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891182-24-4

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891182-24-4 Usage

Description

2,7-Dibromo-9,9-dioctyl-9H-9-silafluorene, also known as SiF, is a silafluorene derivative with a molecular formula of C24H36Br2Si. It is a chemical compound that possesses high thermal stability, high electron mobility, and good film-forming properties, making it a favorable choice for use in organic electronic devices.

Uses

Used in Organic Light-Emitting Diodes (OLEDs):
2,7-Dibromo-9,9-dioctyl-9H-9-silafluorene is used as an electron-transporting material in OLEDs for its ability to improve the performance of these devices. Its unique chemical structure allows for the manipulation of its optoelectronic properties, contributing to enhanced device efficiency and stability.
Used in Organic Photovoltaic Cells:
In the field of organic photovoltaics, 2,7-Dibromo-9,9-dioctyl-9H-9-silafluorene serves as an electron-transporting material, playing a crucial role in the conversion of light into electricity. Its high electron mobility and thermal stability contribute to the overall performance and longevity of the photovoltaic cells.
Used in Advanced Organic Electronics:
2,7-Dibromo-9,9-dioctyl-9H-9-silafluorene is used as a key component in the development of advanced organic electronic devices due to its promising properties. Its potential for manipulating optoelectronic properties positions it as a candidate for future advancements in the field of organic electronics, driving innovation and improvements in device performance.

Check Digit Verification of cas no

The CAS Registry Mumber 891182-24-4 includes 9 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 6 digits, 8,9,1,1,8 and 2 respectively; the second part has 2 digits, 2 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 891182-24:
(8*8)+(7*9)+(6*1)+(5*1)+(4*8)+(3*2)+(2*2)+(1*4)=184
184 % 10 = 4
So 891182-24-4 is a valid CAS Registry Number.

891182-24-4SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 19, 2017

Revision Date: Aug 19, 2017

1.Identification

1.1 GHS Product identifier

Product name 3,7-dibromo-5,5-dioctylbenzo[b][1]benzosilole

1.2 Other means of identification

Product number -
Other names 2,7-dibromo-9,9-dioctyldibenzosilole

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:891182-24-4 SDS

891182-24-4Relevant articles and documents

Double-(S, S - dioxo - dibenzo thiophene) and high output compound and its preparation method and application

-

, (2019/06/26)

The invention discloses a bi(S,S-dioxo-dibenzothiophene) five-membered ring compound and a preparation method and application thereof. The existence of bi-sulfuryl in the bi(S,S-dioxo-dibenzothiophene) five-membered ring compound is more beneficial for improving the electron affinity of molecules. Alkyl chains are introduced on a five-membered ring, so that the solubility of monomers in an organic solvent can be obviously improved. The plane conjugacy of the compound is better, and is beneficial for the transmission of a current carrier. Higher D-A mutual effect existing in the molecules of the compound endows higher fluorescence of the material. The bi(S,S-dioxo-dibenzothiophene) five-membered ring compound is synthesized and obtained through common organic chemistry reactions such as substitution reactions, Suzuki coupling and ring-closure reactions and oxidation reactions. The compound has good solubility in the organic solvent, and is suitable for solution processing. The compound has wide application prospects in the fields of organic luminescence display, organic photovoltaic cells and organic field-effect tubes.

Silole-containing polymers for high-efficiency polymer solar cells

Song, Jinsheng,Du, Chun,Li, Cuihong,Bo, Zhishan

scheme or table, p. 4267 - 4274 (2012/07/14)

Silole-containing conjugated polymers (P1 and P2) carrying methyl and octyl substituents, respectively, on the silicon atom were synthesized by Suzuki polycondensation. They show strong absorption in the region of 300-700 nm with a band gap of about 1.9 eV. The two silole-containing conjugated polymers were used to fabricate polymer solar cells by blending with PC61BM and PC71BM as the active layer. The best performance of photovoltaic devices based on P1/PC71BM active layer exhibited power conversion efficiency (PCE) of 2.72%, whereas that of the photovoltaic cells fabricated with P2/PC71BM exhibited PCE of 5.08%. 1,8-Diiodooctane was used as an additive to adjust the morphology of the active layer during the device optimization. PCE of devices based on P2/PC71BM was further improved to 6.05% when a TiOx layer was used as a hole-blocking layer.

Synthesis, characterization, and transistor response of semiconducting silole polymers with substantial hole mobility and air stability. Experiment and theory

Lu, Gang,Usta, Hakan,Risko, Chad,Wang, Lian,Facchetti, Antonio,Ratner, Mark A.,Marks, Tobin J.

, p. 7670 - 7685 (2008/12/22)

Realizing p-channel semiconducting polymers with good hole mobility, solution processibility, and air stability is an important step forward in the chemical manipulation of charge transport in polymeric solids and in the development of low-cost printed electronics. We report here the synthesis and full characterization of the dithienosilole- and dibenzosilole-based homopolymers, poly(4,4-di-n-hexyldithienosilole) (TS6) and poly(9,9-di-n- octyldibenzosilole) (BS8), and their mono- and bithiophene copolymers, poly(4,4-di-n-hexyldithienosilole-alt-(bi)thiophene) (TS6T1, TS6T2) and poly(9,9-di-n-octyldibenzosilole-alt-(bi)thiophene) (BS8T1,BS8T2), and examine in detail the consequences of introducing dithienosilole and dibenzosilole cores into a thiophene polymer backbone. We demonstrate air-stable thin-film transistors (TFTs) fabricated under ambient conditions having hole mobilities as large as 0.08 cm2/V·s, low turn-on voltages, and current on/off ratios > 106. Additionally, unencapsulated TFTs fabricated under ambient conditions are air-stable, an important advance over regioregular poly(3-hexylthiophene) (P3HT)-based devices. Density functional theory calculations provide detailed insight into the polymer physicochemical and charge transport characteristics. A direct correlation between the hole injection barrier and both TFT turn-on voltage and TFT polymer hole mobility is identified and discussed, in combination with thin-film morphological characteristics, to explain the observed OTFT performance trends.

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