Gallium nitride

Base Information

• Chemical Name: Gallium nitride
• CAS No.: 25617-97-4
• Deprecated CAS: 12024-03-2,1446207-09-5,1448238-33-2,1609630-87-6,2094993-80-1
• Molecular Formula: GaN
• Molecular Weight: 86.7535
• European Community (EC) Number: 247-129-0
• DSSTox Substance ID: DTXSID2067111
• Wikipedia: Gallium(III) nitride,Gallium nitride,Gallium_nitride
• Wikidata: Q411713
• Mol file: 25617-97-4.mol

Synonyms:gallium nitride;gallium nitride (GAN);GaN compound

Chemical Property of Gallium nitride

Chemical Property:

• Appearance/Colour: Grey / Yellow Crystalline solid
• Melting Point: 800oC
• Refractive Index: 2.70 (27℃)
• Boiling Point: decomposes at >600℃ [KIR78]
• PSA: 23.79000
• Density: 6.1
• LogP: -0.14072
• Sensitive.: Moisture Sensitive
• Water Solubility.: Slightly soluble in hot concentrated sulfuric acid and hot conc. sodium hydroxide. Insoluble in water and dilute acids.
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 1
• Rotatable Bond Count: 0
• Exact Mass: 82.92865
• Heavy Atom Count: 2
• Complexity: 10

Purity/Quality:

98%,99%, ^*data from raw suppliers

Gallium nitride 99.99% trace metals basis ^*data from reagent suppliers

Safty Information:

• Safety Statements: 22-24/25

MSDS Files:

Total 1 MSDS from other Authors

Useful:

• Chemical Classes: Metals -> Metals, Inorganic Compounds
• Canonical SMILES: N#[Ga]
• Uses: Blue and UV light emitter with applications in semiconductor devices including: LEDs, laser diodes, lighting, displays, and data storage. Gallium nitride (GaN) is a wide band gap semiconducting material, which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs), and field effect transistors (FETs). It can also be used as a transition metal dopant for spintronics-based applications.

Technology Process of Gallium nitride

There total 2 articles about Gallium nitride which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield:

gallium (7440-55-3) + ammonia (7664-41-7) → monoaminogallane (187612-26-6) + gallium(II) amide + gallium(I) amide (25617-97-4) + Ga*NH3 (219800-06-3,863660-02-0)

Guidance literature:

In solid matrix; Irradiation (UV/VIS); Ar matrix, various irradiation time - various products; not isolated, detected by IR;

DOI:10.1039/b001652g

Reference yield:

gallium (7440-55-3) + ammonia (7664-41-7) → Ga(NH3) (25617-97-4)

Guidance literature:

In gaseous matrix; reacn. of laser-vaporized Ga atoms with NH3 (2% in He); not isolated; photoionization time-of-flight mass detection;

DOI:10.1063/1.1410973

upstream raw materials:

gallium

ammonia

Refernces

Application of gallium nitride nanostructures and nitrogen doped carbon spheres as supports for the hydrogenation of cinnamaldehyde

10.1166/jnn.2013.7578

The study synthesizes gallium nitride (GaN) nanostructures via chemical vapor deposition (CVD) and nitrogen-doped carbon spheres (NCSs) through a single-stage CVD process, with TEM analysis revealing rod-like GaN NSs with average diameters of 200 nm and solid NCSs with diameters of 450 nm. Palladium (Pd) nanoparticles (1% and 3% loadings) are uniformly dispersed on acid-functionalized GaN NSs and NCSs. The catalysts are tested for the selective hydrogenation of cinnamaldehyde (CALD) in isopropanol at 40 and 60 °C under atmospheric pressure. Results show that the order of catalyst activity is 3% Pd/GaN > 3% Pd/NCSs > 1% Pd/NCSs > 1% Pd/GaN, with 1% Pd/GaN achieving 100% selectivity to hydrocinnamaldehyde (HCALD) at reasonable conversion rates. The study concludes that GaN NSs can be effectively used as support materials for Pd nanoparticles in hydrogenation reactions, offering better selectivity compared to NCSs.

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