18416-07-4

Basic information

• Product Name: DI-N-OCTYLDICHLOROSILANE
• Synonyms: DI-N-OCTYLDICHLOROSILANE;Dioctyldichlorosilane;Dichlorodi-n-octylsilane;Dichlorodioctylsilane;NSC 65458;Dichlorodi-n-octylsilane
• CAS NO: 18416-07-4
• Molecular Formula: C₁₆H₃₄Cl₂Si
• Molecular Weight: 325.43
• Mol File: 18416-07-4.mol
• Article Data: 2

Chemical Properties

• Melting Point: <0°C
• Boiling Point: 145 °C
• Flash Point: >110°C
• Appearance: Colorless to pale yellow/Liquid
• Density: 0.94
• Vapor Pressure: 0.000171mmHg at 25°C
• Refractive Index: n20/D1.456
• Solubility: Sparingly Soluble (8.8E-6 g/L) at 25°C.
• Sensitive: Moisture Sensitive
• CAS DataBase Reference: DI-N-OCTYLDICHLOROSILANE(CAS DataBase Reference)
• NIST Chemistry Reference: DI-N-OCTYLDICHLOROSILANE(18416-07-4)
• EPA Substance Registry System: DI-N-OCTYLDICHLOROSILANE(18416-07-4)

Safety Data

• Hazard Codes: C
• Statements: 34
• Safety Statements: 26-36/37/39-45
• RIDADR: 2987
• WGK Germany: 3
• TSCA: No
• HazardClass: 8
• PackingGroup: II
• Hazardous Substances Data: 18416-07-4(Hazardous Substances Data)

Usage

Uses

Different sources of media describe the Uses of 18416-07-4 differently. You can refer to the following data:
1. Di-n-octyldichlorosilane is used in the synthesis of organic photovoltaics.
2. Di-n-octyldichlorosilane is used in the synthesis of organic photovoltaics. It is also used in medicine field, electronic industry and polymer material.

InChI:InChI=1/C16H34Cl2Si/c1-3-5-7-9-11-13-15-19(17,18)16-14-12-10-8-6-4-2/h3-16H2,1-2H3

Upstream product

• 10026-04-7 tetrachlorosilane 
• 17049-49-9 octylmagnesium bromide 
• 3449-28-3 di-n-butyldichlorosilane 
• 5283-66-9 octyltrichlorosilane 

Downstream Products

• 1160106-12-6 4,4′-bis-(n-octyl)-dithieno[3,2-b:2′,3′-d]silol 
• 1160106-14-8 4,4’-bis(octyl)-5,5’-dibromo-dithieno[3,2-b:2',3'-d]silole 
• 958293-23-7 5,5-dioctyl-3,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)-5H-dibenzo[b,d]silole 
• 891182-24-4 3,7-dibromo-5,5-di-n-octyl-dibenzo[b,d]silole 
• 111-87-5 octanol 

Relevant articles and documents

Dynamics of Positive Charge Carriers on Si Chains of Polysilanes

The transient absorption of radical cations of a variety of substituted polysilanes is discussed quantitatively in terms of the molar extinction coefficient and oscillator strength by nanosecond pulse radiolysis. Oxygen-saturated polysilane solutions in benzene exhibit a strong transient absorption band ascribed to the polysilane radical cation. The transient species react with N,N,N′,N′-tetramethyl-p-phenylenediamine (TMPD) to produce TMPD radical cations. On the basis of the molar extinction coefficient of the TMPD radical cation, the molar extinction coefficients for the radical cations of polysilanes are found to increase in the range 3.3 × 104 to 2.0 × 105 M-1 cm -1 with increasing polymer segment length. The stepwise increase in the total oscillator strength with an increase in the number of phenyl rings directly bonded to the Si skeleton suggests the delocalization of the positive polaron state and/or the SOMO state over the phenyl rings, indicating the importance of phenyl rings in intermolecular hole transfer processes.