Epitaxial ERBIUM SILICIDE (cas 12434-16-1) on Ge+ implanted silicon

Add time:08/14/2019    Source:sciencedirect.com

ERBIUM SILICIDE (cas 12434-16-1) layers were grown epitaxially on Ge+ ion implanted Si. Epitaxy of ErSi2−x layers was achieved at a temperature of 750 °C. The layers are grown in the tetragonal phase. The growth of the silicide layers resulted in a drastic decrease of the dislocations in the SiGe layer accompanied by the accumulation of defects at the SiGe/ErSi2−x interface. A small redistribution of the Ge in the SiGe layer was also observed.

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