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12434-16-1

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12434-16-1 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 12434-16-1 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,4,3 and 4 respectively; the second part has 2 digits, 1 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 12434-16:
(7*1)+(6*2)+(5*4)+(4*3)+(3*4)+(2*1)+(1*6)=71
71 % 10 = 1
So 12434-16-1 is a valid CAS Registry Number.

12434-16-1SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 14, 2017

Revision Date: Aug 14, 2017

1.Identification

1.1 GHS Product identifier

Product name ERBIUM SILICIDE

1.2 Other means of identification

Product number -
Other names -

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12434-16-1 SDS

12434-16-1Upstream product

12434-16-1Downstream Products

12434-16-1Related news

Epitaxial ERBIUM SILICIDE (cas 12434-16-1) films on(100) silicon: growth, structure and electrical properties08/19/2019

Erbium silicide layers were grown epitaxially on (100) Si. Electron microscopy results showed that ErSi2−x layers grow on (100) Si with hexagonal and tetragonal crystalline structures, depending on the method of deposition, the substrate temperature and their stoichiometry. Electrical resistivit...detailed

Ab-initio calculations of the optical and magnetic properties of ERBIUM SILICIDE (cas 12434-16-1) ErSi208/18/2019

We present a computational method for the ab-initio study of the optical and magnetic properties using the augmented plane wave plus local orbitals (APW+lo) method. The calculations are presented within the local density (LDA) approximation. Erbium silicide (ErSi2) is representative of the whole...detailed

Epitaxial ERBIUM SILICIDE (cas 12434-16-1) on Ge+ implanted silicon08/14/2019

Erbium silicide layers were grown epitaxially on Ge+ ion implanted Si. Epitaxy of ErSi2−x layers was achieved at a temperature of 750 °C. The layers are grown in the tetragonal phase. The growth of the silicide layers resulted in a drastic decrease of the dislocations in the SiGe layer accompan...detailed

Two-phases epitaxial growth of ERBIUM SILICIDE (cas 12434-16-1) on Si (1 0 0)08/12/2019

During the growth of erbium silicide on a Si (1 0 0) substrate the exceptional growth of a trapezoid inclusion in the substrate was observed by electron microscopy. It is found that in the inclusion a strained hexagonal silicide was grown, although the silicide overlayer grows with the tetragona...detailed

Doping and strain effects on the microstructure of ERBIUM SILICIDE (cas 12434-16-1) on Si:P08/10/2019

In pursuit of a potential low-resistive contact structure, ErSi2-x was grown on an excessively P-doped and highly strained epitaxial Si layer (Si:P with a P concentration of ∼2.8 at%), and its microstructure was investigated in comparison to that grown on a conventional Si(001) substrate. On th...detailed

12434-16-1Relevant articles and documents

On the formation and structural properties of hexagonal rare earth (Y, Gd, Dy, Er and Yb) disilicide thin films

Geenen,Knaepen,Demeulemeester,De Keyser,Jordan-Sweet,Lavoie,Vantomme,Detavernier

, p. 149 - 156 (2014)

A systematic study was performed of the solid state reaction between a 100 nm thick layer of a rare earth metal and a Si substrate. The solid state reaction of five different rare earth metals (yttrium, gadolinium, dysprosium, erbium and ytterbium) were studied by in situ X-ray diffraction measurements on Si(1 0 0), Si(1 1 1) and poly-Si. This allowed us to make a comparison between the different systems. The formation temperature of h-RESi1.7 are the highest on Si(1 1 1) and the lowest on poly-Si for all examined RE metals. Additionally, the texture of the Gd disilicide phase on Si(1 0 0) and Si(1 1 1) was investigated by means of ex situ pole figure measurements. The epitaxial relationship of hexagonal GdSi1.7 and orthorhombic GdSi2 on the different Si substrates is determined. The epitaxial growth is the strongest on Si(1 1 1).

The ternary RE-Si-B systems (RE = Dy, Ho, Er and Y) at 1270 K: Solid state phase equilibria and magnetic properties of the solid solution REB2-xSix (RE = Dy and Ho)

Roger, Jérome,Babizhetskyy, Volodymyr,Guizouarn, Thierry,Hiebl, Kurt,Guérin, Roland,Halet, Jean-Fran?ois

, p. 72 - 84 (2008/10/09)

The solid state phase equilibria in the ternary RE-Si-B diagrams (RE = Dy, Ho, Er and Y) were determined at 1270 K using experimental techniques such as X-ray diffraction, scanning electron microscopy and electron probe microanalysis. In general, three ternary phases were obtained for each diagram: the line compound RE5Si2B8 with tetragonal symmetry, the boron-inserted Nowotny phase RE5Si3Bx of Mn5Si3-type and the solid solution REB2-xSix of AlB2-type. Prior to this work, the binary systems RE-Si and RE-B, which form the boundary of each diagram, were also re-investigated. In addition to the structures of RE5Si3 (Mn5Si3-type, RE = Dy, Ho and Y) and Dy3Si4 (Ho3Si4-type) which were previously reported or will be presented in a forthcoming paper, the X-ray single crystal structures of RE5Si4 (Sm5Ge4-type, RE = Dy and Ho), DySi (CrB-type) and HoSi in both polymorphic modifications, i.e. the FeB- (high temperature) and CrB- (low temperature) types, were determined and are described herein. Structural relationships between members of the same series on one side, and between both forms of HoSi on the other side, are also discussed in terms of coordination polyhedra and interatomic distances. Finally, magnetic measurements were performed on the alloys REB2-xSix, which in case of RE = Dy exhibit a marked increase of the magneto-crystalline anisotropy, whereas for RE = Ho a change from ferromagnetic to antiferromagnetic behaviour with increasing silicon content is encountered.

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