141-96-8

Usage

Uses

Used in Plastic and Rubber Industries:
Potassium O-sec-butyl dithiocarbonate is used as a chain transfer agent in emulsion polymerization processes for controlling the molecular weight and distribution of polymers. Its application contributes to the improvement of processability and mechanical properties of the resulting polymers, enhancing their performance in various applications.
Used in Specialty Coatings, Adhesives, and Sealants Development:
Due to its chemical reactivity and compatibility with different resins and monomers, potassium O-sec-butyl dithiocarbonate is utilized in the development of specialty coatings, adhesives, and sealants. Its incorporation into these formulations allows for the creation of products with improved performance characteristics, such as adhesion, durability, and resistance to environmental factors.

InChI:InChI=1/C5H10OS2/c1-3-4(2)6-5(7)8/h4H,3H2,1-2H3,(H,7,8)

Upstream product

• 78-92-2 iso-butanol 
• 75-15-0 carbon disulfide 

Downstream Products

• 1861-51-4 O-Butyl-⁽²⁾-S-(4-brom-phenacyl)-dithiocarbonat 
• 136490-78-3 S-(4-nitrobenzoyl)-O-sec-butyldithiocarbonate 
• 136490-72-7 Nsec-butoxythiocarbonyl-N-methyl aniline 

Relevant academic research and scientific papers

Important Phase Control of Indium Sulfide Nanomaterials by Choice of Indium(III) Xanthate Precursor and Thermolysis Temperature

Four In(III) xanthate complexes, [In(S2COR)3] where R = Me, Et, iPr and sBu, respectively, were synthesized, characterized and subsequently used as single source molecular precursors via a solventless thermolysis route to obtain indium sulfide materials. By choice of precursor and reaction temperature crystalline powders of tetragonal In2S3, cubic In2S3 and cubic In2.77S4 were acquired. The phase identification and purity were conducted through examination of the experimental powder X-ray diffraction patterns relative to the simulated patterns for single X-ray crystal diffraction.

Accessing γ-Ga2S3 by solventless thermolysis of gallium xanthates: A low-temperature limit for crystalline products

Alkyl-xanthato gallium(iii) complexes of the form [Ga(S2COR)3], where R = Me (1), Et (2), iPr (3), nPr (4), nBu (5), sBu (6) and iBu (7), have been synthesized and fully characterised. The crystal structures for 1 and 3-7 have been solved and examined to elucidate if these structures are related to their decomposition. Thermogravimetric analysis was used to gain insight into the decomposition temperatures for each complex. Unlike previously explored metal xanthate complexes which break down at low temperatures (2S3 was the sole product formed. In the case of R = Me, Chugaev elimination did not occur and amorphous GaxSy products were formed. We conclude therefore that the low-temperature synthesis route offered by the thermal decomposition of metal xanthate precursors, which has been reported for many metal sulfide systems prior to this, may not be appropriate in the case of gallium sulfides.