216581-76-9Relevant articles and documents
Photoresist resin monomer containing Meldrum's acid structure and synthesis method thereof
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Paragraph 0038-0042, (2021/04/17)
The invention discloses a photoresist resin monomer containing a Meldrum's acid structure, and relates to the field of photoresist resin monomers. The structural formula of the photoresist resin monomer is shown in the specification, R1 is methyl or H, R2 is alkyl, naphthenic base, alkyl containing O atoms, or naphthenic base containing O atoms, R3 is H or alkyl, and the resin monomer is beneficial to increase of the alkali solubility of the photoresist resin, the edge side roughness of a photo-etched pattern can be improved, the etching resistance is better, the resolution of the photo-etched pattern is greatly improved, and the adsorption force of the photoresist on a silicon wafer can be improved.
ADAMANTYL (METH)ACRYLIC MONOMER AND (METH)ACRYLIC POLYMER CONTAINING THE SAME AS REPEATING UNIT
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Paragraph 0074, (2013/03/26)
Provided according to the present invention are an adamantyl (meth)acrylate represented by formula (1), having a formazin standard turbidity of less than 1.7 NTU (Nephelometric Turbidity Unit) in methylethylketone or tetrahydrofuran, and also a (meth)acrylic copolymer comprising the adamantyl (meth)acrylate as a repeating unit: (in the formula, R1 represents hydrogen or a methyl group; R2 through R4 each independently represent a hydrogen atom, a hydroxyl group, an alkyl group having a carbon number of 1 to 3, an aryl group, an alkoxy group, an aryloxy group, a halogen group, an alkyl halide group, or a hydroxyalkyl group; and n1 represents 0 or 1).
Chemical amplifying type positive resist composition
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, (2008/06/13)
A chemical amplifying type positive resist composition, excellent in balance of performance of resolution and sensitivity, having high dry etching resistance and comprising; a resin having a polymerization unit derived from a monomer represented by the following formula (I): wherein R1 and R2 independently represent hydrogen or an alkyl group having 1 to 4 carbons, and R3 represents hydrogen or a methyl group, the resin being insoluble in alkali itself but becoming alkali-soluble due to the action of an acid; and an acid generating agent is provided.
Compounds for photoresist and resin composition for photoresist
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, (2008/06/13)
The photoresist resin composition comprises a polymer having an adamantane skeleton represented by the following formula and a photoactive acid precursor: wherein R1represents a hydrogen atom or a methyl group; R2, R3, and R4are the same or different from each other, each representing a hydrogen atom, a halogen atom, an alkyl group, a hydroxyl group, a hydroxylmethyl group, a carboxyl group, a functional group which forms a hydroxyl group, a hydroxymethyl group or a carboxyl group by elimination with an acid; at least one of the substituents R2to R4is the functional group defined above; X represents an ester bond or an amide bond; and each of m and n is 0 or 1. The above photoresist resin composition is highly resistant to an etching solution, solubilizable by irradiation with light, and capable of giving minute patterns.
POLYMERIZABLE ADAMANTANE DERIVATIVES AND PROCESS FOR PRODUCING THE SAME
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, (2008/06/13)
A compound shown by the following formula: ???wherein each of R1a, R2a, R3aand R4arepresents a substituent selected from a non-reactive atom, a non-reactive group, a hydroxyl group and an amino group, and at least two members selected from R1a, R2a, R3aand R4aare a hydroxyl group, a carboxyl group or an amino group; is subjected to an esterification reaction or an amidation reaction with a polymerizable unsaturated compound (e.g., an alcohol, a carboxylic acid, an amine) in the presence of a catalyst comprising an element selected from the Group 3 elements, such as a samarium compound, to obtain a polymerizable adamantane derivative having at least one polymerizable unsaturated group in high yield.