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Trimethylgermyltriphenylsilane is a chemical compound with the formula (C6H5)3SiGe(CH3)3. It is a derivative of silane, where three hydrogen atoms are replaced by phenyl groups, and one hydrogen atom is replaced by a germyl group (Ge(CH3)3). trimethylgermyltriphenylsilane is an organosilicon compound, which means it contains silicon and carbon atoms bonded together. Trimethylgermyltriphenylsilane is a colorless, crystalline solid that is sensitive to air and moisture. It is used in various applications, such as a precursor in the synthesis of other organosilicon compounds and as a reagent in organic synthesis. Due to its sensitivity, it is typically handled under an inert atmosphere or in a vacuum.

27601-58-7

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27601-58-7 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 27601-58-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,7,6,0 and 1 respectively; the second part has 2 digits, 5 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 27601-58:
(7*2)+(6*7)+(5*6)+(4*0)+(3*1)+(2*5)+(1*8)=107
107 % 10 = 7
So 27601-58-7 is a valid CAS Registry Number.

27601-58-7Relevant academic research and scientific papers

Electroreductive Synthesis of Polygermane and Germane-Silane Copolymer

Shono, Tatsuya,Kashimura, Shigenori,Murase, Hiroaki

, p. 896 - 897 (1992)

Formation of Ge-Ge and Ge-Si bonds has been achieved by electroreduction with an Mg electrode and this method has been successfully applied to the preparation of polygermane and germane-silane copolymer.

Concerning the silicon-germanium bond. The structures of isomeric Ph3E-E'Me3, E = Ge, E' = Si and E = Si, E' = Ge.

Pannell, Keith H.,Kapoor, Ramesh N.,Raptis, Raphael,Parkanyi, Laszlo,Fueloep, Vilmos

, p. 41 - 47 (1990)

The synthesis and structure of the unknown trimethylgermyltriphenylsilane (I, Ph3SiGeMe3) is reported.The molecular geometry is compared to that of the isomeric Me3SiGePh3 (II) and the related Ph3SiSiMe3 (III) and (η5-C5H5)Fe(CO)2SiMe2GePh3 (IV).The Si-Ge bond of I is significantly longer than that for II.We suggest that this is due to expansion of Ge bonding orbitals by the relatively electron-donating methyl groups in conjunction with the contraction of the corresponding orbitals of Si due to the electron-withdrawing phenyl groups.The overall result is a better orbital overlap between the Si and Ge atoms for II.

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