12065-36-0

Basic information

• Product Name: GERMANIUM NITRIDE
• Synonyms: GERMANIUM NITRIDE;GERMANIUM TETRANITRIDE;trigermanium tetranitride;GERMANIUM NITRIDE, 99.99+%;germanium(iii) nitride;Germanium(III) nitride >=99.99% trace metals basis
• CAS NO: 12065-36-0
• Molecular Formula: Ge3N4
• Molecular Weight: 273.95
• EINECS: 235-064-0
• Product Categories: Nitrides;Ceramics;Metal and Ceramic Science
• Mol File: 12065-36-0.mol
• Article Data: 0

Chemical Properties

• Melting Point: >850 °C (dec.)(lit.)
• Appearance: /orthorhombic crystals
• Density: 5.35 g/mL at 25 °C(lit.)
• Water Solubility: insoluble H2O; does not react with most mineral acids, aqua regia or caustic solutions [KIR78] [CRC10]
• CAS DataBase Reference: GERMANIUM NITRIDE(CAS DataBase Reference)
• NIST Chemistry Reference: GERMANIUM NITRIDE(12065-36-0)
• EPA Substance Registry System: GERMANIUM NITRIDE(12065-36-0)

Safety Data

• Hazard Codes: Xi
• Statements: 36/37/38
• Safety Statements: 26-36
• WGK Germany: 3
• TSCA: Yes
• Hazardous Substances Data: 12065-36-0(Hazardous Substances Data)

Usage

Description

Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.2 It is used in etchant formulation, which was originally developed for silicon oxynitride.3

References

G. Maggioni, S. Carturan, L. Fiorese, N. Pinto, F. Caproli, D. R. Napoli, M. Giarola, G. Mariotto, Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors, 2017, vol. 393, pp.119-126 H. Kondo, I. Yanagi, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, Electrical properties and bonding structures of germanium nitride/Ge(100) structures formed by radical nitridation, 2006, vol. 3, pp. 287-289 P. Walker, W. H. Tarn, CRC Handbook of Metal Etchants, 1991, ISBN 0-8493-6323-6

Chemical Properties

brownish-white powder(s); -200 mesh with 99.999% purity; prepared by reacting Ge powder(s) and ammonia at 700°C–850°C; ortho-rhomb; a=1.384nm, b=0.406 nm, c=0.818 nm [CIC73] [CER91] [CRC10]

InChI:InChI=1/3Ge.4N/q3*+4;4*-3

Related news

Plasma enhanced GERMANIUM NITRIDE (cas 12065-36-0) dielectric thin films for phase-change recording systems08/03/2019

The more efficient dielectric material and structure have been developed for fast phase-change optical recording systems. The germanium nitride thin film was reactively sputtered using a d.c. chamber, operated at 3 kW with a mixed gas plasma of argon and nitrogen. The dielectric thin film of 11–...detailed

The Meyer-Neldel rule in the conductivity of insulating GERMANIUM NITRIDE (cas 12065-36-0) and oxynitride films08/01/2019

Electrical conductivity, σ(T), of a-Ge3Nx (3.7detailed

Study of amorphous Zinc GERMANIUM NITRIDE (cas 12065-36-0) thin films grown by reactive co-sputtering07/30/2019

Under its crystalline form, the ZnGeN2 alloy is promising for optoelectronic devices such as LEDs because of its large, direct and adjustable band gap. Nevertheless, data are scarce, more especially for the amorphous form. We report here on the study of zinc germanium nitride amorphous thin film...detailed

Thermally induced irreversibility in the conductivity of GERMANIUM NITRIDE (cas 12065-36-0) and oxynitride films07/29/2019

We report the evidence for irreversible changes in the conductivity, σ(T), of a-Ge3Nx (3.7detailed

GERMANIUM NITRIDE (cas 12065-36-0) and oxynitride films for surface passivation of Ge radiation detectors07/28/2019

This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the...detailed