14683-12-6

Basic information

• Product Name: Tellurium-131
• Synonyms: Tellurium-131
• CAS NO: 14683-12-6
• Molecular Formula: Te
• Molecular Weight: 131.636
• Mol File: 14683-12-6.mol
• Article Data: 115

Chemical Properties

• Boiling Point: °Cat760mmHg
• Flash Point: °C
• Appearance: /
• Density: g/cm³
• CAS DataBase Reference: Tellurium-131(CAS DataBase Reference)
• NIST Chemistry Reference: Tellurium-131(14683-12-6)
• EPA Substance Registry System: Tellurium-131(14683-12-6)

Safety Data

• Hazardous Substances Data: 14683-12-6(Hazardous Substances Data)

Usage

InChI:InChI=1/Te/i1+3

Upstream product

• 22541-48-6 selenide 
• 15852-22-9 tellurite^(2-) 
• 12034-41-2 disodium telluride 
• 10031-27-3 tellurium(IV) tetrabromide 
• 7446-07-3 tellurium(IV) oxide 
• 7439-92-1 lead 
• 7440-43-9 cadmium 
• 7704-34-9 sulfur 
• 7719-12-2 phosphorus trichloride 
• 7446-08-4 selenium(IV) oxide 

Downstream Products

• 20334-43-4 dimethyl ditelluride 
• 13494-80-9 hydrogen telluride 
• 16065-83-1 chromium (III) ion 
• 10049-23-7 tellurous acid 
• 7803-68-1 orthotelluric acid 
• 7790-48-9 tellurium(IV) iodide 
• 13940-36-8 tellurium monohydride 
• 12600-42-9 tellurium iodide 
• 7446-07-3 tellurium(IV) oxide 
• 10031-27-3 tellurium(IV) tetrabromide 
• 27918-70-3 tellurium bromide 
• 5582-50-3 Bis-triethylstannyl-tellur 
• 12034-41-2 disodium telluride 
• 10340-06-4 Thiocarbonyltellurid 

Relevant articles and documents

Mechanism of film growth of tellurium by electrochemical deposition in the presence and absence of cadmium ions

The growth morphology and the kinetics of a thin film of Te on Au during electrochemical deposition at -62 mV (vs Ag/AgCl/3 M NaCl) have been studied. The deposition conditions are similar to those used previously by us to grow nanowires inside Au nanotubes by electrochemical deposition in the presence of Cd ions (Cd2+). By using electrochemical deposition on a planar Au electrode, we explored the growth of the Te film for two conditions: in the presence of Cd2+ (0.1 mM TeO2 + 1 mM CdSO4 + 50 mM H2SO4 solution) and in the absence of Cd2+ (0.1 mM TeO2 + 50 mM H2SO4 solution). We used several surface investigation techniques to study the growth such as: in situ electrochemical atomic force microscopy (EC-AFM), in situ electrochemical surface plasmon resonance (EC-SPR), electrochemical methods, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). In the presence of Cd2+, in situ electrochemical atomic microscopy showed that Cd 2+ acted as a mediator at the early deposition stage and caused smoothing of the Te deposit obtained. In the absence of Cd2+, Te had an island growth. The electrochemical surface plasmon resonance showed that the deposit was characterized by a slower deposition rate in the presence of Cd 2+ than in the absence of Cd2+. Additionally, the thickness of the film was evaluated using EC-AFM measurements, electrochemical stripping analysis, and EC-SPR. The results obtained from all three measurements agree well with the Te film obtained in the presence of Cd2+, where a continuous and uniform film was formed. In the presence of Cd2+, a Te film with a thickness of 1.04 nm and atomically flat surface was deposited on an ultraflat Au surface. The XPS spectrum showed no significant amount of Cd in the deposit, indicating that the Cd ion acted as a mediator and not as a co-deposition element.

Microwave-polythiol Method. A New Route to Preparation of Tellurium with Various Morphologies

A new microwave-polythiol method has been developed for preparation of tellurium (Te) with various morphologies. 1,2-Ethanedithiol (EDT) was used as both a reducing reagent and a solvent. Reduction of TeO2 by EDT was achieved by microwave-heating at ≤140°C for 30 min. The morphology of Te could be controlled by changing experimental parameters.

Synthesis and Crystal Structure of Tellurium(II) bis(2- methoxycarbonylethanethiolate): A Novel Coordination Mode of Tellurium

The tellurium(II) dithiolates Te[SCH2CH2C(O)OCH3] 2, (1), Te[SCH2CH2CH2SC(O)CH 3]2, (2), and Te[SCH2CH2CH 2CH2- SC(O)CH3]2, (3) were synthesized from Te(StBu)2 and the corresponding thiol. All compounds are sensitive toward higher temperatures and light and decompose to elemental tellurium and the disulfide. In the solid state, the Te atom of 1 exhibits the novel Te(S2Te2) coordination mode. Additionally to the two Te-S bonds, each Te atom forms two long Te...Te contacts to neighboring mol-ecules, leading to a coordination number of four and a distorted sawhorse configuration. No intramolecular Te...O interactions are present in the solid state, in accordance with ab initio calculations (MP2/ecp-basis) for the isolated molecule. 125Te NMR shifts of all compounds lay within a narrow range and close to the respective shift of other Te(SCH2R)2 compounds. VT 125Te NMR spectra gave no hint to donor acceptor interactions in solution for any of the compounds and thus corroborate results from IR-spectroscopy, ab initio geometry optimizations, and thermochemical calculations.

Simple synthesis of ultra-long Ag2Te nanowires through solvothermal co-reduction method

Ultra-long single crystal β-Ag2Te nanowires with the diameter of about 300 nm were fabricated through a solvothermal route in ethylene glycol (EG) system without any template. The long single crystal wires were curves, with high purity, well-crystallized, and dislocation-free and characterized by using X-ray powder diffraction (XRD), Differential scanning calorimetry (DSC) analysis, X-ray photoelectron spectroscope (XPS), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and high-resolution transmission microscopy (HRTEM). The detailed topotactic transformation process from particles into single crystal wires was studied. Furthermore, the electrical conductivity and Seebeck coefficient have been systematically studied between 300 and 600 K.

Structural changes of amorphous GeTe2 films by annealing (Formation of metastable crystalline GeTe2 films)

Amorphous GeTe2 films with the thickness ～0.5 μm, prepared by sputtering technique, transform into the crystalline GeTe 2 films with the isomorphic structure to β-cristobalite, cubic SiO2, at Ta(annealing temper

Large scale synthesis of tellurium nanoribbons in tetraethylene pentamine aqueous solution and the stability of tellurium nanoribbons in ethanol and water

Superlong single crystal tellurium nanoribbons with a width of 200-300 nm and length up to several-hundred micrometers have been synthesized in tetraethylene pentamine aqueous solution at 80°C. The stability of as prepared tellurium nanoribbons in solvents such as pure ethanol and deionized water has been studied. The poor crytallinity of the initial single crystalline Te nanoribbons with prolonged storing time demonstrated that the initial single crystalline nanobelts tend to be destroyed and to dissolve in the solvent. In meantime, the supersaturation of the solvable Te species in such solvents will result in the formation of amorphous Te, and the formation of amorphous TeO 2 due to partial oxidation of the Te nanostructures and the newly formed amorphous Te. The detailed corrosion process, crystallinity, and shape evolution process have been carefully examined by the XRD, TEM, HRTEM, and XPS techniques. This erosion phenomenon attacked by solvents has been not identified previously, suggesting that tellurium nanoribbons synthesized by other chemical methods could be also not stable in solution system and their storage after laboratory synthesis requires special attention.

In-Situ STM of Te UPD Layers on Low Index Planes of Gold

The structure of well-ordered atomic layers of underpotentially deposited (UPD) tellurium on Au(110), Au-(100) and Au(111) was studied by in-situ scanning tunneling microscopy (STM).A series of largely commensurate structures is observed, with a close correspondence between coverages obtained from the STM images and the cyclic voltammetry assuming complete discharge of Te(4+) during adsorption.A linear dependence of the UPD peak current and the peak potential with the square root of the scan rate is observed indicating that the adsorption phase transition is associated with a two-dimensional, instantaneous nucleation process .The same structures are observed in sulfuric acid and perchloric acid supporting electrolyte.The first UPD structure formed on Au(111) corresponds to a pseudohexagonal packing of Te (0.42 ML) (ML = monolayer) in a single domain superlattice structure with missing atom defects.The superlattice cell is (3 x 3)R19 deg with respect to the constituent Te atom hexagonal cell and is consistent with the (12 x 12) structure on Au(111) reported previously.The second UPD structure on Au(111) is a pseudo-morphic (1 x 1).The Te-substrate interaction favos site specific adsorption, and dipolar repulsion within low-coverage layers is responsible for the open packing.

Underpotential deposition of Te monolayers on Au surfaces from perchloric acid solution studied by chronocoulometry and EQCM

We report a study of the underpotential deposition (UPD) of Te monolayers onto Au electrodes from perchloric acid solution using electrochemical quartz microgravimetry (EQCM) and chronocoulometry. We find that tellurium(IV) oxide (as TeO32

Synthesis, structure and selective chlorination of bis(N-borane- dimethylaminopropyl)telluride

The reaction of Te powder, NaBH4 and Me2N(CH 2)3Cl·HCl provided the title compound [H 3BNMe2-(CH2)3]2Te (1), whose selective chlorination with SO2/sub

Electrodeposition of ZnTe Film with High Current Efficiency at Low Overpotential from a Citric Acid Bath

The cathodic electrodeposition of ZnTe film was studied using an aqueous citric acid bath (pH 4; temperature 368 K) in which Zn(II) and Te(IV) species were dissolved to form Zn(Cit)24- and HTeO 2+ ions, respectively. The deposition mechanism was studied based on cyclic voltammetry. The influence of the deposition potential on the morphology, composition, and structure of the deposited film was also investigated. A smooth, dense polycrystalline ZnTe film with nearly stoichiometric composition was deposited at a constant cathode potential, ranging from -0.80 to -0.60 V vs. Ag/AgCl, from a solution containing 20 mmol dm-3 Zn(II), 0.16 mmol dm-3 Te(IV), 0.25 mol dm -3 H3Cit, and 0.25 mol dm-3 Na3Cit (Cit = C6H5O7). Potentials in this range provided the deposited ZnTe film with high current efficiency (above 98%). During electrodeposition of the nearly stoichiometric crystalline ZnTe, the current density was approximately stationary.

One-step fabrication of selenium and tellurium tubular structures

Single-crystal Se and Te tubular structures have been synthesized in one step by a hydrothermal method and characterized by means of X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). The hollow prismatic morphology of the tubular structures has been revealed and explained based on the nucleation and growth mechanism of the highly anisotropic crystal structures of Se and Te.

Lanthanide oxochalcogenido clusters

Lanthanide chalcogenolates react with either TeO2 in pyridine or py-SO3 in THF to give oxychalcogenido clusters. The sulfido derivatives (THF)8Ln8S2O2(SePh) 16 (Ln = Ce, Nd) are isostructural with previously reported oxoselenido compounds, and must be prepared at low temperatures to avoid the introduction of Se into the sulfide position. Analogous telluride derivatives for the early lanthanides were not obtained, but reactions of in situ prepared Ln(TePh)3 with elemental Te and TeO2 gave a complicated heterocluster product, with tetrametallic polytelluride [(py)7Ln 4(μ4-Te)(μ2-Te2) 2(μ-η2-η2-Te2Te(Ph) Te2)(TePh)] co-crystallizing with the oxotellurido compound [(py)5Ln3(μ3-O)(μ2-Te 2)3(TePh)] (Ln = Ho, Er). An analysis of the thermal decomposition of these compounds did not identify the oxo-containing products, with the sulfide compounds decomposing to give only Ln3Se4 and the telluride compounds forming crystalline LnTe and Te metal. The Royal Society of Chemistry 2010.

Diversity in photoredox chemistry of oxo or hydroxo complexes of S2 metal ions

The electronic spectra of hydroxo or oxo complexes of the s2 metal ions Tl+, Sn2+, Sb3+, Bi3+ and Te4+ in alkaline solutions display absorption bands in the UV region which are assigned to metal-centered sp transitions. In the case of Tl+ and Sn2+ these sp-excited states are also luminescent. TlOH is photooxidized to Tl2O3 by molecular oxygen while the photooxidation of Sn(OH)3- to Sn(OH)62- is even achieved by water which is reduced to hydrogen. Both complexes produce hydrated electrons upon 266 nm laser excitation. No electron ejection can be observed for the hydroxo or oxo metalates of Sb3+, B3+ and Te4+, which undergo a photoreduction to the metallic state with a concomitant oxidation of hydroxide to hydrogen peroxide and/or oxygen.

Synthesis of tellurium nanotubes by galvanic displacement

Tellurium nanotubes with controlled diameter and wall thickness were synthesized by galvanic displacement of cobalt nanowires and their temperature dependent field effect transistor and magnetoresistance properties were systematically investigated. The nanotube diameter was slightly larger than the sacrificial cobalt nanowire diameter with a wall thickness of range from 15 to 30 nm depending on the diameter of cobalt nanowires. Te nanotubes show p-type semiconducting property with the field effect carrier mobility of approx. 0.01 cm2/V s which is relatively lower than other 1D nanostructure. Low mobility might be attributed to porous morphology with small grain size (a Conwell-Weisskopf relationship to temperatures below 250 K, indicating that the dominant scattering sites are ionized impurity centers. Unique MR behavior was observed from nanotube with a maximum magnetoresistance ratio of 37% at 260 K.

The dehydration of SrTeO3(H2O) - A topotactic reaction for preparation of the new metastable strontium oxotellurate(IV) phase ε-SrTeO3

Microcrystalline single-phase strontium oxotellurate(IV) monohydrate, SrTeO3(H2O), was obtained by microwave-assisted hydrothermal synthesis under alkaline conditions at 180 °C for 30 min. A temperature of 220 °C and longer reaction

Preparation of high-purity TeO2-ZnO glass batches

Tellurium oxide-zinc oxide glass batches have been prepared through chemical vapor deposition from tellurium and zinc alkyl compounds in an oxyhydrogen flame onto the lateral surface of rotating cylindrical substrates. The composition of the deposits has

Electrodeposition of bismuth telluride films from a nonaqueous solvent

The author examines Bi2Te3 deposition from a DMSO solution containing TeCl4 and Bi(NO3)3 × 5H2O by means of cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM). Accumu

Rod-like Te as excellent microwave absorber: a new exploration

In this study, we report a facile method to prepare rod-like Te material, which can be used as a novel microwave absorber. Diameter of the Te rods can be tuned in the range of 46–51 nm by changing the reaction time. With the increase of Te particle diameter in the composites, the microwave absorbing property gets worse. As for the Te-0.5 sample with diameter of 45.7 nm, a maximum reflection loss value of ?53.8 dB at 16.0 GHz and an effective absorption bandwidth (4.8 GHz) ranging from 13.2 to 18 GHz at the thickness of only 1.55 mm can be achieved. To the best of our knowledge, it is the first time to investigate the microwave response of Te rods. These rods show obvious potential for lightweight, highly efficient microwave absorption in high frequency.

Synthesis, structures, and multinuclear NMR spectra of tin(II) and lead(II) complexes of tellurium-containing imidodiphosphinate ligands: Preparation of two morphologies of phase-pure PbTe from a single-source precursor

Group 14 metal complexes of heavy chalcogen-centered anions, M[(TeP iPr2)2N]2 (5, M = Sn; 6, M = Pb) and M(TePiPr2NPiPr2Se)2 (7, M = Sn; 8, M = Pb), were synthesized in 64-89% yields by metathesis of alkali-metal salts of the ligands with group 14 metal dihalides. Crystallography characterization of the complexes revealed that 5, 6, and 8 engage in metal ... chalcogen secondary bonds to generate dimers, whereas 7 is monomeric in the solid state. Multinuclear (1H,31P, 77Se, and 125Te) solution NMR data for these homoleptic complexes evinced dynamic behavior leading to the equivalence of the two ligand environments. The Pb complex 6 was utilized as a single-source precursor to micrometer-scale lead telluride particles via two divergent techniques: aerosol-assisted chemical vapor deposition of the complex in THF/CH2CI2 solution onto glass substrates yielded rectangular prisms, while solution injection of 6 in tri-n-octylphosphine onto Si/SiO2(100) substrates heated to 200-220 °C resulted in the formation of wires. PXRD and EDX analysis of the products confirmed the phase purity of the PbTe materials.

An Fe-doped NiTe bulk crystal as a robust catalyst for the electrochemical oxygen evolution reaction

An Fe doped NiTe bulk crystal was demonstrated as a robust catalyst for the electrochemical oxygen evolution reaction. The promotion effect at least can be correlated with the significant electronic effect and the formation of lattice oxygen via bimetallic synergy by Fe doping.

Highly reversible Na-ion reaction in nanostructured Sb2Te3-C composites as Na-ion battery anodes

Sb2Te3 and its amorphous carbon-modified nanocomposite (Sb2Te3-C) are synthesized by simple solid-state synthetic methods, and their potential as anode materials for rechargeable Na-ion batteries (NIBs) is evaluated. Ex situ X-ray diffraction and high-resolution transmission electron microscopy clearly demonstrate the sodiation/desodiation reaction mechanism of the Sb2Te3 and Sb2Te3-C nanocomposite electrodes. In both electrodes, Sb2Te3 is converted into Na3Sb and Na2Te during Na insertion. However, Na3Sb and Na2Te in only the Sb2Te3-C nanocomposite electrode recombine into the original Sb2Te3 phase after full Na extraction. As a consequence of its interesting conversion/recombination reaction during sodiation/desodiation reaction, the Sb2Te3-C nanocomposite electrode exhibits a long cycle life with highly reversible gravimetric and volumetric capacity (373 mAh g-1 and 765 mAh cm-3 over 50 cycles) and fast rate capability (1 C: 391 mAh g-1 and 802 mAh cm-3; 2 C: 377 mAh g-1 and 773 mAh cm-3).