18159-55-2

Basic information

• Product Name: TRI-T-BUTYLSILANE
• Synonyms: TRI-T-BUTYLSILANE;TRI-TERT-BUTYLSILANE
• CAS NO: 18159-55-2
• Molecular Formula: C₁₂H₂₈Si
• Molecular Weight: 200.44
• Mol File: 18159-55-2.mol

Chemical Properties

• Melting Point: 33-44°C
• Boiling Point: 142-6°C 100mm
• Flash Point: >65°C
• Appearance: /
• Vapor Pressure: 0.376mmHg at 25°C
• Storage Temp.: 2-8°C
• CAS DataBase Reference: TRI-T-BUTYLSILANE(CAS DataBase Reference)
• NIST Chemistry Reference: TRI-T-BUTYLSILANE(18159-55-2)
• EPA Substance Registry System: TRI-T-BUTYLSILANE(18159-55-2)

Safety Data

• Statements: 36/37/38
• Safety Statements: 26-36/37/39
• TSCA: No
• Hazardous Substances Data: 18159-55-2(Hazardous Substances Data)

Usage

Uses

Used in Organic Synthesis:
TRI-T-BUTYLSILANE is used as a reducing agent for various organic synthesis reactions, facilitating the conversion of functional groups and improving the efficiency of the synthesis process.
Used in Silicon Incorporation:
TRI-T-BUTYLSILANE is used as a precursor for the introduction of silicon into organic molecules, enabling the synthesis of organosilicon compounds with unique properties and applications.
Used in Protective Group Chemistry:
TRI-T-BUTYLSILANE is used as a protective group for alcohols, allowing selective reactions to occur at other functional groups while preventing unwanted side reactions at the alcohol moiety.
Used in Silyl Ether Deprotection:
TRI-T-BUTYLSILANE is used as a reagent for the deprotection of silyl ethers, enabling the selective removal of silyl protecting groups under mild conditions.
Used in Silicon-Based Material Production:
TRI-T-BUTYLSILANE is used in the production of silicon-based materials, such as ceramics, glasses, and polymers, due to its ability to incorporate silicon into various structures.
Used in Electronics and High-Technology Manufacturing:
TRI-T-BUTYLSILANE is used as a component in the manufacture of electronic devices and other high-technology products, such as semiconductors, solar cells, and sensors, owing to its role in creating silicon-based materials with specific electronic properties.
Used in Chemical Research:
TRI-T-BUTYLSILANE is used in chemical research for the development of new synthetic methods, the study of organosilicon compounds, and the exploration of its potential applications in various fields.

InChI:InChI=1/C12H28Si/c1-10(2,3)13(11(4,5)6)12(7,8)9/h13H,1-9H3

Upstream product

• 18171-74-9 tert-butyltrichlorosilane 
• 594-19-4 tert.-butyl lithium 
• 56310-21-5 di-tert-butylmethoxysilane 
• 558-63-4 di-tert-butyldifluorosilane 
• 59409-86-8 1,1,2,2-tetra-tert-butyldisilane 
• 56348-23-3 di-tert-butylfluorosilane 
• 56348-26-6 tBu₃SiI 
• 103349-41-3 sodium tri-tert-butylsilanide 
• 617-86-7 triethylsilane 
• 283163-01-9 Chlorphenylsupersilylsilan 
• 283162-97-0 1,1,1,3,3,3-hexa-tert-butyltrisilane 
• 366006-72-6 3-phenyl-1-tri-tert-butylsilyl-1-triisopropylsilyl-1-silacyclopent-3-ene 
• 109-99-9 tetrahydrofuran 
• 56348-25-5 supersilyl bromide 

Downstream Products

• 13321-36-3 di-tert-butylsilanediol 
• 56889-92-0 4-Methylcyclohexyl tri-t.butylsilylether 
• 56889-86-2 cis-4-t-Butylcyclohexyl-tri-t.butylsilylether 
• 56889-90-8 tri-tert-butylsilanol 
• 115-11-7 isobutene 
• 18162-48-6 tert-butyldimethylsilyl chloride 
• 74605-31-5 Tri-tert-butyl-phenyl-silane 
• 7446-09-5 sulfur dioxide 

Relevant articles and documents

Silylene R*XSi (R=SitBu3; X=H, Me, Ph, Hal, R*): Bildung und Reaktionen

Thermolyses of disupersilylsilanes R*2SiX2 (R=supersilyl=SitBu3; X=H, Hal or H together with Me, Ph, Br) at about 160°C lead - besides R*X (R*H preferred to R*Br) - to silylenes R*XSi (X=H, Me, Ph, Br), the inte

29Si NMR Spectroscopy as a Probe of s- And f-Block Metal(II)-Silanide Bond Covalency

We report the use of 29Si NMR spectroscopy and DFT calculations combined to benchmark the covalency in the chemical bonding of s- and f-block metal-silicon bonds. The complexes [M(SitBu3)2(THF)2(THF)x] (1-M: M = Mg, Ca, Yb, x = 0; M = Sm, Eu, x = 1) and [M(SitBu2Me)2(THF)2(THF)x] (2-M: M = Mg, x = 0; M = Ca, Sm, Eu, Yb, x = 1) have been synthesized and characterized. DFT calculations and 29Si NMR spectroscopic analyses of 1-M and 2-M (M = Mg, Ca, Yb, No, the last in silico due to experimental unavailability) together with known {Si(SiMe3)3}-, {Si(SiMe2H)3}-, and {SiPh3}-substituted analogues provide 20 representative examples spanning five silanide ligands and four divalent metals, revealing that the metal-bound 29Si NMR isotropic chemical shifts, ?Si, span a wide (?225 ppm) range when the metal is kept constant, and direct, linear correlations are found between ?Si and computed delocalization indices and quantum chemical topology interatomic exchange-correlation energies that are measures of bond covalency. The calculations reveal dominant s- and d-orbital character in the bonding of these silanide complexes, with no significant f-orbital contributions. The ?Si is determined, relatively, by paramagnetic shielding for a given metal when the silanide is varied but by the spin-orbit shielding term when the metal is varied for a given ligand. The calculations suggest a covalency ordering of No(II) > Yb(II) > Ca(II) ≈ Mg(II), challenging the traditional view of late actinide chemical bonding being equivalent to that of the late lanthanides.

Isoelectronic caesium compounds: The triphosphenide Cs[tBu 3SiPPPSitBu3] and the enolate Cs[OCH=CH2]

The caesium triphosphenide Cs[tBu3SiPPPSitBu3] was accessible from the reaction of CsF with the sodium triphosphenide Na[tBu 3SiPPPSitBu3] in tetrahydrofuran at room temperature. In contrast to the preparation of tetrahydrofuran-solvated silanides M[SitBu 3] (M = Li, Na, K), our efforts to synthesize the caesium silanide Cs[SitBu3] as a tetrahydrofuran complex failed. When tBu 3SiBr was treated with an excess of caesium metal in tetrahydrofuran at room temperature, the caesium enolate Cs[OCH=CH2] and the supersilane tBu3SiH formed rather than the silanide Cs[SitBu 3]. X-Ray quality crystals of the enolate Cs[OCH=CH2] (orthorhombic, Pnma) were obtained from tetrahydrofuran at ambient temperature. In contrast to the structures of its homologues M[tBu3SiPPPSitBu 3] (M = Na, K), the caesium triphosphenide Cs[tBu 3SiPPPSitBu3] features a polymer in the solid state (orthorhombic, Cmcm). The Royal Society of Chemistry.

Octagallane (tBu3Si)6Ga8 and its reduction to (tBu3Si)6Ga82- - On the existence of isomeric gallium clusters

Thermolysis of the trigallanyl radical R*4Ga3 in heptane at 60 °C leads to the dark blue octagallane R*6Ga8 (R* = supersilyl SitBu3), as well as the digallanyl radical R*3Ga2 and the tetrahedro-tetragallane R*4Ga4. In addition, supersilyl radicals R* are formed which stabilize themselves either by dimerization or by addition of hydrogen atoms. R*6Ga8 can be reduced in THF with NaC10H8 to the dark-red octagallanediide Na2Ga8R*6·2THF. According to an X-ray structure analysis of R*6Ga8 and R*6Ga82- one finds that the Ga atoms of four R*Ga moieties, together with two naked Ga atoms, occupy the corners of a distorted octahedron; the naked Ga atoms themselves are located, along with Ga atoms of two further R*Ga moieties, at the corners of a distorted square. The reduction of R*6Ga8 leads only to a negligible shortening of the Ga-Ga distances from 2.64 to 2.61 A (mean values) in R*6Ga82-. Both the octagallanes possess Ga8 frameworks previously unknown for group 13 clusters. They are isomeric to the recently described Ga8 framework of the octagallane Tsi6Ga8 [Tsi = trisyl C(SiMe3)3]. Hence, not only boron but also the heavier group 13 atoms form isomeric clusters.

Supersilylsilanes R*SiX3: Syntheses, characterization and structures; steric and van-der-Waals effects of substituents X [1]

Supersilylsilanes R*SiX3 (R* = supersilyl = SitBu3; X = H, Me, tBu, Ph, SiMe3, F, Cl, Br, I, OMe, OSO2CF3) are prepared (i) by reactions of supersilylhalosilanes with supersilyl sodium NaR* (Hal/R* ex

Donoraddukte des Silanimins Me2Si=NSitBu3: Darstellung, Stabilitaet, Reaktivitaet

Silaneimine Me2Si=NSitBu3 (1), which is unstable under normal conditions with regard to dimerization, forms metastable adducts D.Me2Si=NSitBu3 (1.D = 3 with D = Et2O, THF, NEt3, NMe2Et), which can be decomposed thermally to give 1 and D and, can thus serve as sources of 1.Adducts 1.D result from Me2SiXNLi(SitBu3) (X = halogen, amides formed by reaction of Me2SiXNH(SitBu3) with RLi) under LiX elimination in the presence of D and CF3SO3SiMe3.Lewis basicity of D, relative to 1, increases in the order Et2O - -.Similarly resistance of 1.D to decompose into the dimer of 1 and D also increases.Adducts 1.D also decompose by action of excess donor, (viz. 1.OEt2 decomposes in Et2O into ethylene and Me2SiOEt-NHSitBu3, 1.NMe2Et decomposes in NMe2Et under Stevens migration into EtMeNCH2SiMe2NHSitBu3).Reaction of adducts 1.D with water, alcohols and amines, or with organic enes (propene, isobutene, dimethylbutadiene, cyclopentadiene), or with silyl azides (MentBu3-nSiN3), or with benzophenone, respectively, gives the OH and NH bond insertion products, or ene reaction products, or cycloadducts, or a cycloadduct of 1, respectively.