27634-89-5Relevant articles and documents
Alkyl-GeMe3: Neutral Metalloid Radical Precursors upon Visible-Light Photocatalysis
Wei, Li-Pu,Xiao, Bin,Xu, Qing-Hao
supporting information, (2022/02/17)
Single-electron transfer (SET) oxidation of ionic hypervalent complexes, in particular alkyltrifluoroborates (Alkyl-BF3?) and alkylbis(catecholato)silicates (Alkyl-Si(cat)2?), have contributed substantially to alkyl radical generation compared to alkali or alkaline earth organometallics because of their excellent activity–stability balance. Herein, another proposal is reported by using neutral metalloid compounds, Alkyl-GeMe3, as radical precursors. Alkyl-GeMe3 shows comparable activity to that of Alkyl-BF3? and Alkyl-Si(cat)2? in radical addition reactions. Moreover, Alkyl-GeMe3 is the first successful group 14 tetraalkyl nucleophile in nickel-catalyzed cross-coupling. Meanwhile, the neutral nature of these organogermanes offset the limitation of ionic precursors in purification and derivatization. A preliminary mechanism study suggests that an alkyl radical is generated from a tetraalkylgermane radical cation with the assistance of a nucleophile, which may also result in the development of more non-ionic alkyl radical precursors with a metalloid center.
Micelle enabled C(sp2)-C(sp3) cross-electrophile coupling in waterviasynergistic nickel and copper catalysis
Ye, Ning,Wu, Bin,Zhao, Kangming,Ge, Xiaobin,Zheng, Yu,Shen, Xiaodong,Shi, Lei,Cortes-Clerget, Margery,Regnier, Morgan Louis,Parmentier, Michael,Gallou, Fabrice
supporting information, p. 7629 - 7632 (2021/08/09)
A robust and sustainable C(sp2)-C(sp3) cross-electrophile coupling was developedvianickel/copper synergistic catalysis under micellar conditions. This protocol provided a general method to access alkylated arenes with good to excellent yields on a very large scale.
COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD
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Paragraph 0561; 0563-0565, (2020/08/22)
The present invention provides a composition for resist underlayer film formation comprising a tellurium-containing compound or a tellurium-containing resin.