg) induces metal insertion into an Si-H bond to give the silyl metal hydride molecule HMSiH3 as the primary product. Si2H6 is a second product, irrespective of the identity of M, while the binary hydride MH2 is also formed when M = Zn or Cd. The products have been identified by their IR spectra and experiments with SiD4, together with the results of quantum chemical calculations, have provided the means of authentication. The properties of the HMSiH3 molecules are compared with those of related species, and consideration is given to how the products come to be formed.

Post a RFQ

Enter 15 to 2000 letters.Word count: 0 letters

Attach files(File Format: Jpeg, Jpg, Gif, Png, PDF, PPT, Zip, Rar,Word or Excel Maximum File Size: 3MB)

1

What can I do for you?
Get Best Price

Get Best Price for 1590-87-0