252192-82-8

Basic information

• Product Name: 4-fluorobenzoyloxycinnamoyl chloride
• CAS NO: 252192-82-8
• Molecular Weight: 304.705
• Mol File: 252192-82-8.mol

Chemical Properties

• CAS DataBase Reference: 4-fluorobenzoyloxycinnamoyl chloride(CAS DataBase Reference)
• NIST Chemistry Reference: 4-fluorobenzoyloxycinnamoyl chloride(252192-82-8)
• EPA Substance Registry System: 4-fluorobenzoyloxycinnamoyl chloride(252192-82-8)

Safety Data

• Hazardous Substances Data: 252192-82-8(Hazardous Substances Data)

Upstream product

• 7400-08-0 p-Coumaric Acid 
• 403-43-0 4-fluorobenzoyl chloride 
• 252192-78-2 (E)‐3‐(4‐((4‐fluorobenzoyl)oxy)phenyl)acrylic acid 

Relevant articles and documents

Surface-induced alignment of pentacene by photo-alignment technology for organic thin film transistors

A series of highly soluble maleimide-based polymers with photoreactive pendant group were synthesized and used as a gate dielectric insulator for organic thin film transistors. Photoalignment properties were characterized by UV-visible spectroscopy and the alignment of liquid crystals. Photopolymerization of polymer-coated organic thin film transistors with linearly polarized UV light induces anisotropy in field-effect mobility. The gate dielectric insulator based on the photoalignable maleimide shows higher field-effect mobility and on/off current ratio than those from a SiO2 gate dielectric insulator with the values of 0.3 cm2 V-1 s-1 and 104, respectively. Our results demonstrate that the photo-induced anisotropy of alignment films to control the molecular order of semiconducting pentacene is a promising technology for improving the performance of organic thin film transistors. The Royal Society of Chemistry 2005.

Material for photo-alignment layer, photo-alignment layer and method of manufacturing the same

The present invention provides a photo-alignment layer for a liquid crystal display device, which has good liquid crystal display device characteristics such as a good voltage holding ratio and also has good alignment stability and sufficient resistance t