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Germanium nitride (Ge3N4) is an inorganic compound that does not occur naturally. It is a brownish-white powder with a purity of 99.999% and has an orthorhombic crystal structure. Germanium nitride can be synthesized by reacting germanium powder with ammonia at temperatures ranging from 700°C to 850°C. It has a unique set of properties that make it suitable for various applications in the semiconductor industry.

12065-36-0

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12065-36-0 Usage

Uses

Used in Semiconductor Industry:
Germanium nitride is used as a passivation layer in germanium-based radiation detectors. This application helps protect the sensitive components of the detector from environmental factors and enhances its performance.
Used in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs):
Germanium nitride is employed as a water-insoluble gate dielectric film in MOSFETs with a germanium channel. This application takes advantage of its insulating properties to improve the performance and reliability of the transistor.
Used in Etchant Formulation:
Germanium nitride is utilized in etchant formulations originally developed for silicon oxynitride. This application allows for the precise etching of germanium nitride layers in semiconductor devices, enabling the fabrication of complex structures and circuits.

References

G. Maggioni, S. Carturan, L. Fiorese, N. Pinto, F. Caproli, D. R. Napoli, M. Giarola, G. Mariotto, Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors, 2017, vol. 393, pp.119-126 H. Kondo, I. Yanagi, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, Electrical properties and bonding structures of germanium nitride/Ge(100) structures formed by radical nitridation, 2006, vol. 3, pp. 287-289 P. Walker, W. H. Tarn, CRC Handbook of Metal Etchants, 1991, ISBN 0-8493-6323-6

Check Digit Verification of cas no

The CAS Registry Mumber 12065-36-0 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,6 and 5 respectively; the second part has 2 digits, 3 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 12065-36:
(7*1)+(6*2)+(5*0)+(4*6)+(3*5)+(2*3)+(1*6)=70
70 % 10 = 0
So 12065-36-0 is a valid CAS Registry Number.
InChI:InChI=1/3Ge.4N/q3*+4;4*-3

12065-36-0 Well-known Company Product Price

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  • Aldrich

  • (447552)  Germanium(III)nitride  ≥99.99% trace metals basis

  • 12065-36-0

  • 447552-5G

  • 2,387.97CNY

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12065-36-0SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 12, 2017

Revision Date: Aug 12, 2017

1.Identification

1.1 GHS Product identifier

Product name Germanium(III) nitride

1.2 Other means of identification

Product number -
Other names -

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

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12065-36-0Related news

Plasma enhanced GERMANIUM NITRIDE (cas 12065-36-0) dielectric thin films for phase-change recording systems08/03/2019

The more efficient dielectric material and structure have been developed for fast phase-change optical recording systems. The germanium nitride thin film was reactively sputtered using a d.c. chamber, operated at 3 kW with a mixed gas plasma of argon and nitrogen. The dielectric thin film of 11–...detailed

The Meyer-Neldel rule in the conductivity of insulating GERMANIUM NITRIDE (cas 12065-36-0) and oxynitride films08/01/2019

Electrical conductivity, σ(T), of a-Ge3Nx (3.7detailed

Study of amorphous Zinc GERMANIUM NITRIDE (cas 12065-36-0) thin films grown by reactive co-sputtering07/30/2019

Under its crystalline form, the ZnGeN2 alloy is promising for optoelectronic devices such as LEDs because of its large, direct and adjustable band gap. Nevertheless, data are scarce, more especially for the amorphous form. We report here on the study of zinc germanium nitride amorphous thin film...detailed

Thermally induced irreversibility in the conductivity of GERMANIUM NITRIDE (cas 12065-36-0) and oxynitride films07/29/2019

We report the evidence for irreversible changes in the conductivity, σ(T), of a-Ge3Nx (3.7detailed

GERMANIUM NITRIDE (cas 12065-36-0) and oxynitride films for surface passivation of Ge radiation detectors07/28/2019

This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the...detailed

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