24304-00-5 Usage
Physical Properties
White crystalline solid, hexagonal; odor of ammonia in moist air; sublimes at 2000°C; melts in N2 atmosphere over 2200°C; decomposes in water, alkalies and acids.
Aluminum Nitride (AlN) is an ideal material for many semiconductor equipment and applications. With high resistance and low porosity, CoorsTek AlN outperforms other materials in process environments such as halogen gases and RF plasma.
Aluminum nitride is a high–thermal conductivity ceramic used as an electronic substrate. Also a key component in the production of sialons.
Uses
Different sources of media describe the Uses of 24304-00-5 differently. You can refer to the following data:
1. Aluminum nitride (AIN) is an important III-V group semiconductor material, which has aroused great attention due to many outstanding features including high thermal conductivity (~320 Wm10^ -1 K^-1), high electrical resistance (>10^10 Ωcm), low dielectric constant (8.6), wide band gap (6.2eV), and low thermal expansion coefficient (4.2x 10-6°C)-1 match to both Si and GaN semiconductors. AIl these properties make AIN an excellent candidate for use in electronic, light, and field- emission devices.
Aluminum nitride advantages
High heat dissipation with thermal conductivity of 170 W/m K
Non-toxic alternative to BeO
Thermal expansion coefficient similar to Si, GaN, and GaAs semiconductors
High dielectric strength.
2. Aluminum nitride possesses very high thermal conductivity and effectively used in the ceramic industry. It finds application in deep ultraviolet optoelectronics, steel production, dielectric layers in optical storage media, chip carriers and as a crucible to grow crystals of gallium arsenide. It is also used as a radio frequency filter, which finds application in mobile phones. Further, it is used as a circuit carrier in semiconductors. In addition to this, it is used as a heat-sink in light-emitting diode lighting technology.
3. Aluminum nitride is a refractory ceramic that is used as an electrically insulating material in applications similar to aluminum oxide. AlN is also used in optical and semiconductor devices with GaN to produce LEDs on sapphire and in piezoelectric MEMS devices.
4. In semiconductor electronics; in steel manufacture. AlN components and substrates are used in electrical engines, microelectronics, naval radio and defense systems, railway transport systems, telecommunications and research satellites, and emission control systems.
Reactions
The nitride reacts with water forming aluminum hydroxide and ammonia.
AlN + 3H2O→ Al(OH)3 + NH3
The compound decomposes in alkalies and acids forming products of complex stoichiometry.
Chemical Properties
Crystalline solid.
Characteristics
Aluminum nitride is an excellent substrate for creating wide-band-gap semiconductors for wireless communications and power-industry applications. Since aluminum nitride withstands very high temperatures, this substrate material can be used for microelectronic devices on jet engines. Such substrates also would improve the production of blue and ultraviolet lasers that could be used to squeeze a full-length movie onto a CD. Aluminum nitride crystals have also been grown in a tungsten crucible at 2300°C.
Preparation
Aluminum nitride is conveniently prepared by an electric arc between aluminum electrodes in a nitrogen atmosphere. Crucibles of the pressed powder, sintered at 1985°C, are resistant to liquid aluminum at 1985°C, to liquid gallium at 1316°C, and to liquid boron oxide at 1093°C. Aluminum nitride has good thermal shock resistance and is only slowly oxidized in air (1.3% converted to Al2O3 in 30 h at 1427°C). It is inert to hydrogen at 1705°C but is attacked by chlorine at 593°C.
Flammability and Explosibility
Nonflammable
Industrial uses
Aluminum nitride is an excellent substrate for creating wide-band-gap semiconductors for wireless communications and power-industry applications. Since aluminum nitride withstands very high temperatures, this substrate material can be used for microelectronic devices on jet engines. Such substrates also would improve the production of blue and ultraviolet lasers that could be used to squeeze a full-length movie onto a CD. Aluminum nitride crystals have also been grown in a tungsten crucible at 2300 C.
Materials Uses
Aluminum nitride (AlN) has an unusual combination of properties: it is an electrical insulator, but an excellent conductor of heat. This is just what is wanted for substrates for high-powered electronics; the substrate must insulate yet conduct the heat out of the microchips. This, and its high strength, chemical stability, and low expansion give it a special role as a heat sinks for power electronics. Aluminum nitride starts as a powder, is pressed (with a polymer binder) to the desired shape, then fired at a high temperature, burning off the binder and causing the powder to sinter.
Aluminum nitride is particularly unusual for its high thermal conductivity combined with a high electrical resistance, low dielectric constant, good corrosion, and thermal shock resistance.
Typical uses. Substrates for microcircuits, chip carriers, heat sinks, electronic components; windows, heaters, chucks, clamp rings, gas distribution plates.
Check Digit Verification of cas no
The CAS Registry Mumber 24304-00-5 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,4,3,0 and 4 respectively; the second part has 2 digits, 0 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 24304-00:
(7*2)+(6*4)+(5*3)+(4*0)+(3*4)+(2*0)+(1*0)=65
65 % 10 = 5
So 24304-00-5 is a valid CAS Registry Number.
InChI:InChI=1/Al.N/q+3;-3
24304-00-5Relevant articles and documents
On the fate of laser-produced NH2 in a constrained pulsed expansion of trimethylamine alane and NH3
Demchuk, Alexander,Cahill, John J.,Simpson, Steven,Koplitz, Brent
, p. 217 - 222 (2001)
The effects of both 193 nm radiation and NH3 on an expansion of trimethylamine alane (TMAA) have been studied. In neat TMAA, 193 nm radiation induces small but significant clustering. When NH3 is introduced in the absence of 193 nm p
Self-propagating high-temperature synthesis of aluminum under lower nitrogen pressures
Shin, Jason,Ahn, Do-Hwan,Shin, Mee-Shik,Kim, Yong-Seog
, p. 1021 - 1028 (2008/10/08)
The synthesis of aluminum nitride (AlN) via self-propagating high-temperature synthesis (SHS) was attempted, using aluminum powder that was mixed with AlN powder as a diluent. The AlN content in the reactant was varied over a range of 30%-70%, and the nitrogen pressure was varied over a range of 0.1-1.0 MPa. The SHS reaction that was performed using a reactant that contained 50% AlN diluent, under a nitrogen-gas pressure of 0.8 MPa, yielded the highest conversion ratio of aluminum powder to AlN powder. A mechanism for the reaction of aluminum with nitrogen gas during the SHS process was discussed, based on observations of the microstructures of the reaction zone and products.
Xi:Irritant;
