26245-35-2Relevant articles and documents
Reductive elimination of hypersilyl halides from zinc(II) complexes. implications for electropositive metal thin film growth
Sirimanne, Chatu T.,Kerrigan, Marissa M.,Martin, Philip D.,Kanjolia, Ravindra K.,Elliott, Simon D.,Winter, Charles H.
, p. 7 - 9 (2015)
Treatment of Zn(Si(SiMe3)3)2 with ZnX2 (X = Cl, Br, I) in tetrahydrofuran (THF) at 23 °C afforded [Zn(Si(SiMe3)3)X(THF)]2 in 83-99% yield. X-ray crystal structures revealed dimeric structures with Zn2X2 cores. Thermogravimetric analyses of [Zn(Si(SiMe3)3)X(THF)]2 demonstrated a loss of coordinated THF between 50 and 155°C and then single-step weight losses between 200 and 275°C. The nonvolatile residue was zinc metal in all cases. Bulk thermolyses of [Zn(Si(SiMe3)3)X(THF)]2 between 210 and 250°C afforded zinc metal in 97-99% yield, Si(SiMe3)3X in 91-94% yield, and THF in 81-98% yield. Density functional theory calculations confirmed that zinc formation becomes energetically favorable upon THF loss. Similar reactions are likely to be general for M(SiR3)n/MXn pairs and may lead to new metal-film-growth processes for chemical vapor deposition and atomic layer deposition.
