12325-81-4

Usage

Uses

Used in Semiconductor Industry:
Lanthanum sulfide is used as a semiconductor material for its electronic properties, finding applications in various electronic devices and components.
Used in Photovoltaic Industry:
Lanthanum sulfide serves as a precursor material for synthesizing compounds used in photovoltaic devices, contributing to the development of solar energy technology.
Used in Optoelectronic Industry:
Due to its unique optical properties, lanthanum sulfide is utilized in optoelectronic devices, playing a role in the advancement of light-based electronic systems.
Used in Material Synthesis:
Lanthanum sulfide is used as a precursor for the synthesis of other lanthanum compounds, which can be employed in a range of industrial applications, including catalysts and specialty materials.
Used in Research and Development:
In the field of solid-state physics, lanthanum sulfide is used for studying its electronic and optical properties, aiding in the understanding of material behavior and the development of new technologies.

InChI:InChI=1/La.2S/q+3;2*-2

Upstream product

• 75-15-0 carbon disulfide 
• 7439-91-0 lanthanum 
• 7704-34-9 sulfur 
• 7783-06-4 hydrogen sulfide 
• 10044-94-7 lanthanum methoxide 
• 1336-23-8 potassium disulfid 
• 12775-96-1 copper 

Downstream Products

• 7704-34-9 sulfur 

Related news

Preparation of LANTHANUM SULFIDE (cas 12325-81-4) nanoparticles by thermal decomposition of lanthanum complex08/12/2019

γ-La2S3 nanoparticles were successfully prepared by thermal decomposition of lanthanum complex La(Et2S2CN)3·phen at low temperature. The obtained sample was characterized by the X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and element analysis. The decomposition mechanism...detailed

Deposition and annealing effect on LANTHANUM SULFIDE (cas 12325-81-4) thin films by spray pyrolysis08/11/2019

Lanthanum sulfide thin films were prepared on glass substrates from aqueous medium using spray pyrolysis technique. The effect of preparative parameters such as substrate temperature and solution concentration on the films was studied. The lanthanum sulfide films were annealed in air at 300 °C ...detailed

Fabrication and performance evaluation of rare earth LANTHANUM SULFIDE (cas 12325-81-4) film for supercapacitor application: Effect of air annealing08/10/2019

In this work, the electrochemical properties of rare earth lanthanum sulfide (La2S3) films obtained by chemical bath deposition method are investigated as an electrode material for supercapacitor application. The effect of air annealing on structural, surface morphological and wettability proper...detailed

Relevant academic research and scientific papers

Rare earth metal disulfides - Syntheses and crystal structures of α-CeS2, α-NdS2, β-LaS2, β-CeS2, and β-PrS2

α-CeS2 and α-NdS2 were obtained by a metathesis reaction of the anhydrous trichlorides LfiCI3 (Ln = Ce, Nd) and Na2S2 at 1070 K. The two compounds adopt a monoclinic structure type, the so-called CeSe

STUDIES ON LANTHANOIDS-ANTIMONY-CHALCOGENIDES. I. SYNTHESIS AND CRYSTAL DATA OF THREE NEW LANTHANUM ANTIMONY CHALCOGENIDES.

Three new La-Sb chalcogenides were synthesized by hydrothermal or evacuated silica tube methods. (1) LaSbO//2S//2: a bright-red needle crystal; crystal system, hexagonal; space group, P6//3/m; lattice constants, a equals 14. 954(3), c equals 3. 898(2) A, and Z equals 6. (2) La//6Sb//8S//2//1: a blackish-red columnar crystal with metallic luster, orthorhombic, P222, a equals 14. 317(2), b equals 15. 239(4), c equals 8. 685(1) A, and Z equals 2. (3) La//3Sb//3S//1//0: a bright-red plate-like crystal, monoclinic, a equals 13. 209(6), b equals 14. 229(6), c equals 5. 583(1) A, beta equals 94. 54(3) degree , and Z equals 2.

LaS1.9, CeS1.9, PrS1.9, NdS1.9, and GdS1.9: Five new lanthanide polysulfides - Syntheses, crystal structures and their structural relationship to the ZrSSi type

Crystals of the five new lanthanide polysulfides LaS1.9, CeS1.9, PrS1.9, NdS1.9, and GdS1.9 have been prepared by different synthetic routes. According to X-ray structure analyses, the compounds adopt the tetragonal CeSe1.9 type structure (space group: P42/n, no. 86) with the lattice parameters a = 9.111(1)A, c = 16.336(2) A (LaS1.9), a = 9.015(3) A, c = 16.168(4) A(CeS1.9), a = 8.947(3) A, c = 16.054(4) A (PrS1.9), a = 8.901 (3) A, c = 16.022(4) A(NdS1.9), and a = 8.714(1) A, c = 15.791(1) A (GdS1.9), respectively. The crystal structure consists of puckered [LnS] double slabs and planar sulfur layers alternating along [001]. Each planar sulfur layer contains disulfide dumbbells, isolated anions and ordered vacancies.

The La2S3LaS2 system: Thermodynamic and kinetic study

A detailed thermodynamic study of the LaS2La2S 3 system in the temperature range 3501000 °C was performed, starting from high quality crystals LaS2 as the highest polysulfide in the system, and using a sensitive static tensimetric method with a quartz Bourdon gauge and a membrane as a null-point instrument. The pSTx diagram obtained has shown that the phase region covering the composition between LaS2 and La2S3, which was previously described as a single grossly nonstoichiometric phase, consists of three discrete stoichiometric phases, LaS2.00, LaS1.91, and LaS1.76, where compositions could be determined with an accuracy of ±0.01 f.u. The thermodynamic characteristics of evaporation of the polysulfides as well as standard heat of LaS2 formation were calculated. The role of kinetics in the formation of ordered superstructures of sulfur-poorer polysulfides with different formal concentration of vacancies is considered.