Formation mechanism and step coverage quality of tetraethylorthosilicate-SiO2 films studied by the micro/ macrocavity method

Article abstract of DOI:10.1149/1.2220938

The formation mechanism and step-coverage quality of SiO₂ films formed by the pyrolysis of tetraethylorthosilicate (TEOS) were studied, using a novel experimental technique called the 'multi-layered micro/macrocavity method.' The growth rate profiles at millimeter (macrocavity) and submicron (microtrench) sales deposited under a total pressure ranging from 2 to 760 Torr were simultaneously analyzed. The step coverage approaches conformal deposition either with decreasing volume-to-surface ratio (V/S) of the macrocavity reaction zone or with increasing total pressure.

Full text of DOI:10.1149/1.2220938

Downloaded on 2015-04-28 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-28 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-28 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-28 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-28 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-28 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-28 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-28 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).