Epitaxial ERBIUM SILICIDE (cas 12434-16-1) films on(100) silicon: growth, structure and electrical properties
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Add time:08/19/2019 Source:sciencedirect.com
ERBIUM SILICIDE (cas 12434-16-1) layers were grown epitaxially on (100) Si. Electron microscopy results showed that ErSi2−x layers grow on (100) Si with hexagonal and tetragonal crystalline structures, depending on the method of deposition, the substrate temperature and their stoichiometry. Electrical resistivity measurements show that the two crystalline phases of ErSi2−x are metallic and have slightly different electronic and magnetic properties.
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