1021604-68-1Relevant articles and documents
COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD
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, (2020/08/22)
The present invention provides a composition for resist underlayer film formation comprising a tellurium-containing compound or a tellurium-containing resin.
RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
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Paragraph 0523-0524, (2016/06/13)
A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.
CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN
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Paragraph 0194, (2014/10/29)
A cyclic compound of the present invention has a molecular weight of 500 to 5000, and is represented by the following formula (1):