Performance-wise, the non-doped red OLED reported here is
comparable with a previously reported non-doped red OLED
based on NPAMLMe.4 However, the synthesis and purification
of the red material NPAFN is even more convenient than those
of NPAMLMe. This makes NPAFN more commercially
significant than NPAMLMe to be employed in the fabrication
of non-doped red OLEDs.
In summary, we have developed a new red fluorophore
NPAFN as a rare host emitter in non-doped red OLEDs.
NPAFN is weakly emissive in solution but highly fluorescent in
the solid state and its photophysics are worth further explora-
tion. The easy synthesis and purification of NPAFN make non-
doped red OLEDs more feasible than ever. The performance of
the NPAFN-based red OLED is comparable with or better than
most fluorophore-based, dopant or non-doped red OLEDs,
although there is plenty of room for improvement. Conceivable
tests including the thickness of the NPAFN and BCP layers,
different hole-blocking and electron-transporting materials
other than BCP and TPBI, respectively, are underway. For the
material itself, the diarylamino moieties of NPAFN can be
easily replaced with various readily available substituents
through synthesis and the fluorescence and amorphous proper-
ties can thus be optimised.
Fig. 2 DSC thermograms of NPAFN with sequential heating and cooling.
The signal of the first heating thermogram is reduced two-fold to be
accommodated in the figure and the cooling thermograms are enlarged two-
fold for clarity.
The DSC characteristics imply there is no strong contact of
NPAFN molecules in the solid state and NPAFN shows limited
tendency to crystallize.
The bright solid-state fluorescence renders NPAFN quite
possible to be used as the non-doped host emitter in the
fabrication of red OLEDs. Two OLED devices with configura-
tions ITO/NPB(40 nm)/NPAFN(30 nm)/BCP(10 nm)/TPBI (30
nm)/MgAg and ITO/NPAFN(50 nm)/BCP(10 nm)/TPBI (30
nm)/MgAg were fabricated by sequential vacuum deposition of
organic materials on pre-treated ITO (indium tin oxide)-coated
glass.10 Despite the difference of the NPB layer, red electro-
luminescence (EL) of the both OLED devices became visible at
the about the same driving voltage between 3 and 4 V. The EL
of the OLED had emission maxima (lmaxel) around 634 and 636
nm (Fig. 1), although the spectra were broadened and red-
shifted (+18–20 nm) compared with the PL of the solid film.
Usually, such a difference between PL and EL indicates there is
a certain degree of aggregation formation of NPAFN providing
charge-trapped sites with lower energy.11 Nevertheless, both EL
spectra corresponded to coordinates (x = 0.64, y = 0.36) of the
1931 CIE (Commission Internationale de l’Eclairage) chroma-
ticity diagram, indicative of a red EL comparable with (x =
0.64, y = 0.33) of the National Television System Committee
(NTSC) standard red colour. The intensity of EL reached 10034
cd m22 and 9359 cd m22 for the devices with and without NPB,
respectively, as the maximum values recorded at 14.5 V and
over 1000 mA cm22 (Fig. 3). These are the two brightest non-
doped red OLEDs reported so far. More practical, at a low
current density of 20 mA cm22, the device without NPB still
emitted red EL with intensity as high as 392 cd m22, which is
bright enough for active-matrix-driven OLED displays. Moreo-
ver, at a current density of 20 mA cm22 (about 6.9 V), the
device reached 1.8% external quantum efficiency (or 2.0 cd
A21 photometric efficiency or 0.9 lm W21 power efficiency).
The performance of the device without NPB is even better at
low current density. The external quantum efficiency was as
high as 2.4% (or 2.5 cd A21 photometric efficiency or 1.7 lm
W21f power efficiency) at 4.5 V and 4 mA cm22. At 20 mA
cm22 (about 5.7 V), the device emitted red EL with intensity
455 cd m22, brighter than the device containing the NPB
layer.
Financial support from the National Science Council and
Academia Sinica is gratefully acknowledged.
Notes and references
† Characterization data of NPAFN: An orange red solid with red
fluorescence purified from train sublimation once. 1H NMR (400 MHz,
CD2Cl2): d(ppm) 7.94 (d, 2H, J = 8.1Hz), 7.91 (d, 2H, J = 8.5Hz), 7.87 (d,
2H. J = 8.3Hz), 7.61 (d, 4H, J = 9.1Hz), 7.56–7.47 (m, 4H), 7.45–7.39 (m,
4H), 7.33–7.27 (m, 4H), 7.25–7.21 (m, 4H), 7.10 (t, 2H, J = 7.3Hz), 6.92
(d, 4H, J = 9.1Hz). 13C NMR (100 MHz, CD2Cl2): d(ppm) 151.5, 147.0,
142.6, 140.0, 131.6, 130.4, 130.1, 129.2, 128.2, 128.1, 127.4, 127.0, 124.8,
124.7, 124.6, 124.2, 121.5, 119.0, 118.2. FAB-MS: calcd MW 664; m/z =
664. Anal. Found (calcd) for C48H32N4: C 86.61(86.72), H 4.80(4.85), N
8.23(8.43)%.
1 R. Dixon, Compound Semiconductor, 1999, 5(Nov/Dec), 43; S. C.
Stinson, Chem. Eng. News, 2000, June 26, 22; S. M Kelly, Flat Panel
Displays: Advanced Organic Materials, Royal Society of Chemistry,
Cambridge, 2000; B. Johnstone, Tech. Rev., 2001, 104(April), 80; O.
Gelsen, Opt. Laser Eur., 2003, 107(June), 33.
2 C. H. Chen, J. Shi and C. W. Tang, Macromol. Symp., 1997, 125, 1; Y.
Sato, Semicond. Semimet., 2000, 64, 209; I. D. Rees, K. L. Robinson, A.
B. Homes, C. R. Towns and R. O’Dell, MRS Bull., 2002, 27(6), 451.
3 L. S. Hung and C. H. Chen, Mater. Sci. Eng., 2002, R39, 143; T.
Fuhrmann and J. Salbeck, MRS Bull., 2003, 28(5), 354.
4 W.-C. Wu, H.-C. Yeh, L.-H. Chan and C.-T. Chen, Adv. Mater., 2002,
14, 1072.
5 K. R. Justin Thomas, J. T. Lin, Y.-T. Tao and C.-H. Chuen, Adv. Mater.,
2002, 14, 822.
6 H.-C. Yeh, W.-C. Wu and C.-T. Chen, Chem. Commun., 2003, 404.
7 H.-C. Yeh, L.-H. Chan, W.-C. Wu, Y.-S. Wen, G.-H. Lee and C.-T.
Chen, Adv. Funct. Mater., submitted.
8 T. Yamamoto, M. Nishiyama and Y. Koie, Tetrahedron Lett., 1998, 39,
2367.
9 Recently there have been two reports about the aggregation-induced
emission, although both are short wavelength of blue-green colour. J.
Luo, Z. Xie, J. W. Y. Lam, L. Cheng, H. Chen, C. Qiu, H. S. Kwok, X.
Zhan, Y. Liu, D. Zhu and B. Z. Tang, Chem. Commun., 2001, 1740; B.-
K. An, S.-K. Kwon, S.-D. Jung and S. Y. Park, J. Am. Chem. Soc., 2002,
124, 14410.
10 TPBI, NPB, and BCP here denote 2,2A,2B-(1,3,5-phenylene)tris(1-
phenyl-1H-benzimidazole),
1,4-bis(1-naphylphenylamino)biphenyl,
and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, respectively. De-
tails of the device fabrication and the method of EL characterization,
including luminescence (cd m22), current density (mA cm22), driving
voltage (V), and external quantum efficiency (%), follow a similar
procedure to that reported by Chan et al.: L.-H. Chan, R.-H. Lee, C.-F.
Hsieh, H.-C. Yeh and C.-T. Chen, J. Am. Chem. Soc., 2002, 124,
6469.
Fig. 3 EL intensity and external quantum efficiency of OLED, ITC/NPB(40
nm)/NPAFN(30 nm)/BCP(10 nm)/TPBI(30 nm)/MgAg (solid line) and
ITC/NPAFN(50 nm)/BCP(10 nm)/TPBI(30 nm)/MgAg (dotted line).
11 J. Kallinowski, in Organic Electroluminescent Materials and Devices,
ed. S. Miyata and H. S. Nalwa, Gordon and Breach, 1997, pp. 1–72.
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