Benzo[c]thiophene–C60 Diadduct
BTCMA: 1H NMR (500 MHz, CDCl3/CS2 =1:1): d=5.94 (s, 2H), 7.35–
7.37 (m, 2H), 7.55–7.57 ppm (m, 2H); 13C NMR (125 MHz, CS2): d=
66.7, 77.7, 122.1, 127.0, 137.5, 138.8, 139.2, 139.7, 141.2, 141.7, 141.9,
142.3, 142.3, 144.0, 144.3, 144.7, 145.0, 145.1, 145.3, 145.7, 145.8, 146.0,
146.1, 146.9, 153.3, 155.0; elemental analysis calcd (%) for C68H6S: C
95.54, H 0.71, S 3.75; found: C 95.62, H 0.89.
BTCDA: 1H NMR (500 MHz, CDCl3): d=4.95–6.25 (m, 4H), 7.12–
7.79 ppm (m, 8H); 13C NMR (125 MHz, CDCl3/CS2 =1:4): d=66.7, 66.8,
67.0, 67.3, 67.4, 67.5, 67.6, 67.9, 68.0, 68.5, 75.9, 76.4, 76.5, 76.6, 76.7, 76.8,
77.0, 121.7, 121.8, 121.9, 122.0, 122.1, 122.2, 122.3, 126.5, 126.6, 126.7,
126.8, 126.9, 127.0, 127.1, 132.4, 133.5, 133.8, 135.3, 135.8, 135.9, 136.2,
136.5, 136.8, 136.9, 137.6, 137.8, 138.1, 138.2, 138.8, 139.1, 139.3, 139.6,
140.0, 140.5, 140.7, 141.2, 142.0, 142.5, 143.2, 143.6, 143.9, 144.2, 144.3,
144.4, 144.7, 145.0, 145.3, 145.4, 145.5, 145.7, 145.8, 145.9, 146.0, 146.1,
146.5, 147.1, 147.5, 147.6, 147.8, 148.0, 148.1, 148.8, 149.9, 150.3, 150.6,
150.7, 151.6, 151.8, 151.9, 152.1, 152.3, 152.4, 152.6, 152.9, 153.1, 153.3,
153.5, 153.6, 153.7, 153.8, 153.9, 154.3, 154.4, 154.5, 154.6, 155.3, 155.7,
155.8, 155.9, 156.1, 156.4, 157.2, 157.8, 157.9, 158.1, 158.2, 159.0, 159.1,
159.2, 159.5 ppm; elemental analysis calcd (%) for C76H12S2: C 92.29, H
1.22; found: C 92.52, H 1.48.
The two-donor (BP/TiOPc)-based heterojunction OPV devices were fab-
ricated by use of solvent-processed BP and vacuum-deposed TiOPc. The
ITO, PEDOT:PSS, BP, and TiOPc layers were fabricated as described
above. We fabricated the device with diadduct BTCDA (0.5 wt% in
chlorobenzene) by spin-coating to give a thickness of about 25 nm.
NBphen (7 nm) was deposited in vacuum (3ꢁ10À4 Pa) on top of active
layers as an exciton blocking layer, followed by the deposition of an alu-
minum electrode (Al, 80 nm) in vacuum, and thermal annealing at 808C.
The thickness of spin-coated layers was determined by using a Dektak
6M stylus profiler. All devices were encapsulated in a glove box under
a nitrogen atmosphere. The photocurrent of the fabricated OPV devices
was investigated with a sweeping voltage by using a Keithley 2400 source
measurement unit controlled by a computer under simulated solar light
using an AM1.5G light source with 100 mWcmÀ2 intensity. The incident
light intensity was calibrated to one sun (100 mWcmÀ2) with a standard
Si photodiode (BS-520, Bunkoukeiki, Japan). The current density versus
voltage (J–V) characteristics were measured for an area of 0.04 cm2.
EQE was measured under constant power generated by monochromat-
ized photons using a xenon or halogen lamp.
BTCTA: 1H NMR (500 MHz, CDCl3): d=4.95–6.01 (m, 6H), 6.98–
7.67 ppm (m, 12H); 13C NMR (125 MHz, CDCl3/CS2 =1:4): d=65.8, 65.9,
66.3, 66.5, 66.7, 66.8, 66.9, 67.0, 67.1, 67.5, 67.7, 67.9, 68.1, 68.3, 75.2, 75.5,
75.6, 75.8, 76.0, 76.1, 121.6, 121.7, 121.8, 121.9, 122.0, 122.1, 122.2, 122.3,
126.4, 126.5, 126.6, 126.7, 126.8, 126.9, 135.0, 136.3, 137.4, 137.5, 137.7,
138.8, 139.0, 140.0, 140.4, 140.5, 140.6, 140.7, 140.8, 140.9, 141.0, 141.1,
141.2, 141.3, 141.9, 142.0, 142.1, 142.2, 142.5, 143.5, 143.9, 144.3, 144.4,
145.1, 145.2, 145.3, 145.4, 145.5, 145.6, 145.7, 145.8, 145.9, 146.0, 146.1,
146.2, 146.3, 146.5, 148.1, 148.3, 148.6, 148.9, 151.0, 151.3, 151.9, 153.0,
154.1, 154.2, 154.4, 154.5, 154.7, 154.8, 154.9, 155.1, 155.2, 155.3, 155.5,
155.7, 156.1, 156.2, 156.3, 156.4, 156.5, 156.6, 156.8, 157.0, 157.8, 157.9,
158.1, 158.2, 158.4, 158.5, 159.8, 159.9, 160.0, 160.1, 160.9, 161.1, 161.3,
161.7, 161.9, 162.0, 162.2 ppm; elemental analysis calcd (%) for C84H18S3:
C 89.82, H 1.62; found: C 90.05, H 1.89.
Acknowledgements
We thank Dr. Hideyuki Tanaka and Dr. Lars Mattias Andersson (The
University of Tokyo) for helpful discussions on the data analysis. This
study was supported by the Funding Program for Next-Generation
World-Leading Researchers (Y.M.) and the Strategic Promotion of Inno-
vative Research and Development from the Japan Science and Technolo-
gy Agency (E.N.).
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Device Fabrication and Characterization
The p–n heterojunction OPV devices with BP as the p layer and ben-
zo[c]thiophene–C60 adducts as the n layer were fabricated by means of
the following procedure. A 145 nm thick, patterned indium tin oxide
(ITO) glass with a sheet resistance of 8 W/square was used as a substrate.
A conducting PEDOT:PSS (Clevios AI4083) layer was formed on the
glass/ITO substrate to obtain a thin film that was 30 nm thick. A solution
of
1,4:8,11:15,18:22,25-tetraethano-29H,31H-tetrabenzo-
ACHTUNGTRENNUNG[b,g,L,q]porphyrin (CP) in a chloroform/chlorobenzene mixture (1:2, w/
w) as a BP precursor was coated on the glass/ITO/PEDOT:PSS film to
form a CP thin film, which was thermally converted at 1808C for 20 min
to obtain a BP layer that was 25 nm thick. We fabricated each electron-
accepting benzo[c]thiophene–C60 adduct, BTCMA (0.5 wt% in ODCB),
BTCDA (0.5 wt% in toluene), and BTCTA (1.0 wt% in toluene), in so-
lution by spin-coating with thickness of about 30 nm. NBphen (7 nm) was
deposited in vacuum (3ꢁ10À4 Pa) on top of active layers as an exciton
blocking layer, followed by the deposition of an aluminum electrode
(80 nm) in vacuum and thermal annealing at 808C.
The p–n heterojunction OPV devices with TiOPc as the p layer and ben-
zo[c]thiophene–C60 adducts as the n layer were fabricated by means of
the following procedure: The ITO and PEDOT:PSS layers were fabricat-
ed as described for the previous procedure. Then a TiOPc layer that was
20 nm thick was formed by vacuum deposition at a rate of about 1 ꢂsÀ1
.
Phase I-to-II transition of TiOPc accelerated by exposure to chloroben-
zene extended the wavelength to the NIR region. This made it possible
to create electron-acceptor exposure of the deposited TiOPc film by
spin-coating in solution. Consequently, the phase transition of TiOPc
concurrently occurred during the fabrication of the acceptor layer. We
fabricated the device with BTCDA (0.5 wt% in chlorobenzene) by spin-
coating to give a thickness of about 25 nm. Finally, the NBphen layer and
aluminum electrode were deposited as described for the previous proce-
dure.
Chem. Asian J. 2012, 00, 0 – 0
ꢀ 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
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