Welcome to LookChem.com Sign In|Join Free

CAS

  • or

13537-33-2

Post Buying Request

13537-33-2 Suppliers

Recommended suppliersmore

  • Product
  • FOB Price
  • Min.Order
  • Supply Ability
  • Supplier
  • Contact Supplier

13537-33-2 Usage

Description

Fluorosilane is a chemical compound that consists of silicon, fluorine, and hydrogen atoms. It is known for its unique properties, such as high reactivity and strong bonding capabilities with various materials.

Uses

Used in Semiconductor Industry:
Fluorosilane is used as a precursor in the chemical vapor deposition (CVD) process for the production of silicon-based semiconductor materials. Its high reactivity allows for the formation of thin films and coatings with precise control over their composition and properties.
Used in Glass Industry:
Fluorosilane is used as a surface treatment agent for glass materials. It enhances the surface properties of glass, such as hydrophobicity, oleophobicity, and anti-reflective properties, making it suitable for applications in automotive windshields, architectural glass, and display devices.
Used in Coatings and Adhesives Industry:
Fluorosilane is used as a coupling agent in the formulation of coatings and adhesives. It improves the adhesion of these materials to various substrates, such as metals, plastics, and ceramics, by forming strong chemical bonds between the coating/adhesive and the substrate.
Used in Photovoltaic Industry:
Fluorosilane is used in the manufacturing of solar cells as an etching agent for silicon wafers. It helps in creating a textured surface on the silicon wafer, which increases light absorption and improves the overall efficiency of the solar cell.
Used in Chemical Vapor Deposition (CVD) Process:
Fluorosilane is used as a reactant in the CVD process for depositing thin films of various materials, such as silicon dioxide, silicon nitride, and silicon carbide. Its high reactivity and ability to form volatile compounds make it an ideal choice for this application.
Chemical Properties:
Fluorosilane exhibits unique chemical properties, such as an enthalpy of vaporization of 18.8 kJ/mol and an entropy of vaporization of 107.9 kJ/(m·K). These properties contribute to its high reactivity and ability to form strong bonds with various materials, making it suitable for a wide range of applications across different industries.

Check Digit Verification of cas no

The CAS Registry Mumber 13537-33-2 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,3,5,3 and 7 respectively; the second part has 2 digits, 3 and 3 respectively.
Calculate Digit Verification of CAS Registry Number 13537-33:
(7*1)+(6*3)+(5*5)+(4*3)+(3*7)+(2*3)+(1*3)=92
92 % 10 = 2
So 13537-33-2 is a valid CAS Registry Number.
InChI:InChI=1/FH3Si/c1-2/h2H3

13537-33-2Relevant articles and documents

Doppler-limited dye laser excitation spectroscopy of the >A (000)->A'(000) band of HSiF

Suzuki, Tetsuo,Hakuta, Kohzo,Saito, Shuji,Hirota, Eizi

, p. 3580 - 3583 (1985)

The >A (000)->A'(000) band of HSiF was observed by Doppler-limited dye laser excitation spectroscopy.The HSiF molecule was produced by the reaction of SiH3F with microwave discharge products of CF4.The observed spectrum was found to be almost free of perturbations and was readily assigned to about 1300 transitions of Ka' - Ka = 5-6, 4-5, 3-4, 2-3, 1-2, 0-1,1-0, 2-1, 3-2, 4-3, 5-4, 0-0,1-1, and 2-0.A least-squares analysis of the observed spectrum yielded the rotational constants and the centrifugal distortion constants for both the and states.The molecular structure was discussed using the observed rotational constants.

Rotational state-specific dynamics of SiF C2Δ-B2Σ+ collision-induced transfer

Jackson, Neil A.,Randall, Colin J.,McKendrick, Kenneth G.

, p. 51 - 59 (2007/10/03)

Laser excitation on the C2Δ-X2Π transition was used to prepare discrete rotational levels of the SiF C2Δ, υ = 0 state, allowing their state-specific collisional behavior to be investigated. Time- and wavelength-resolved returning C-X fluorescence spectra established that the initial populations were only partially perturbed by rotationally inelastic processes within the C2Δ state at the typical pressures of our experiments. Transfer within the F1 manifold appears to be favored by a factor of ~2 over transfer from F1 to F2. There is relatively little dependence on rotational state (in the range j = 2.5-21.5) of the rate constant for total collisional removal of the C2Δ state by either H2 or N2. As previously established, a fraction of the collisionally removed population is deposited in the lower-lying B2Σ+ state. Dispersed B-X fluorescence spectra revealed broad rotational distributions in the predominant B2Σ+, υ′ = 0 product level in collisions with H2 and N2, indicating substantial release of rotational energy during the transfer between electronic states. There is a positive correlation between the peak and average product j′ and the initial rotational state j. The main features of the observed behavior are reproduced by a limiting impulsive model. We believe this to be a consequence of the respective valence and Rydberg characters of the C2Δ and B2Σ+ states.

Large rotational energy release in collision-induced SIF C(2)Δ-B(2)Σ(+) valence-Rydberg transfer

Jackson, Neil A.,Watson, Cameron W.,McKendrick, Kenneth G.

, p. 564 - 570 (2008/10/08)

Distinct rotational population distributions were prepared in SiF C(2)Δ, v=0 radicals by laser excitation. Collisions with H2 or N2 transferred a fraction of the C(2)Δ molecules to the lower-lying B(2)Σ(+) state. B-X fluorescence spectra revealed the nasc

Post a RFQ

Enter 15 to 2000 letters.Word count: 0 letters

Attach files(File Format: Jpeg, Jpg, Gif, Png, PDF, PPT, Zip, Rar,Word or Excel Maximum File Size: 3MB)

1

What can I do for you?
Get Best Price

Get Best Price for 13537-33-2