10026-04-7 Usage
Physical Properties
Colorless fuming liquid; suffocating odor; density 1.52 g/mL; freezes at –68.9°C; boils at 57.7°C; vapor pressure 235 torr at 25°C; critical temperature 235°C; critical pressure 35.45 atm; critical volume 326 cm3/mol; decomposes in water forming silicic acid and HCl; soluble in benzene, toluence, chloroform, and ether.
Uses
Different sources of media describe the Uses of 10026-04-7 differently. You can refer to the following data:
1. Silicon tetrachloride was first prepared by Berzelius in 1823. It is used widely in preparing pure silicon and many organosilicon compounds such as silicone. It also is used to produce smoke screens in warfare.
2. . Silicon tetrachloride (SiCl4) may be used as an intermediate in the manufacture of high purity silicon. High purity silicon derived from silicon tetrachloride may find major applications in the semiconductors industry and photovoltaic cells.
. High purity SiCl4 may be used to manufacture of optical fibers.
3. Silicon tetrachloride (SiCl4), produced when both silicon and chlorine are combined at high
temperatures, is used by the military to produce smoke screens.
4. Chlorosilanes are chemical intermediates used in the production
of silicon and silicon-containing materials, and in the
semiconductor industry; they are also protecting agents for
intermediates in pharmaceutical syntheses. The most important
industrially utilized silicon halides are trichlorosilane and
silicon tetrachloride.
Silicon tetrachloride (SiCl4) can be manufactured by chlorination
of silicon compounds such as ferrosilicon or silicon
carbide, or by heating silicon dioxide and carbon in a stream of
chlorine. It can also be obtained as a by-product in the
production of zirconium tetrachloride, and in the past
substantial quantities were produced by this route, which in
recent decades has lost importance owing to the reduced
demand for zirconium in nuclear facilities. Nowadays, industrial
silicon tetrachloride is produced either by direct reaction of
hydrogen chloride with silicon – this product mainly being
employed as an intermediate in fumed silica production – or as
the by-product of the production of silane for the microelectronics
industry by disproportionation of trichlorosilane.
5. Tetrachlorosilane, can be used as a coupling agent for the synthesis of amine from carboxylic acid and an amide. It can also be used in preparation of high purity silicon, used in photovoltaic cells, and in the semiconductors industry.
Preparation
Silicon tetrachloride is prepared by heating silicon dioxide and carbon in a stream of chlorine:
SiO2 + C + 2Cl2 → SiCl4 + CO2
Also, the compound may be prepared by heating silicon with chlorine or dry hydrogen chloride:
Si + 2Cl2 → SiCl4
Si + 4HCl → SiCl4 + 2H2
Reactions
Silicon tetrachloride decomposes in water forming silicic acid (precipitated silica) and hydrochloric acid:
SiCl4 + 3H2O → H2SiO3 + 4HCl
Reactions with alcohols yield esters of orthosilicic acid. For example, with ethanol the product is tetraethyl orthosilicate or tetraethoxysilane, Si(OC2H5)4:
SiCl4 + 4C2H5OH → Si(OC2H5)4 + 4HCl
An important class of organosilicon compounds known as silicones that are used as lubricants, resins, elastomers, and antifoaming agents in high-vacuum diffusion pumps are synthesized from silicon tetrachloride. Silicon tetrachloride reacts with Grignard reagents, RMgCl to form monoalkyltrichlorosilanes, RSiCl3, dialkyldichlorosilanes, R2SiCl2, trialkylmonochlorosilanes, R3SiCl, and tetraalkylsilanes, R4Si:
SiCl4 + RMgCl → RSiCl3 + MgCl2
SiCl4 + 2RMgCl → R2SiCl2 + 2MgCl2
SiCl4 + 3RMgCl → R3SiCl + 3MgCl2
SiCl4 + 4RMgCl → R4Si + 4MgCl2
The alkylchlorosilanes on hydrolysis form various types of silicones. For example, hydrolysis of trialkylmonochlorosilanes yields sylil ethers, R3SiOSiR3, which form silicones:
2R3SiCl + H2O → R3SiOSiR3 + 2HCl
Silicon tetrachloride reacts with diethylzinc to form tetraethylsilane. This compound was synthesized by Friedel and Crafts in 1863, the first organosilicon compound:
SiCl4 + 2Zn(C2H5)2 → Si(C2H5)4 + 2ZnCl2
Silicon tetrachloride reacts with alkyl chloride and sodium to form thesame tetraalkylsilane:
SiCl4 + 4C2H5Cl + 8Na → Si(C2H5)4 + 8NaCl
Silicon tetrachloride reacts with acetic anhydride to form silicon tetraacetate (tetraacetoxysilane). This reaction was discovered by Friedel and Ladenburg in 1867:
SiCl4 + 4(CH3CO)2O → (CH3COO)4Si + 4CH3COCl
Silicon tetraacetate can also be made by the reaction of silicon tetrachloride with sodium acetate. In general any carboxylate salt of silicon can be prepared from silicon tetrachloride by this reaction:
SiCl4 + 4CH3COO Na → (CH3COO)4Si + 4NaCl
Ladenburg in 1873 synthesized phenyltrichlorosilane, C6H5SiCl3 by heating silicon tetrachloride with diphenylmercury:
SiCl4 + (C6H5)2 Hg → C6H5SiCl3 + C6H5HgCl
Silicon tetrachloride undergoes addition with olefinic and acetylenic unsaturated hydrocarbons. In these addition reactions, one chlorine atom adds to one carbon atom of the double or triple bond while the rest of the unit —SiCl3 attaches to the other carbon atom forming a silicon—carbon bond:
SiCl4 + H2C=CH2 → ClCH2—CH2SiCl3
SiCl4 + HC≡CH → ClCH=CHSiCl3
Silicon tetrachloride is reduced to metallic silicon when heated with sodium, potassium, and a number of metals:
SiCl4 + Mg → Si + MgCl2
It reacts with carbon monoxide to form a compound with a silicon carbon bond:
SiCl4 + CO → ClC(=O)SiCl3
Reaction with excess amine forms amine derivatives of silicon:
SiCl4 + HN(CH3)2 → Si[N(CH3)2]4 + 4HN(CH3)2?HCl
Toxicity
The vapors are very toxic and irritating to the eyes, throat, and mucous membrane.
Description
Chlorosilanes (general formula RnHmSiCl4-n-m, where R is an
alkyl, aryl, or olefin group) are compounds in which silicon is
bound to between one and four chlorine atoms, bonds with
hydrogen and/or organic groups making its total number of
bonds up to four. Chlorosilanes react with water, moist air, and
steam, producing heat and toxic, corrosive hydrogen chloride
fumes. Contact between gaseous hydrogen chloride and metals
may release gaseous hydrogen, which is inflammable and
explosive. Chlorosilanes react vigorously with oxidizing agents,
alcohols, strong acids, strong bases, ketones, and aldehydes.
Chemical Properties
Clear colorless liquid
Production Methods
Manufactured directly by the reaction of chlorine on silicon
metal or ferrosilicon at 500C or silicon carbide.
General Description
Tetrachlorosilane is a colorless, fuming liquid with a pungent odor. Tetrachlorosilane is decomposed by water to hydrochloric acid with evolution of heat. Tetrachlorosilane is corrosive to metals and tissue in the presence of moisture. Tetrachlorosilane is used in smoke screens, to make various silicon containing chemicals, and in chemical analysis.
Reactivity Profile
Chlorosilanes, such as Tetrachlorosilane, are compounds in which silicon is bonded to from one to four chlorine atoms with other bonds to hydrogen and/or alkyl groups. Chlorosilanes react with water, moist air, or steam to produce heat and toxic, corrosive fumes of hydrogen chloride. They may also produce flammable gaseous H2. They can serve as chlorination agents. Chlorosilanes react vigorously with both organic and inorganic acids and with bases to generate toxic or flammable gases. Tetrachlorosilane is incompatible with alkali metals and dimethyl sulfoxide.
Hazard
Toxic by ingestion and inhalation, strong
irritant to tissue.
Health Hazard
Inhalation causes severe irritation of upper respiratory tract resulting in coughing, choking, and a feeling of suffocation; continued inhalation may produce ulceration of the nose, throat, and larynx; if inhaled deeply, edema of the lungs may occur. Contact of liquid with eyes causes severe irritation and painful burns; may cause permanent visual impairment. Liquid may cause severe burns of skin. Repeated skin contact with dilute solutions or exposure to concentrated vapors may cause dermatitis. Ingestion causes severe internal injury with pain in the throat and stomach, intense thirst, difficulty in swallowing, nausea, vomiting, and diarrhea; in severe cases, collapse and unconsciousness may result.
Fire Hazard
Behavior in Fire: Contact with water in foam applied to adjacent fires will produce irritating fumes of hydrogen chloride.
Flammability and Explosibility
Notclassified
Safety Profile
Mildly toxic by inhalation. A corrosive irritant to eyes, skin, and mucous membranes. Reacts with water to form HCl. Violent reaction with Na, K. When heated to decomposition it emits toxic fumes of Cl-. See also CHLOROSILANES.
Environmental Fate
Studies of rats subjected to acute inhalation of 10 structurally
similar chlorosilanes, including tetrachlorosilane, suggest that
the acute toxicity of chlorosilanes is largely due to the hydrogen
chloride hydrolysis product. The observed effects were similar
to those of HCl inhalation both qualitatively (clinical signs)
and quantitatively (molar equivalents of hydrogen chloride at
the atmospheric LC50).
Purification Methods
Distil it under vacuum and store it in sealed ampoules under N2. It fumes in moist air and is very sensitive to moisture. It is soluble in organic solvents. It is a strong irritant. [Schenk in Handbook of Preparative Inorganic Chemistry (Ed. Brauer) Academic Press Vol I pp 682-683 1963.]
Toxicity evaluation
Silicon tetrachloride is a colorless, noninflammable, volatile
liquid with a pungent, suffocating odor. It fumes in air and is
corrosive to metals and tissues in the presence of moisture. In
experiments at Argonne National Laboratory in which it was
mixed with water and stirred under room conditions, about
35% of the theoretical yield of HCl evolved as a gas in the first
minute. It also reacts very rapidly with alcohols, primary and
secondary amines, ammonia, and other compounds containing
active hydrogen atoms. Thermal decomposition or burning
may produce dense white clouds of silicon oxide particles and
hydrogen chloride.
Silicon tetrachloride is a by-product in the production of
polysilicon, the key component of sunlight-capturing wafers in
solar energy panels, and for each ton of polysilicon produced,
at least four tons of silicon tetrachloride liquid waste are
generated. Pollution by silicon tetrachloride has been reported
in China, associated with the increased demand for photovoltaic
cells that has been stimulated by subsidy programs.
Check Digit Verification of cas no
The CAS Registry Mumber 10026-04-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,0,0,2 and 6 respectively; the second part has 2 digits, 0 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 10026-04:
(7*1)+(6*0)+(5*0)+(4*2)+(3*6)+(2*0)+(1*4)=37
37 % 10 = 7
So 10026-04-7 is a valid CAS Registry Number.
InChI:InChI=1/4ClH.Si/h4*1H;/q;;;;+4/p-4
10026-04-7Relevant articles and documents
Trimethyl- and trichlorosilylcobalt tetracarbonyls and the hydrosilation of ethylene
Baay, Yvonne Louise,MacDiarmid, Alan G.
, p. 986 - 994 (1969)
The new compound (CH3)3SiCo(CO)4 was synthesized by the reaction of (CH3)3SiH with either Co2(CO)8 or HCo(CO)4. The interaction of Cl3SiH or CH3S
Preparation of Hexafluorodisilane and Reactions of Hexafluorodisilane and Hexachlorodisilane with Sulfur Trioxide
Suresh, Bettadapura Srinivasaiah,Padma, Doddaballapur Krishnamurthy
, p. 1867 - 1868 (1985)
Hexafluorodisilane has been prepared by the fluorination of hexachlorodisilane or hexabromodisilane by potassium fluoride in boiling acetonitrile, in yields approximating 45 and 60percent respectively.Hexafluorodisilane has been characterised by infrared
Tris(trichlorosilyl)tetrelide Anions and a Comparative Study of Their Donor Qualities
Teichmann, Julian,Kunkel, Chantal,Georg, Isabelle,Moxter, Maximilian,Santowski, Tobias,Bolte, Michael,Lerner, Hans-Wolfram,Bade, Stefan,Wagner, Matthias
, p. 2740 - 2744 (2019)
Trichlorosilylated tetrelides [(Cl3Si)3E]? have been prepared by adding 1 equiv of a soluble Cl? salt to (Cl3Si)4Si (E=Si) or 4 Si2Cl6/GeCl4 (E=Ge). To asse
Nonclassical complex of dichlorosilylene with CO: direct spectroscopic detection
Boganov, S. E.,Egorov, M. P.,Lalov, A. V.,Promyslov, V. M.,Syroeshkin, M. A.
, p. 1084 - 1092 (2021)
A complex between SiCl2 and CO of the 1:1 composition with coordination of the silylene to the C atom of carbon monoxide is detected in Ar matrices using FTIR spectroscopy. A positive shift of the ν(CO) band of the complex relative to the corre
Interactions of chloromethyldisilanes with tetrakis(dimethylamino)ethylene (TDAE), formation of [TDAE] [Si3Me2Cl7]
Knopf,Herzog,Roewer,Brendler,Rheinwald,Lang
, p. 14 - 22 (2002)
The chlorodisilanes SiClMe2-SiClMe2 (1), SiCl2Me-SiCl2Me (2), SiCl3-SiCl3 (3) and a 9:1 mixture of 2 and SiCl3-SiCl2Me (4) were reacted with the electron-rich alkene tetrakis-(dimethylamino)-ethylene (TDAE) in n-hexane as well as in polar solvents. While 1 gave no reaction at all, 3 underwent a disproportionation reaction into SiCl4 and Si(SiCl3)4. Also 2 and mixtures of 2 and 4 were disproportionated into MeSiCl3 (2a) and methylchlorooligosilanes. Additionally a crystalline mixture of Si3Me3Cl6 -TDAE (5a) plus Si3Me2Cl7 -TDAE (5b) was obtained by reaction of a 9:1 mixture of 2 and 4 with TDAE in n-hexane as well as in 1,2-dimethoxyethane. The reaction of 2 with TDAE in acetonitrile (MeCN) led to a crystalline precipitation of [TDAE]Cl2 -MeCN (6.MeCN) in addition to MeSiCl3 and methylchlorooligosilanes. The structures of 5b and 6.MeCN were determined by X-ray crystallography beside their NMR and IR spectroscopic characterization. Compound 5b crystallizes in the monoclinic space group P2/c (Z = 4), 6.MeCN in the orthorhombic space group Pna21 (Z = 4). The structure of 5b reveals a [TDAE].+ radical cation and a 1, 2-Me2Si3Cl7- anion with a pentacoordinated central silicon atom.
Gillot, B.,Souha, H.,Viale, D.
, (1992)
Dyke, J. M.,Lee, E. P. F.,Morris, A.,Nyulaszi, L.
, p. 175 - 188 (1993)
A vapor-solid strategy to silica sheathed metal nanostructures and microstructures via reactions of metal chlorides with silicon
Wang, Jin,Zhang, Haoxu,Ge, Jianping,Li, Yadong
, p. 807 - 811 (2006)
A facile vapor-solid strategy has been developed to prepare silica-sheathed metal micro/nanostructures with controllable shapes. As examples, silica-sheathed nickel nanowires (diameter ~50 nm), microcubes (edge length 1-3 μm), nanocubes (edge length ~200 nm) with an epitaxial tail (diameter 2 structures are discussed. The method is expected to be applied to a wider range of metals.
Etching of hexagonal SiC surfaces in chlorine-containing gas media at ambient pressure
Zinovev,Moore,Hryn,Pellin
, p. 2242 - 2251 (2006)
The modification of the silicon carbide (4H-SiC) single-crystal surface in a chlorine-containing gas mixture at high temperature (800-1000 °C) and ambient pressure was investigated. The results of silicon carbide chlorination are found to strongly depend on the hexagonal surface orientation. Due to the thermodynamically more favorable reaction of chlorine with silicon rather than carbon, the C-terminated side ( 0 0 0 over(1, -) ) clearly undergoes considerable changes, resulting in coverage by a black-colored carbon film, whereas the Si-side (0 0 0 1) surprisingly remains visually untouched. With using X-ray photoelectron spectroscopy (XPS), angle-resolved XPS and SEM it is shown that this drastic change in behavior is associated with a different structure of oxicarbide/silicate adlayer formed on the C- and Si-terminated sides of silicon carbide surface during experimental pre-treatment and air exposure. The presence of oxygen bridges connecting the silicate adlayer with the bulk SiC in the case of Si-side inhibits the chlorination reaction and makes this surface strongly resistant to chlorine attack. Only some places on the Si-terminated side demonstrate traces of chlorine etching in the form of hexagonal-shaped voids, which are possibly initiated by distortion of the initial crystalline structure by micropipes. In contrast, a thin carbon layer resulted on the C-terminated side as a consequence of the chlorination process. XPS, ARXPS, SEM and Raman spectroscopy study of created film allows us to argue that it consists mainly of sp2-bonded carbon, mostly in the form of nanoscale graphene sheets. The absence of a protective oxygen bridge between the silicate adlayer and the bulk silicon carbide crystal leads to unlimited growth of carbon film on the SiC ( 0 0 0 over(1, -) ) side.
Souha, H.,Weber, G.,Gillot, B.
, p. 215 - 222 (1990)
Reactivity of Cu3Si of different genesis towards copper(I) chloride
Souha,Bernard,Gaffer,Gillot
, p. 71 - 77 (2000)
A comparative study of the reactivity between copper(I) chloride and three types of Cu3Si obtained in a molten medium (Cu3Si-Ref) and from mechanical activation following an annealing process (Cu3Si-M2AP) or a self-propagating high-temperature synthesis (Cu3Si-MASHS) was performed by thermogravimetry under vacuum using non-isothermal and isothermal methods of kinetic measurement. It was established that for the three Cu3Si/CuCl systems, the acceleration and decay stages in the temperature range 145-215°C are very closely approximated by an equation of the Prout-Tompkins type where an autocatalytic process was proposed. The lower apparent activation energy obtained for the Cu3Si-MASHS/CuCl system (63 kJ mol-1 against 68 and 78 kJ mol-1 for Cu3Si-M2AP and Cu3Si-Ref, respectively) has been attributed to a small grain size which induces nanoscale contacts between reactants and impedes CuCl to sublime. (C) 2000 Elsevier Science B.V.
A Mild One-Pot Reduction of Phosphine(V) Oxides Affording Phosphines(III) and Their Metal Catalysts
Kapu?niak, ?ukasz,Plessow, Philipp N.,Trzybiński, Damian,Wo?niak, Krzysztof,Hofmann, Peter,Jolly, Phillip Iain
supporting information, p. 693 - 701 (2021/04/06)
The metal-free reduction of a range of phosphine(V) oxides employing oxalyl chloride as an activating agent and hexachlorodisilane as reducing reagent has been achieved under mild reaction conditions. The method was successfully applied to the reduction of industrial waste byproduct triphenylphosphine(V) oxide, closing the phosphorus cycle to cleanly regenerate triphenylphosphine(III). Mechanistic studies and quantum chemical calculations support the attack of the dissociated chloride anion of intermediated phosphonium salt at the silicon of the disilane as the rate-limiting step for deprotection. The exquisite purity of the resultant phosphine(III) ligands after the simple removal of volatiles under reduced pressure circumvents laborious purification prior to metalation and has permitted the facile formation of important transition metal catalysts.
Method for producing chloropropyltrichlorosilane
-
Paragraph 0038-0049; 0053-0059, (2020/03/14)
The invention provides an industrial production method of trichloro(3-chloropropyl)silane. A trichloro(3-chloropropyl)silane addition reaction coarse product is used as reaction substrates; the raw material reactants of chloropropene and trichlorosilane a