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27634-89-5

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27634-89-5 Usage

General Description

P-cyclohexylbenzaldehyde is a chemical compound consisting of a benzene ring with a cyclohexyl group and an aldehyde functional group. It is commonly used in the production of fragrances and flavors, as well as in the manufacture of pharmaceuticals and agrochemicals. P-cyclohexylbenzaldehyde has a strong, sweet, and floral odor, making it a popular choice for use in perfumes and scented products. It is also employed as a precursor in the synthesis of other organic compounds. Additionally, p-cyclohexylbenzaldehyde has been studied for its potential anti-inflammatory and antioxidant properties, making it a subject of interest in pharmaceutical research. Overall, this chemical exhibits a range of practical and commercial applications, contributing to its significance in various industries.

Check Digit Verification of cas no

The CAS Registry Mumber 27634-89-5 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,7,6,3 and 4 respectively; the second part has 2 digits, 8 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 27634-89:
(7*2)+(6*7)+(5*6)+(4*3)+(3*4)+(2*8)+(1*9)=135
135 % 10 = 5
So 27634-89-5 is a valid CAS Registry Number.
InChI:InChI=1/C13H16O/c14-10-11-6-8-13(9-7-11)12-4-2-1-3-5-12/h6-10,12H,1-5H2

27634-89-5SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 20, 2017

Revision Date: Aug 20, 2017

1.Identification

1.1 GHS Product identifier

Product name 4-cyclohexylbenzaldehyde

1.2 Other means of identification

Product number -
Other names Benzaldehyde,4-cyclohexyl

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:27634-89-5 SDS

27634-89-5Relevant articles and documents

Alkyl-GeMe3: Neutral Metalloid Radical Precursors upon Visible-Light Photocatalysis

Wei, Li-Pu,Xiao, Bin,Xu, Qing-Hao

supporting information, (2022/02/17)

Single-electron transfer (SET) oxidation of ionic hypervalent complexes, in particular alkyltrifluoroborates (Alkyl-BF3?) and alkylbis(catecholato)silicates (Alkyl-Si(cat)2?), have contributed substantially to alkyl radical generation compared to alkali or alkaline earth organometallics because of their excellent activity–stability balance. Herein, another proposal is reported by using neutral metalloid compounds, Alkyl-GeMe3, as radical precursors. Alkyl-GeMe3 shows comparable activity to that of Alkyl-BF3? and Alkyl-Si(cat)2? in radical addition reactions. Moreover, Alkyl-GeMe3 is the first successful group 14 tetraalkyl nucleophile in nickel-catalyzed cross-coupling. Meanwhile, the neutral nature of these organogermanes offset the limitation of ionic precursors in purification and derivatization. A preliminary mechanism study suggests that an alkyl radical is generated from a tetraalkylgermane radical cation with the assistance of a nucleophile, which may also result in the development of more non-ionic alkyl radical precursors with a metalloid center.

Micelle enabled C(sp2)-C(sp3) cross-electrophile coupling in waterviasynergistic nickel and copper catalysis

Ye, Ning,Wu, Bin,Zhao, Kangming,Ge, Xiaobin,Zheng, Yu,Shen, Xiaodong,Shi, Lei,Cortes-Clerget, Margery,Regnier, Morgan Louis,Parmentier, Michael,Gallou, Fabrice

supporting information, p. 7629 - 7632 (2021/08/09)

A robust and sustainable C(sp2)-C(sp3) cross-electrophile coupling was developedvianickel/copper synergistic catalysis under micellar conditions. This protocol provided a general method to access alkylated arenes with good to excellent yields on a very large scale.

COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD

-

Paragraph 0561; 0563-0565, (2020/08/22)

The present invention provides a composition for resist underlayer film formation comprising a tellurium-containing compound or a tellurium-containing resin.

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