14067-07-3Relevant articles and documents
Ionization probability of Si+ ion emission from clean Si under Ar+ bombardment
Low,Huan,Wee,Tan
, p. 9427 - 9433 (1997)
The secondary-ion intensity of sputtered Si has been measured as a function of the emission energy using a previously calibrated mass analyser. From the Sigmund-Thompson energy distribution for neutrals, the ionization probability R+ for Si+ ions is inferred. It is found that the behaviour of R+ at high emission energies is consistent with neutralization via the electron tunnelling mechanism (resonant electrons tunnelling from the substrate to the outgoing ions). The possibility of electronic excitations induced by the collision cascade in Sroubek's model is also considered.
Selected ion flow drift tube studies of the reactions of Si+(2P) with HCI, H2O, H2S, and NH3: Reactions which produce atomic hydrogen
Glosik, J.,Zakouril, P.,Lindinger, W.
, p. 6490 - 6497 (1995)
The reaction rate coefficients, k, for the reactions of ground-state Si+(2P) with HCl, H2O, H2S, and NH3, have been measured as a function of reactant ion/reactant neutral center-of-mass kinetic energy, KECM, in a selected ion flow drift tube (SIFDT) apparatus, operated with helium at a temperature 298+/-2 K.The values k of the studied reactions have very pronounced, negative energy dependencies; the rate coefficients decrease by about 1 order of magnitude as KECM increase from near thermal values to ca. 2 eV.The results are interpreted in terms of a simple model assuming the reactions to proceed via the formation of long-lived complexes.These intermediate complexes decompose back to reactants or forward to products, the unimolecular decomposition rate coefficients for these reactions being k1 and k2, respectively.It is found that a power law of the form k-1/k2=const(KECM)m closely describes each reaction.
Photoionisation Mass-spectrometric Study of Fragmentation of SiBr4 and GeBr4 in the Range 400-1220 Angstroem
Creasey, Jeremy C.,Lambert, Ian R.,Tuckett, Richard P.,Codling, Keith,Frasinski, Leszek J.,et al.
, p. 3717 - 3724 (2007/10/02)
The non-radiative decay channels of the valence electronic states of SiBr4+ and GeBr4+ have been studied in the range 1220-400 Angstroem (10-31 eV) by photoionisation mass spectrometry.Ion-yield curves for the parent ions and for MBr3+, MBr2+, MBr+, M+ and Br+ (M = Si, Ge) have been obtained, as well as the relative photoionisation branching rations.The appearance thresholds for SiBr3+ and GeBr3+ occur at 11.31 and 10.97 eV, respectively.They lie within the Franck-Condon region of the ground state of SiBr4+ and GeBr4+, and are at the thermodynamic thresholds for SiBr3+ + Br and GeBr3+ + Br.The smaller fragment ions have appearance thresholds which relate to energies for excited electronic states of SiBr4+ and GeBr4+, and not to the lower-lying thermodynamic energy of the fragment ion.The results are discussed with reference to our earlier work on radiative decay from excited states of SiBr4+ and GeBr4+ (J.Chem.Soc.Faraday Trans., 1990, 86, 2021).We have obtained a new value for the ionisation potential of SiBr3 of 7.6 +/- 0.4 eV, and we suggest that the previously accepted value for SiBr2 (12 +/- 1 eV) is ca. 3.5 eV too high.
