891182-24-4

Basic information

• Product Name: 2,7-Dibromo-9,9-dioctyl-9H-9-silafluorene
• Synonyms: 2,7-Dibromo-9,9-dioctyl-9H-9-silafluorene;3,7-DibroMo-5,5-dioctyl-5H-dibenzo[b,d]silole;9H-9-Silafluorene, 2,7-dibroMo-9,9-dioctyl-;3,7-dibromo-5,5-di-n-octyl-dibenzo[b,d]silole
• CAS NO: 891182-24-4
• Molecular Formula: C₂₈H₄₀Br₂Si
• Molecular Weight: 564.51
• Mol File: 891182-24-4.mol
• Article Data: 6

Chemical Properties

• Appearance: /
• Density: 1.24
• Storage Temp.: Sealed in dry,Room Temperature
• CAS DataBase Reference: 2,7-Dibromo-9,9-dioctyl-9H-9-silafluorene(CAS DataBase Reference)
• NIST Chemistry Reference: 2,7-Dibromo-9,9-dioctyl-9H-9-silafluorene(891182-24-4)
• EPA Substance Registry System: 2,7-Dibromo-9,9-dioctyl-9H-9-silafluorene(891182-24-4)

Safety Data

• Hazardous Substances Data: 891182-24-4(Hazardous Substances Data)

Usage

General Description

2,7-Dibromo-9,9-dioctyl-9H-9-silafluorene, also known as SiF, is a chemical compound with a molecular formula of C24H36Br2Si. It is a silafluorene derivative that is commonly used as an electron-transporting material in organic electronic devices such as organic light-emitting diodes (OLEDs) and organic photovoltaic cells. SiF is known for its high thermal stability, high electron mobility, and good film-forming properties, making it a favorable choice for improving the performance of organic electronic devices. Additionally, its unique chemical structure allows for the manipulation of its optoelectronic properties, making it a promising candidate for future advancements in organic electronics.

Upstream product

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Downstream Products

• 958293-23-7 5,5-dioctyl-3,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)-5H-dibenzo[b,d]silole 

Relevant articles and documents

Double-(S, S - dioxo - dibenzo thiophene) and high output compound and its preparation method and application

The invention discloses a bi(S,S-dioxo-dibenzothiophene) five-membered ring compound and a preparation method and application thereof. The existence of bi-sulfuryl in the bi(S,S-dioxo-dibenzothiophene) five-membered ring compound is more beneficial for improving the electron affinity of molecules. Alkyl chains are introduced on a five-membered ring, so that the solubility of monomers in an organic solvent can be obviously improved. The plane conjugacy of the compound is better, and is beneficial for the transmission of a current carrier. Higher D-A mutual effect existing in the molecules of the compound endows higher fluorescence of the material. The bi(S,S-dioxo-dibenzothiophene) five-membered ring compound is synthesized and obtained through common organic chemistry reactions such as substitution reactions, Suzuki coupling and ring-closure reactions and oxidation reactions. The compound has good solubility in the organic solvent, and is suitable for solution processing. The compound has wide application prospects in the fields of organic luminescence display, organic photovoltaic cells and organic field-effect tubes.

Silole-containing polymers for high-efficiency polymer solar cells

Silole-containing conjugated polymers (P1 and P2) carrying methyl and octyl substituents, respectively, on the silicon atom were synthesized by Suzuki polycondensation. They show strong absorption in the region of 300-700 nm with a band gap of about 1.9 eV. The two silole-containing conjugated polymers were used to fabricate polymer solar cells by blending with PC61BM and PC71BM as the active layer. The best performance of photovoltaic devices based on P1/PC71BM active layer exhibited power conversion efficiency (PCE) of 2.72%, whereas that of the photovoltaic cells fabricated with P2/PC71BM exhibited PCE of 5.08%. 1,8-Diiodooctane was used as an additive to adjust the morphology of the active layer during the device optimization. PCE of devices based on P2/PC71BM was further improved to 6.05% when a TiOx layer was used as a hole-blocking layer.

Synthesis, characterization, and transistor response of semiconducting silole polymers with substantial hole mobility and air stability. Experiment and theory

Realizing p-channel semiconducting polymers with good hole mobility, solution processibility, and air stability is an important step forward in the chemical manipulation of charge transport in polymeric solids and in the development of low-cost printed electronics. We report here the synthesis and full characterization of the dithienosilole- and dibenzosilole-based homopolymers, poly(4,4-di-n-hexyldithienosilole) (TS6) and poly(9,9-di-n- octyldibenzosilole) (BS8), and their mono- and bithiophene copolymers, poly(4,4-di-n-hexyldithienosilole-alt-(bi)thiophene) (TS6T1, TS6T2) and poly(9,9-di-n-octyldibenzosilole-alt-(bi)thiophene) (BS8T1,BS8T2), and examine in detail the consequences of introducing dithienosilole and dibenzosilole cores into a thiophene polymer backbone. We demonstrate air-stable thin-film transistors (TFTs) fabricated under ambient conditions having hole mobilities as large as 0.08 cm2/V·s, low turn-on voltages, and current on/off ratios > 106. Additionally, unencapsulated TFTs fabricated under ambient conditions are air-stable, an important advance over regioregular poly(3-hexylthiophene) (P3HT)-based devices. Density functional theory calculations provide detailed insight into the polymer physicochemical and charge transport characteristics. A direct correlation between the hole injection barrier and both TFT turn-on voltage and TFT polymer hole mobility is identified and discussed, in combination with thin-film morphological characteristics, to explain the observed OTFT performance trends.