Y.X. Jin et al. / Journal of Alloys and Compounds 622 (2015) 200–205
203
3
0–55 nm in average diameter at the nanoscale. Typical surface
morphology of the (1ꢀx)b-BZN–xBNN ceramics with x = 0.0, 0.2,
.0 are illustrated in Fig. 5. The SEM micrograph indicates that
value for orthorhombic phase and the negative
s
e
value for cubic
phase offer the potential for low s value in the two-phase region.
e
1
The frequency dependence of dielectric properties of the b-BZN
(x = 0.0) and BNN (x = 1.0) compositions at room temperature have
been presented in Fig. 6 (100 Hz–30 MHz). Dispersive behaviors
can be observed in both the dielectric constant and dielectric loss
dense microstructures with well-defined and closely packed grains
can be obtained in all the compositions. For x = 0.0 (orthorhombic
phase), it reveals a well-sintered polycrystalline sample with irreg-
ular (spherulite-like) grains due to its low crystallization tempera-
ture caused by the large bismuth content and their grain sizes are
2 7 7
tangent of the Bi Zn2/3Nb4/3O and Bi1.5NiNb1.5O compositions.
In addition, the decrease in dielectric loss tangent is rapid at lower
frequencies and becomes slow at higher frequencies, which takes
place when the jumping frequency of electric charge carriers can’t
follow the alternation of applied AC electric field beyond a certain
critical frequency [31]. And for the BZN pyrochlore ceramics, the
performances of the dielectric properties in higher frequency range
still need to be further investigated.
found in the range of 0.16–0.55 lm (Fig. 5(a)) [30]. As the x value
increasing, two kinds of grains, small grains and big grains corre-
sponding to orthorhombic and cubic phase respectively are
observed (Fig. 5(b)). For the BNN composition with cubic symme-
try (x = 1.0), dense microstructure with well-defined bigger polyg-
onal grains can be seen in Fig. 5(c) and their grain sizes are found in
the range of 0.67–1.2
BNN ceramics estimated by Scherrer method are 35 nm and
1 nm respectively, which indicate that the grains consist of hun-
l
m. The crystallite sizes of the b-BZN and
Fig. 7 shows the temperature dependence of the dielectric prop-
erties as a function of frequency for x = 0.0, 1.0 compositions. For
pure Bi Zn2/3Nb4/3O composition, the dielectric constant has a lin-
2 7
5
dreds of small crystallites.
ear temperature dependence with no relaxation, it increases
Table. 3 summarizes the dielectric properties of Bi
2
Zn2/3Nb4/3
O
7
slightly within the measurement temperature range (ꢀ55 °C to
(
x = 0 for orthorhombic phase), Bi1.5NiNb1.5
phase) end members and a low composition (x = 0.2). The cubic
phase exhibits much higher dielectric constant of = 122 than the
orthorhombic phase of = 83.3. All of them obtain relatively small
dielectric loss tangent (tand < 1 ꢅ 10 ) at 1 MHz. The positive
O
7
(x = 1.0 for cubic
+150 °C) as shown in Fig. 7(a). However, for the Bi1.5NiNb1.5O
7
s
e
composition (x = 1.0), the dielectric constant diminishes slowly, it
has a maximum around ꢀ50 °C at 1 MHz, which may shift to lower
temperature with decreasing frequency. Furthermore, as the fre-
quency increasing, the dielectric loss tangent increases and the
onset of dielectric loss tangent shifts toward higher temperature
below the room temperature as shown in Fig. 7(b). This drop
should be ascribed to the dielectric relaxation observed in cubic
e
r
e
r
ꢀ3
s
e
pyrochlores at lower temperatures and the T
at which the maximum in dielectric constant occurs) of
has been reported to be located blow 150 K [19].
This dielectric relaxation phenomenon has also been observed in
other bismuth pyrochlores, such as Bi ScNbO and Bi InNbO
and has been attributed to dipolar glasslike mechanism
32–34]. The upturns in dielectric loss tangent at higher tempera-
m
(the temperature
Bi1.5NiNb1.5O
7
2
7
2
7
,
a
[
ture are typically associated with losses by conduction. Such
variation is strongly dependent on the frequencies with losses at
high frequencies lower than those occurring at low frequencies.
With the temperature increasing, electrical conductivity increases
due to the increase in thermally activated drift mobility of electric
charge carriers according to the hopping conduction mechanism [31].
According to the infrared and Raman spectra data for the cubic
BZN pyrochlore, each A atom occupies one of 6 closely spaced pos-
0
sible positions and each O atom is disordered among 12 positions
[
7
34]. The relaxation behavior observed in the Bi1.5NiNb1.5O com-
positon might stem from the hopping of dynamically disordered
0
A (Bi/Ni) and O atoms among the closely spaced possible positions
[
34,35]. The origin of dynamic dielectric polarization relaxation in
the cubic BZN pyrochlore has also been investigated by Tan et al.
through the Raman spectroscopy and photoluminescence analysis
[
36]. The investigations demonstrate that A site vacancies (Zn defi-
ciency) and associated oxygen vacancies always exist in BZN
pyrochlores [28,35]. The existence of these oxygen vacancy sites
can lead to the creation of
a Frenkel defect notated by
0
0
O
o
$ O þ V o€ . The Frenkel defects associated with the existence
i
0
of vacancies on the A and O sites may result in the dielectric relax-
ation in the cubic BZN pyrochlore. However, the closely related
2 7
orthorhombic Bi Zn2/3Nb4/3O
which has completely ordered Bi3+
2
+
with no Zn substitution on the A sites as already mentioned,
exhibits no dielectric relaxation below phonon frequencies. The
absence of dielectric relaxation for the orthorhombic zirconolite
structure, in contrast to the cubic pyrochlore dielectric properties,
demonstrates that the primary structural differences between
these phases are responsible.
Fig. 8 presents the variations of the dielectric constants (
and temperature coefficients of dielectric constant ( ) of the
(1ꢀx)b-BZN–xBNN ceramics as a function of BNN content at 1 MHz.
r
e )
s
e
Fig. 5. SEM micrographs of the (1ꢀx)b-BZN–xBNN ceramics: (a) x = 0.0, (b) x = 0.2,
and (c) x = 1.0.