1590-87-0

Basic information

• Product Name: DISILANE
• Synonyms: DISILANE;Si2H6;Silicoethane;DISILANE, 99.998%, ELECTRONIC GRADE;disilicoethane;DISILANE, 99.9+%
• CAS NO: 1590-87-0
• Molecular Formula: H6Si2
• Molecular Weight: 62.22
• EINECS: 216-466-5
• Product Categories: Chemical Synthesis;Compressed and Liquefied GasesVapor Deposition Precursors;Gases;Precursors by Metal;Synthetic Reagents;Chemical Synthesis;CVD and ALD Precursors by Metal;Materials Science;Micro/NanoElectronics;Specialty Gases;Synthetic Reagents;Vapor Deposition Precursors
• Mol File: 1590-87-0.mol
• Article Data: 29

Chemical Properties

• Melting Point: -132°C
• Boiling Point: -14,5°C
• Flash Point: <10°C
• Appearance: /colorless gas
• Density: 0,686 g/cm3
• Vapor Pressure: 2940mmHg at 25°C
• Water Solubility: soluble CS2, ethanol, benzene [MER06]
• Stability: Pyrophoric. Reacts violently with oxidizers and halogens. May form explosive mixtures with air.
• Merck: 13,3391
• CAS DataBase Reference: DISILANE(CAS DataBase Reference)
• NIST Chemistry Reference: DISILANE(1590-87-0)
• EPA Substance Registry System: DISILANE(1590-87-0)

Safety Data

• Hazard Codes: F,Xn
• Statements: 17-20/21-36/37/38-42
• Safety Statements: 16-24-26-36/37/39
• RIDADR: 2203
• WGK Germany: 3
• TSCA: No
• HazardClass: 2.1
• Hazardous Substances Data: 1590-87-0(Hazardous Substances Data)

Usage

Uses

Used in Semiconductor Industry:
Disilane is used as a precursor for the rapid, low-temperature deposition of epitaxial silicon and silicon-based dielectrics. This application is crucial in the manufacturing of semiconductor devices, as it allows for the formation of thin layers of silicon on substrates, which are essential components in the construction of transistors and other microelectronic devices.
Used in Chemical Vapor Deposition (CVD) Process:
In the CVD process, Disilane is used as a source of silicon for depositing silicon films on various substrates. This is important for creating thin-film solar cells, as well as for other applications in the electronics and optoelectronics industries.
Used in Research and Development:
Disilane is also utilized in research and development for the synthesis of new materials and the study of their properties. Its unique chemical properties make it a valuable compound for exploring new applications and understanding the behavior of silicon-based materials.

InChI:InChI=1/H6Si2/c1-2/h1-2H3

Upstream product

• 14868-53-2 n-pentasilane 
• 5851-08-1 hexaethoxydisilane 
• 1191-15-7 diisobutylaluminium hydride 
• 7440-21-3 monosilane 
• 7803-51-2 phosphan 
• 7647-01-0 hydrogenchloride 
• 102389-83-3 Phenylsilylene 
• 7782-50-5 chlorine 
• 22831-39-6 magnesium silicide 
• 7440-21-3 silicon 
• 13598-42-0 iodosilane 
• 7440-23-5 sodium 
• 135524-36-6 Nonafluorobutansulfonsaeure-silylester 
• 7440-09-7 potassium 

Downstream Products

• 73151-72-1 disilyl radical 

Relevant articles and documents

VUV photoionization time-of-flight mass spectrometry of flash pyrolysis of silane and disilane

Flash pyrolysis of silane, SiH4, and disilane, Si2H6, diluted in He or Ar (1%), was carried out at temperatures ranging from ~700 to ~1500 K. After a short reaction time of ~20 μs, the initial products were isolated in a supersonic molecular beam and detected by single vacuum ultra-violet (VUV) photon (λ=118or121nm) ionization time-of-flight mass spectrometry (TOFMS). Initial decomposition and reaction products, both free radical intermediates and stable species, were directly observed, which included SiH2 and Si2H4.

Thermodynamics of the Si-O-N system: I. High-temperature study of the vaporization behavior of silicon nitride by mass spectrometry

Si3N4(s) powders are vaporized in effusion cells, and the gaseous phase, analyzed by mass spectrometry, is composed of N2, Si, Si2, Si3, SiN, and Si2N. Owing to retarding vaporization of N

Absolute Rate Constants for the Gas-phase Reactions of Silylene with Silane, Disilane and the Methylsilanes

Absolute rate constants for reactions of silylene have been determined by time-resolved measurements of its decay at room temperature, following formation by pulsed-laser photolysis of phenylsilane in the presence of various added silanes.For SiH4 and Si2H6 the rate coefficients are pressure dependent and the former reaction is succesfully modelled using RRKM theory.High-pressure (or pressure-independent) rate constants (in 10-10 cm3 molecule-1 s-1) are: SiH4, ca. 4.0; Si2H6, ca. 6.5; MeSiH3, 3.66 +/- 0.22; Me2SiH2, 3.31 +/- 0.26; Me3SiH, 2.47 +/- 0.14.Theseresults are compared with other determinations and the rate constants for the analogous reactions of SiMe2.A model for the insertion reaction is proposed in which the nucleophilic stage of the process plays an important role.

Prototype Si-H Insertion Reaction of Silylene with Silane. Absolute Rate Constants, Temperature Dependence, RRKM Modelling and the Potential-energy Surface

Time-resolved studies of silylene, SiH2, generated by laser flash photolysis of phenylsilane, have been carried out to obtain rate constants for its bimolecular reaction with monosilane, SiH4.The reaction was studied in the gas phase over the pressure ran

Photochemical Synthesis of Disilane from Silane with Infrared Laser Radiation

We report the clean and efficient conversion of silane to disilane by CO2 laser irradiation.The direct irradiation of pure silane at high pressures (from 75 1700 Torr) converts silane to disilane with high selectivity and with efficient use of the absorbe

Infrared Multiphoton Decomposition of Monosilane

The decomposition of SiH4 by infrared radiation from a pulsed CO2 TEA laser at 944.19 cm-1 has been studied in the pressure range of 10-22 torr and at a fluence of 1.0 J/cm2.The products observed are H2, Si2H6, Si3H8, Si4H10, Si5H12, and a solid (SiHx)n.The energy absorption from the laser beam increases with increasing pressure of SiH4 and/or of He, showing that collisions are necessary to pump molecules into the quasicontinuum from which resonant absorption of the laser photon occurs readily.The addition of He also increases the decomposition rate showing that the decomposition is a multiphoton decomposition and not a purely thermal reaction.The primary dissociation of SiH4 is to H2 and SiH2 and it is the further reactions initiated by attack of SiH2 on SiH4 that cause the observed decomposition.It is shown that the results are accounted for by a Boltzmann distribution of infrared photons in SiH4 and a reaction mechanism identical with that shown to obtain in the pyrolysis of SiH4.

Infrared Spectra and ab Initio Calculations of Disilane and Methylsilane Complexes with HF in Solid Argon

HF complexes with disilane and four methylsilanes were prepared in argon matrices and studied by use of infrared spectroscopy and ab initio calculations.The spectrum of the disilane- -HF complex was very similar to the silane- -HF complex reported previou

Unusually selective synthesis of chlorohydrooligosilanes

New pathways towards molecular chlorohydrooligosilanes enable their one-pot synthesis in preparative amounts either by the selective chlorination of the corresponding perhydrosilanes with HCl/AlCl3 or by the partial hydrogenation of perchlorooligosilanes

Method for preparing hydrogen silane by using calcium hydride to conduct reduction on chlorosilane

The invention discloses a method for preparing hydrogen silane by using calcium hydride to conduct reduction on chlorosilane and belongs to the technical field of chlorosilane reduction. The problemsof harsh reaction conditions, low reaction speed and the like of chlorosilane reduction through CaH2 in the prior art are solved. In an organic solvent, under catalysis of a catalyst, calcium hydrideis used as a reducing agent, and chlorosilane is reduced into hydrogen silane; the catalyst is borane or borohydride or lithium aluminum hydride, and the organic solvent is tetrahydrofuran or diethylene glycol dimethyl ether or other ether solvents. The method can be applied to hydrogen silane preparation through chlorosilane reduction.

Matrix reactivity of Zn, Cd, or Hg atoms (M) in the presence of silane: Photogeneration and characterization of the insertion product HMSiH3 in a solid argon matrix

Matrix-isolation experiments give evidence that broad-band UV-vis irradiation (200 ≤ λ ≤ 800 nm) of an Ar matrix doped with SiH4 and a group 12 metal atom M (M = Zn, Cd, or Hg) induces metal insertion into an Si-H bond to give the silyl metal hydride molecule HMSiH3 as the primary product. Si2H6 is a second product, irrespective of the identity of M, while the binary hydride MH2 is also formed when M = Zn or Cd. The products have been identified by their IR spectra and experiments with SiD4, together with the results of quantum chemical calculations, have provided the means of authentication. The properties of the HMSiH3 molecules are compared with those of related species, and consideration is given to how the products come to be formed.