Study of amorphous Zinc GERMANIUM NITRIDE (cas 12065-36-0) thin films grown by reactive co-sputtering
-
Add time:07/30/2019 Source:sciencedirect.com
Under its crystalline form, the ZnGeN2 alloy is promising for optoelectronic devices such as LEDs because of its large, direct and adjustable band gap. Nevertheless, data are scarce, more especially for the amorphous form. We report here on the study of zinc GERMANIUM NITRIDE (cas 12065-36-0) amorphous thin films obtained by reactive co-sputtering. The samples are elaborated by PVD and analyzed by physical and chemical methods to determine their composition, structure and optical properties. We observe a clear evolution of these properties with composition. The shape of the complex refractive index reveals changes in the electronic structure. Furthermore, the optical gap and Urbach energy decrease with increasing zinc content.
We also recommend Trading Suppliers and Manufacturers of GERMANIUM NITRIDE (cas 12065-36-0). Pls Click Website Link as below: cas 12065-36-0 suppliers
Prev:Thermally induced irreversibility in the conductivity of GERMANIUM NITRIDE (cas 12065-36-0) and oxynitride films
Next:Novel approach for n-type doping of HVPE gallium nitride with germanium) - 【Back】【Close 】【Print】【Add to favorite 】
- Related Information
- Infrared photo-resistors based on recrystallized amorphous germanium films on flexible substrates08/06/2019
- Crystal growth of HVPE-GaN doped with germanium08/05/2019
- Magnetism in germanium-doped boron-nitride nanotubes08/04/2019
- Plasma enhanced GERMANIUM NITRIDE (cas 12065-36-0) dielectric thin films for phase-change recording systems08/03/2019
- Comparison of Silicon, Germanium, Gallium Nitride, and Diamond for using as a detector material in experimental high energy physics08/02/2019
- The Meyer-Neldel rule in the conductivity of insulating GERMANIUM NITRIDE (cas 12065-36-0) and oxynitride films08/01/2019
- Novel approach for n-type doping of HVPE gallium nitride with germanium07/31/2019
- Thermally induced irreversibility in the conductivity of GERMANIUM NITRIDE (cas 12065-36-0) and oxynitride films07/29/2019
- GERMANIUM NITRIDE (cas 12065-36-0) and oxynitride films for surface passivation of Ge radiation detectors07/28/2019
-
Health and Chemical more >


