J. Am. Ceram. Soc., 88 [8] 2227–2229 (2005)
DOI: 10.1111/j.1551-2916.2005.00420.x
ournal
J
Mechanical Properties of Zirconia Thin Films Deposited by Filtered
Cathodic Vacuum Arc
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Zhenghao Gan , Guoqing Yu, Zhiwei Zhao, C. M. Tan, and B. K. Tay
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
Surface Young’s modulus (E), hardness (H), and yield strength
Y) of zirconia films deposited on Si substrate by filtered ca-
thin film under wear or mechanical contact is easy to be eval-
uated.
(
thodic vacuum arc (FCVA) under different oxygen flow rate
were studied by nano-indentation measurement and finite ele-
ment modeling. Identified by X-ray diffraction, the structure of
the films evolves from amorphous to monoclinic, and then to
amorphous, with oxygen flow rate increasing from 10 to 80
standard cubic centimeters per minute, which affects the me-
chanical properties of the films. It is found that the elastic–per-
fect-plastic constitutive model is successfully applied to the films
with amorphous structure; however inadequate for the mono-
II. Experimental Details
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The ZrO thin films were deposited using an industrial FCVA
system (Nanofilm Technologies International Pte Ltd, Singa-
pore) described elsewhere. The substrates were Si (100) with
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4
00 mm average thickness, which were pre-cleaned with acetone,
alcohol, and de-ionized water followed by a nitrogen blow-dry
using a static neutralizing blow-off gun. Prior to deposition, the
substrates were sputter cleaned for 2 min by argon ion beams
clinic ZrO , indicating that dislocation-related plasticity possi-
2
bly occurs during nano-indentation.
(
800 eV and 45 mA), and then transferred into the deposition
ꢁ
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chamber, which was evacuated to 2.0ꢀ 10 Torr. A Zr cathode
(
99.98% pure) operated at 120 A DC current was ignited
through instant contact between cathode and anode to obtain
the plasma, which was steered out by a toroidal magnetic field
fixed at 40 mT to condense on a substrate. O gas (99.99%) was
2
led into the region near the Zr target. O flow rate chosen here
was varied from 10 to 80 standard cubic centimeters per minute
(sccm).
I. Introduction
IRCONIUM OXIDE (ZrO ) is a refractory material with excel-
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2
Z
lent chemical and corrosion resistance and low thermal con-
ductivity. Zirconia also has high hardness, making it a potential
wear coating. It is well known that brittle materials such as
1
zirconia are subject to plastic deformation under mechanical
contact, where the amount of elastic deformation is comparable
with that of plastic deformation. It is also known that exper-
The nano-indentation measurement was performed by using
Hysitron TriboScope (Hysitron Inc., Minneapolis, MN). In a
typical indentation process, the Berkovich indenter was forced
into a specimen using a pre-defined test force (400 mN), and a
load/unload curve was recorded for each indentation. For each
specimen, three independent indentations were performed. The
experimental load/unload curve will be compared with that ob-
tained from finite element modeling to derive the mechanical
properties (E, Y, and H) of the thin films. The nominal thickness
of the thin films is 500 nm.
2
imental method itself such as nanoindentation is hard to predict
the complex interaction in the vicinity of the contact zone be-
tween two contact materials. To study the plastic deformation of
brittle materials such as zirconia, a constitutive relationship
should be built. However, the conventional uniaxial tensile test
at room temperature does not give a yield strength (Y) of zir-
conia since it is more likely to fail by fracture rather than plas-
ticity under uniaxial tensile test.
The phases of the thin films were identified by XRD (X-ray
diffractometer, D5005, Siemens, Madison, WI) using CuKa ra-
Nanoindentation is a well-established technique for measur-
ing films’ mechanical properties. Both Young’s modulus (E) and
hardness (H) of the thin films are readily obtained by analyzing
˚
diation (wavelength of 1.54 A) at 40 kV and 40 mA with a thin
film goniometer (Rigaku, Tokyo, Japan). The incident angle of
the detailed shape of the unloading curve during nanoindenta-
tion. However, the report on yield strength of ZrO thin film is
the X-ray is 11.
3
2
limited since it could not be derived directly from the unloading
curve of the nano-indentation measurement. For a metallic ma-
terial under conditions of fully plastic indent, the yield strength
III. Finite Element Approach
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Some assumptions are made as follows to simplify the simula-
tion: (1) The root-mean-square (RMS) roughness of the surface
of the thin films is less than 0.1 nm. Thus, the surface roughness
is ignored in the model; (2) Residual stress (i.e., pre-existing
stress after deposition) is not included in the model; (3) Silicon
is believed to be 1/3 of the hardness. However, in ceramic ma-
2
terials like ZrO , yield occurs by bond cleavage, and the above
relationship does not apply. The H/Y value is always lower than
5
.
3
Under nanoindentation, high hydrostatic stress level is
around the contact zone, and an equivalent yield strength
EYS) could be defined to replace the usual yield strength giv-
2
substrate and ZrO are assumed to be isotropic and behave as
elastic perfect plastic. That is, only two parameters (i.e., E and
Y) are needed to decide the constitutive model. This is a good
(
en by the uniaxial test. In this work, with the aid of finite element
simulation, the EYS of zirconia films are studied, which were
deposited on Si (100) by filtered cathodic vacuum arc (FCVA) .
8–10
approximation widely accepted
since they are brittle materi-
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als, where yield usually happens by bond cleavage and work
hardening is not usually observed. The diamond indenter is as-
sumed to be isotropic and to deform purely elastically, with
With the EYS at hand, the in-progress deformation of zirconia
1
1
E 5 1140 GPa and n 5 0.07; (4) The friction between the ind-
enter and the specimen under test is ignored; (5) Film-substrate
is assumed to be mechanically bonded perfectly.
D. Marshall—contributing editor
The indentation with a Berkovich indenter was modeled as a
two-dimensional axisymmetric contact problem. This in one
way could save a lot of computational time and in another
Manuscript No. 10733. Received December 14, 2003; approved February 14, 2005.
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