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  • 1471985-06-4 Structure
  • Basic information

    1. Product Name: C61H58N6O9
    2. Synonyms: C61H58N6O9
    3. CAS NO:1471985-06-4
    4. Molecular Formula:
    5. Molecular Weight: 1019.17
    6. EINECS: N/A
    7. Product Categories: N/A
    8. Mol File: 1471985-06-4.mol
  • Chemical Properties

    1. Melting Point: N/A
    2. Boiling Point: N/A
    3. Flash Point: N/A
    4. Appearance: N/A
    5. Density: N/A
    6. Refractive Index: N/A
    7. Storage Temp.: N/A
    8. Solubility: N/A
    9. CAS DataBase Reference: C61H58N6O9(CAS DataBase Reference)
    10. NIST Chemistry Reference: C61H58N6O9(1471985-06-4)
    11. EPA Substance Registry System: C61H58N6O9(1471985-06-4)
  • Safety Data

    1. Hazard Codes: N/A
    2. Statements: N/A
    3. Safety Statements: N/A
    4. WGK Germany:
    5. RTECS:
    6. HazardClass: N/A
    7. PackingGroup: N/A
    8. Hazardous Substances Data: 1471985-06-4(Hazardous Substances Data)

1471985-06-4 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 1471985-06-4 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,4,7,1,9,8 and 5 respectively; the second part has 2 digits, 0 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 1471985-06:
(9*1)+(8*4)+(7*7)+(6*1)+(5*9)+(4*8)+(3*5)+(2*0)+(1*6)=194
194 % 10 = 4
So 1471985-06-4 is a valid CAS Registry Number.

1471985-06-4Downstream Products

1471985-06-4Relevant articles and documents

Toward oriented surface architectures with three coaxial charge-transporting pathways

Sforazzini, Giuseppe,Orentas, Edvinas,Bolag, Altan,Sakai, Naomi,Matile, Stefan

, p. 12082 - 12090 (2013/09/02)

We report a synthetic method to build oriented architectures with three coaxial π-stacks directly on solid surfaces. The approach operates with orthogonal dynamic bonds, disulfides and hydrazones, self-organizing surface-initiated polymerization (SOSIP), and templated stack-exchange (TSE). Compatibility with naphthalenediimides, perylenediimides, squaraines, fullerenes, oligothiophenes, and triphenylamine is confirmed. Compared to photosystems composed of two coaxial channels, the installation of a third channel increases photocurrent generation up to 10 times. Limitations concern giant stack exchangers that fail to enter SOSIP architectures (e.g., phthalocyanines surrounded by three fullerenes), and planar triads that can give folded or interdigitated charge-transfer architectures rather than three coaxial channels. The reported triple-channel surface architectures are as sophisticated as it gets today, the directionality of their construction promises general access to multichannel architectures with multicomponent gradients in each individual channel. The reported approach will allow us to systematically unravel the ultrafast photophysics of molecular dyads and triads in surface architectures, and might become useful to develop conceptually innovative optoelectronic devices.

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