26238-14-2Relevant articles and documents
Cavalleri et al.
, p. 148,149 (1970)
Organic non-fullerene electron acceptor material, preparation method and application thereof
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Paragraph 0045; 0048-0051, (2021/05/12)
The invention relates to the field of organic solar cell materials, in particular to an organic non-fullerene electron acceptor material, a preparation method and application thereof. According to the organic non-fullerene electron acceptor material, strong electron-withdrawing trifluoromethyl groups are introduced to two ends of a non-fullerene acceptor molecule, so that the LUMO energy level of a fused ring electron-rich parent nucleus can be effectively reduced, the electron transmission capability of the acceptor material is improved, and the introduction of trifluoromethyl can also bring closer acceptor molecule accumulation so as to facilitate the improvement of the electron mobility. The organic non-fullerene electron acceptor material provided by the invention has good solubility and film-forming property, strong visible light or near-infrared light absorption performance and high electron mobility, can be used for preparing organic solar cells with high energy conversion efficiency, and is a potential acceptor material.
New donor-acceptor oligoimides for high-performance nonvolatile memory devices
Lee, Wen-Ya,Kurosawa, Tadanori,Lin, Shiang-Tai,Higashihara, Tomoya,Ueda, Mitsuru,Chen, Wen-Chang
experimental part, p. 4487 - 4497 (2012/05/20)
We report the synthesis, optoelectronic properties, and electrical switching memory characteristics of three new donor-acceptor oligoimides consisting of the electron-donating moieties (triphenylamine or carbazole) and electron-withdrawing phthalimide moieties. The influence of different donor (D)-acceptor (A) arrangements, including D-A-D and A-D-A structures, on the electrical properties was explored. Devices based on D-A-D oligoimides revealed a reversible nonvolatile negative-differential-resistance (NDR) characteristic and excellent stability during operation. Without applying voltage stress, the on and off states of the devices showed no obvious degradation for an operation time of 10 s and 108 read pulses. However, the devices prepared from the A-D-A oligoimide showed only the insulating properties. The different memory characteristic was probably because the terminal donor moieties in the D-A-D structure might facilitate the injection and transporting of the holes. Besides, the D-A-D oligoimide with triphenylamine groups exhibited an on/off ratio of 104, 2 orders of magnitude higher than that with carbazole groups. The mechanism related to electrical switching properties was elucidated through molecular simulation. Thus the significance of D-A-D structure on tuning memory characteristics for memory device applications was revealed.