13598-42-0

Basic information

• Product Name: Iodosilane
• Synonyms: Iodosilane
• CAS NO: 13598-42-0
• Molecular Formula: H₃ISi
• Molecular Weight: 158.01
• Mol File: 13598-42-0.mol

Chemical Properties

• Melting Point: -57°C
• Boiling Point: 45.4°C (estimate)
• Flash Point: °C
• Appearance: /colorless liquid
• Density: 2.031 (estimate)
• Vapor Pressure: 361mmHg at 25°C
• CAS DataBase Reference: Iodosilane(CAS DataBase Reference)
• NIST Chemistry Reference: Iodosilane(13598-42-0)
• EPA Substance Registry System: Iodosilane(13598-42-0)

Safety Data

• Hazardous Substances Data: 13598-42-0(Hazardous Substances Data)

Usage

Uses

Used in Semiconductor Industry:
Iodosilane is used as a precursor in the semiconductor industry for the deposition of thin films of silicon. Its reactivity allows for the formation of high-quality silicon layers on various substrates, which are essential for the fabrication of electronic devices.
Used in Chemical Vapor Deposition (CVD):
Iodosilane is used as a source material in the Chemical Vapor Deposition process for producing silicon-based materials. The process involves the reaction of Iodosilane with other gases at high temperatures, resulting in the formation of silicon layers with specific properties tailored for various applications.
Used in Photovoltaic Industry:
Iodosilane is used as a source material in the photovoltaic industry for the production of silicon solar cells. The high purity and reactivity of Iodosilane enable the creation of efficient and high-performance solar cells by depositing thin layers of silicon onto substrates.
Used in Research and Development:
Iodosilane is used as a research compound in various scientific studies and experiments. Its unique chemical properties make it an interesting subject for research in the fields of materials science, chemistry, and physics.
Used in Analytical Chemistry:
Iodosilane can be used as a reagent in analytical chemistry for the detection and quantification of specific elements or compounds. Its reactivity with certain substances allows for the development of sensitive and selective analytical methods.

InChI:InChI=1/H3ISi/c1-2/h2H3

Upstream product

• 16544-95-9 disilthiane 
• 753-94-6 trifluoro methyl silyl sulfide 
• 10034-85-2 hydrogen iodide 
• 7440-21-3 monosilane 
• 13517-10-7 boron triiodide 
• 694-53-1 phenylsilane 
• 56-23-5 tetrachloromethane 
• 7440-21-3 silyl 

Downstream Products

• 7440-21-3 monosilane 
• 14939-45-8 disilyl selenide 
• 75-13-8 isocyanic acid 
• 3410-77-3 tetraisocyanatosilane 
• 7440-22-4 silver 
• 128166-50-7 P(SiH₃)I₂ 
• 15110-33-5 trisilylphosphine 
• 128166-52-9 iododisilylphosphine 
• 13455-01-1 phosphorous triiodide 
• 13760-02-6 diiodosilane 
• 11128-24-8 fluorosilane 
• 371-71-1 Perfluoro-2-azapropen 
• 51042-07-0 bis(trifluoromethyl)aminosilane 
• 13587-51-4 silane 

Relevant articles and documents

Infrared and mass spectroscopic study of the reaction of silyl iodide and ammonia. Infrared spectrum of silylamine

The reaction of silyl iodide and ammonia has been studied under slowly flowing conditions using FTIR spectroscopy and mass spectroscopy. At low (0.01 mbar) partial pressures of silyl iodide in excess ammonia, monosilylamine, a long postulated intermediate in the synthesis of trisilylamine from halosilanes and ammonia, was the only silylamine observed by mass spectroscopy and infrared spectroscopy. At a silyl iodide pressure of 0.1 mbar (necessary to obtain a high signal-to-noise infrared spectrum of silylamine) a significant amount (～ 10%) of disilylamine was observed by both infrared and mass spectroscopies, demonstrating that both monosilylamine and disilylamine intermediates are produced in the gas phase. Trisilylamine was not observed as a product of the gas-phase reaction of silyl iodide and ammonia under the low-pressure conditions studied. By study of the reaction of deuterated silyl iodide and ammonia and the reaction of silyl iodide with deuterated ammonia, it was determined that the hydrogen lost in the formation of hydrogen iodide originates from the ammonia molecule. The infrared spectra of SiH3NH2, SiH3ND2, SiD3NH2, and SiD3ND2 are reported.

Direct kinetic studies of SiH3 + SiH3, H, CCl4, SiD4, Si2H6, and C3H6 by tunable infrared diode laser spectroscopy

Gas phase reactions of silyl radical, SiH3, are investigated at room temperature using tunable diode laser flash kinetic spectroscopy.Photolytic generation of silyl at 193 and 248 nm is demonstrated using several different precursor systems.The silyl recombination reaction, SiH3 + SiH3 -> Si2H6, is studied by quantitative measurement of SiH3 and attendant product densities.Analysis yields a refinement of the rate constant, krc = (7.9 +/- 2.9) * 10-11 cm3 molecule-1 s-1.By modeling silyl densities following photolysis of HCl in SiH4, bimolecular rate constants for H + SiH3 and H + SiH4 are determined to be (2 +/- 1) * 10-11 and (2.5 +/- 0.5) * 10-13 cm3 molecule-1 s-1, respectively.Reactions of SiH3 with SiD4, Si2H6, CCl4, and C3H6 (propylene) are studied under pseudo-first-order conditions.Derived upper limits to the rate constants show these reactions to be slow at room temperature.The data demonstrate the reactivity of silyl with open-shell (radical) species and the general inertness of silyl toward closed shell molecules.Under typical chemical vapor deposition conditions, SiH3 is, therefore, a kinetically long-lived species in the gas phase and consequently a potentially important film forming species under plasma and photochemical deposition conditions.