Tuning microstructures and separation behaviors of pure Silicon carbide (cas 107992-37-0) membranes
-
Add time:08/25/2019 Source:sciencedirect.com
This study reports the preparation of Silicon carbide (cas 107992-37-0) ceramic membranes with pure silicon carbide particles without sintering aids. The effects of sintering temperature on the microstructure, mechanical and filtration properties were investigated. The porosity of the substrate layer increased from 37% to 41% when the sintering temperature ranged from 2150 to 2300 °C, whereas the flexural strength increased from 14.5 to 18.2 MPa. The separation layer was coated on the substrate layer using a spray process. When sintered at 1850 °C, a smooth and defect-free layer was formed with an average pore size and layer thickness of 1.2 and 60 μm, respectively. With the increase of average pore size, the filtration flux increased from 2650 to 2800 L/(m2 h bar). Such ceramic membranes can be used to separate corrosive wastewater and high-temperature wastewaters owing to the exclusion of sintering aids, unlike the conventional ceramic membranes.
We also recommend Trading Suppliers and Manufacturers of Silicon carbide (cas 107992-37-0). Pls Click Website Link as below: cas 107992-37-0 suppliers
Prev:Relaxation of residual microstress in reaction bonded Silicon carbide (cas 107992-37-0)
Next:Corrosion resistance of silicon-infiltrated Silicon carbide (cas 107992-37-0) (SiSiC)) - 【Back】【Close 】【Print】【Add to favorite 】
- Related Information
- In-situ growth of Silicon carbide (cas 107992-37-0) nanowire (SCNW) matrices from solid precursors08/29/2019
- Real-time visualization of impact damage in monolithic Silicon carbide (cas 107992-37-0) and fibrous Silicon carbide (cas 107992-37-0) ceramic composite08/28/2019
- Thermodynamic description of the sintering aid system in Silicon carbide (cas 107992-37-0) ceramics with the addition of yttrium08/27/2019
- Corrosion resistance of silicon-infiltrated Silicon carbide (cas 107992-37-0) (SiSiC)08/26/2019
- Relaxation of residual microstress in reaction bonded Silicon carbide (cas 107992-37-0)08/24/2019
- Thermoluminescence dosimetric properties of Silicon carbide (cas 107992-37-0) (SiC) used in industrial applications08/23/2019
- Original ArticleRobocasting of reaction bonded Silicon carbide (cas 107992-37-0) structures08/22/2019
- Synthesis and properties of diamond - Silicon carbide (cas 107992-37-0) composite layers08/21/2019
- Original ArticleEvaporation-condensation derived Silicon carbide (cas 107992-37-0) membrane from Silicon carbide (cas 107992-37-0) particles with different sizes08/20/2019
-
Health and Chemical more >


