107992-37-0
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Basic information
- Product Name: Silicon carbide
- Synonyms:
- CAS NO:107992-37-0
- Molecular Formula: CH8Si
- Molecular Weight: 48.16
- EINECS: N/A
- Product Categories: N/A
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Chemical Properties
- Melting Point: N/A
- Boiling Point: N/A
- Flash Point: N/A
- Appearance: /
- Density: N/A
- Refractive Index: N/A
- Storage Temp.: N/A
- Solubility: N/A
- CAS DataBase Reference: Silicon carbide(CAS DataBase Reference)
- NIST Chemistry Reference: Silicon carbide(107992-37-0)
- EPA Substance Registry System: Silicon carbide(107992-37-0)
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Safety Data
- Hazard Codes: N/A
- Statements: N/A
- Safety Statements: N/A
- WGK Germany:
- RTECS:
- HazardClass: N/A
- PackingGroup: N/A
- Hazardous Substances Data: 107992-37-0(Hazardous Substances Data)
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Check Digit Verification of cas no
The CAS Registry Mumber 107992-37-0 includes 9 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 6 digits, 1,0,7,9,9 and 2 respectively; the second part has 2 digits, 3 and 7 respectively.Calculate Digit Verification of CAS Registry Number 107992-37:
(8*1)+(7*0)+(6*7)+(5*9)+(4*9)+(3*2)+(2*3)+(1*7)=150
150 % 10 = 0
So 107992-37-0 is a valid CAS Registry Number.
107992-37-0Upstream product
107992-37-0Downstream Products
107992-37-0Related news
In an effort to develop highly porous silicon carbide for high temperature air filtration, an alternative approach to forming silicon carbide nanowires (SCNW) was developed by blending carbon containing materials with silicon powder and heating these precursors to 1400 °C. The mixing ratio of p...detailed
Impact resistance from foreign debris is a critical requirement for brittle ceramic and ceramic composite materials intended for use in the hot-section of gas turbine engines. A design to mitigate against such impact failures necessitates a detailed understanding of the driving failure mechanism...detailed
The Y3Si2C2 coating on the surface of the silicon carbide powders can play as an important additive to improve the sintering process of silicon carbide ceramics. A detailed thermodynamic description for the Y-Si-C system is desired to study the sintering and densification mechanisms. Coupling th...detailed
Silicon carbide ceramics have found widespread use due to their high corrosion stability. Both solid state-sintered silicon carbide, which has an extremely high corrosion resistance, and silicon-infiltrated silicon carbide are used for various applications. The latter material contains SiC as we...detailed
This study reports the preparation of silicon carbide ceramic membranes with pure silicon carbide particles without sintering aids. The effects of sintering temperature on the microstructure, mechanical and filtration properties were investigated. The porosity of the substrate layer increased fr...detailed
Silicon Carbide (SiC), also known as carborundum, has been found to be widely useful as a substrate and wide band gap semiconductor in radiation resistant optoelectronic devices. The aim of this study is to discuss the thermoluminescence (TL) properties of silicon carbide (SiC) used in industria...detailed
A novel shaping method for the fabrication of reaction bonded silicon carbide structures was investigated in this work. A paste consisting of silicon carbide as inert filler and carbon powder was developed and printed by robocasting technology. Layer by layer deposition of the ceramic paste faci...detailed
Comparative studies (nanoindentation and micro-scratch tests) of the mechanical properties of composite diamond/silicon carbide and diamond layers deposited by a microwave plasma enhanced chemical vapour deposition system with linear antennas, show that composite layers have significantly superi...detailed
Silicon carbide ceramic is a promising membrane material because of the high corrosive and high temperature resistance, and the excellent hydrophility. Here, a silicon carbide ceramic membrane with both substrate layer and separate layer composed of pure silicon carbide phase was successfully pr...detailed
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